advanced power n and p-channel enhancement electronics corp. mode power mosfet bottom exposed dfn n-ch bv dss 20v low on-resistance r ds(on) 35m lower profile i d 4.7a rohs compliant p-ch bv dss -20v r ds(on) 65m i d -3.3a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 20 -20 v v gs gate-source voltage 12 12 v i d @t a =25 continuous drain current 3 4.7 -3.3 a i d @t a =70 continuous drain current 3 3.8 -2.7 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 1.25 w linear derating factor 0.01 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 thermal data symbol value unit rthj-a thermal resistance junction-ambient 3 max. 100 /w data and specifications subject to change without notice parameter 200801062pre-1/7 AP4527GN3 preliminary g2 d2 s2 g1 d1 s1 dfn3*3 g1 s1 g2 s2 d1 d1 d2 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =3.5a - - 35 m v gs =2.5v, i d =2a - - 52 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transconductance v ds =5v, i d =3.5a - 3.5 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =3.5a - 9.5 15 nc q gs gate-source charge v ds =16v - 1.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =10v - 8 - ns t r rise time i d =1a - 10 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 17 - ns t f fall time r d =10 -6- ns c iss input capacitance v gs =0v - 600 960 pf c oss output capacitance v ds =15v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v trr reverse recovery time i s =3.5a, v gs =0v, - 20 - ns qrr reverse recovery charge di/dt=100a/s - 14 - nc 2/7 AP4527GN3
AP4527GN3 p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 -v/ r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-2.5a - - 65 m v gs =-2.5v, i d =-1.5a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 - -1.2 v g fs forward transconductance v ds =-5v, i d =-2.5a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v ,v gs =0v - - -10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =-2.5a - 10.7 17 nc q gs gate-source charge v ds =-16v - 1.8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.7 - nc t d(on) turn-on delay time 2 v ds =-10v - 9 - ns t r rise time i d =-1a - 8 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 32 - ns t f fall time r d =10 -10- ns c iss input capacitance v gs =0v - 740 1180 pf c oss output capacitance v ds =-15v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v trr reverse recovery time i s =-2.5a, v gs =0v, - 28 - ns qrr reverse recovery charge di/dt=100a/s - 19 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted fr4 board, t Q 5s. 3/7
AP4527GN3 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4/7 0 20 40 60 80 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =2.5v 4.0v 5.0v 4.5v 0 10 20 30 40 50 012345678 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.0v v g =2.5v 4.5v 5.0v 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =3.5a 20 40 60 80 100 1357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time circuit fig 12. gate charge circuit 5/7 AP4527GN3 0 2 4 6 8 10 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v i d =3.5a 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 180 /w 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma 0.02
AP4527GN3 65m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6/7 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2.5a v gs = -4.5v 0 10 20 30 40 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) -4.0v t a =25 o c -5.0v -3.0v v g = -2.0v 0 4 8 12 16 20 24 28 32 36 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) v g = -2.0v -4.0v -5.0v -3.0v t a =150 o c 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 40 80 120 160 0123456 -v gs , gate-to-source voltage (v) r ds(on) ( ) i d =-1.5a t a =25 o c
65m fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. switching time circuit fig 12. gate charge circuit 7/7 AP4527GN3 0 2 4 6 8 10 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2.5a v ds = -16v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 s in g le pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 180 /w 0.5 x rated v ds to the oscilloscope -10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope d g s v ds v gs i d i g -1~-3ma 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.02
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