irsm808 - 204mh 1 www.irf.com ? 201 5 international rectifier february 12, 2015 20 a, 25 0v description irsm808 - 204mh is a 20 a, 25 0v half - bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. ir's technology offers an extremely compact, high performance half - bridge topology in an isolated package. this advanced ipm offers a co mbination of ir's low r ds(on) trench mosfet technology and the industry benchmark half - bridge high voltage, rugged driver in a small pqfn package. at only 8x9mm and featuring integrated bootstrap functionality, the compact footprint of this surface - mount p ackage makes it suitable for applications that are space - constrained. irsm808 - 204 mh functions without a heat sink. features ? integrated gate drivers and bootstrap functionality ? suitable for sinusoidal modulation applications ? low 0.15? r ds(on) (max, 25c) trench mosfet ? under - voltage lockout for both channels ? matched propagation delay for all channels ? optimized dv/dt for loss and emi trade offs ? 3.3v input logic compatible ? active high hin and active low lin ? motor power range 80 - 200w ? isolation 1500v rms min ? rohs compliant internal electrical schematic ordering information orderable part number package type form quantity irsm 808 - 204mh pqfn 8 x 9 mm tray 1300 irsm 808 - 204mhtr pqfn 8x9m m tape and reel 2 00 0 half - bridge ipm for small appliance motor drive applications irsm808 - 204mh h a l f b r i d g e d r i v e r w i t h b u i l t i n b o o t s t r a p v + v s v - v b v c c c o m d t l i n h i n i r s m 8 0 8 - 2 0 4 m h
irsm808 - 204mh 2 www.irf.com ? 201 5 international rectifier february 12, 2015 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturing. all voltage parameters are absolute voltages referenced to v ss unless otherwise stated in the table. the thermal resistance rating is measured under board mounted and still air conditions. symbol description min max unit bv dss mosfet blocking voltage --- 25 0 v i o output dc current per mosfet @ t c =25c (note1) --- 20 a p d power dissipation per mosfet @ t c =100c (note1) --- 38 w t j (mosfet & ic) maximum operating junction temperature --- 150 c t l lead temperature (soldering 30 seconds) --- 260 c t s storage temperature range - 40 150 c v b high side floating supply voltage - 0.3 vs + 20 v v s high side floating supply offset voltage vb - 20 vb +0.3 v v cc low side fixed supply voltage - 0.3 20 v v in logic input voltage lin, hin - 0.3 vcc+0.3 v v iso isolation voltage (1min) (note 2 ) --- 1500 v rms note1: calculated based on maximum junction temperature. bond wires current limit is 8a . note2: characterized, not tested at manufacturing reccomended operating conditions symbol description min typ max units conditions v + positive dc bus input voltage --- --- 200 v v s1,2,3 high side floating supply offset voltage (note 3) --- 200 v v b1,2,3 high side floating supply voltage v s +12 --- v s +20 v v cc low side and logic supply voltage 13.5 --- 16.5 v v in logic input voltage com --- v cc v f p pwm carrier frequency --- --- 20 khz for proper operation the module should be used within the recommended conditions. all voltages are absolute referenced to com . the v s offset is tested with all supplies biased at 15v differential. note 3: logic operational for v s from com - 8v to com+ 25 0v. logic state held for v s from com - 8v to com - v bs .
irsm808 - 204mh 3 www.irf.com ? 201 5 international rectifier february 12, 2015 static electrical characteristics v bias (v cc , v bs )=15v, t j =25oc, unless otherwise specified. the v in , and i in parameters are referenced to com symbol description min typ max units conditions bv dss drain - to - source breakdown voltage 250 --- --- v t j =25c, i lk = 250 a i lkh leakage current of high side fets in parallel --- 15 --- a t j =25c, v ds =250v i lkl leakage current of low side fets in parallel plus gate drive ic --- 20 --- a t j =25c, v ds =250v r ds(on) drain to source on resistance --- 0.13 0.15 t j =25c, v cc =10v, id =6a --- 0.35 --- t j =150c, v cc =10v, id =6a (note 4) v sd diode forward voltage --- 0.85 --- v t j =25c, v cc =10v, id=6a v hin/lin logic 1 input voltage for hin & 0 for lin 2.2 --- --- v v hin/lin logic 0 input voltage for hin & 1 for lin --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs supply under - voltage, positive going threshold 8 8.9 9.8 v v ccuv - , v bsuv - v cc and v bs supply under - voltage, negative going threshold 7.4 8.2 9.0 v v ccuvh, v bsuvh v cc and v bs supply under - voltage lock - out hysteresis --- 0.7 --- v i qbs quiescent v bs supply current v in =0v --- 45 70 a i qcc quiescent v cc supply current v in =0v --- 1100 3000 a i hin+ input bias current v in =4v --- 5 20 a i lin - input bias current v in =0v --- 1 2 a r br internal bootstrap equivalent resistor value --- 200 --- t j =25c note 4: characterized, not tested at manufacturing mosfet avalanche characteristics symbol description min typ max units conditions eas single pulse avalanche energy --- 430 --- mj t j =25c, l=3mh, vdd=1 5 0v, ias= 10 a, to - 220 package.
irsm808 - 204mh 4 www.irf.com ? 201 5 international rectifier february 12, 2015 dynamic electrical characteristics v bias (v cc , v bs )=15v, tj=25oc, unless otherwise specified. driver only timing unless otherwise specified. symbol description min typ max units conditions t on input to output propagation turn - on delay time --- 0.8 1.3 s i d =1ma, v + =50v t off input to output propagation turn - off delay time --- 0.8 1.3 s gate driver; v lin =0 & v hin =5v with no external deadtime dt built - in deadtime 0.9 1.3 --- s t fil,in input filter time (hin, lin) --- 300 --- ns thermal and mechanical characteristics symbol description min typ max units conditions r th(j - b) thermal resistance, junction to mounting pad, each mosfet --- 1 .3 --- c/w input - output logic level table hin lin u,v,w hi hi v+ lo lo 0 hi lo ** lo hi * * v+ if motor current is flowing into vs, 0 if current is flowing out of vs into the motor winding ** shoot - through condition g a t e d r i v e r i c v + u / v / w l o h o h i n l i n
irsm808 - 204mh 5 www.irf.com ? 201 5 international rectifier february 12, 2015 qualification information ? qualification level industrial ?? ( per jedec jesd47) moisture sensitivity level msl3 ??? ( per ipc/jedec j - std - 020) esd machine model class b ( per jesd22 - a115) human body model class 1c ( per jesd22 - a114) rohs compliant yes ? qualification standards can be found at international rectifiers web site http://www.irf.com/ ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information. ??? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information. module pin - out description pin name description 1, 4, 7, 32 com low side gate drive return 2 vcc 15v gate drive supply 3 hin logic input for high side (active high) 5 lin logic input for low side (active low) 6 dt dead time 8, 9, 10 v - low side source connection 11 C C C exposed pad (pin 32) has to be connected to com for better electrical performance 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4 2 5 2 6 2 7 2 8 2 9 3 0 3 1 3 2
irsm808 - 204mh 6 www.irf.com ? 201 5 international rectifier february 12, 2015 t ypical application connection irsm808 - 204mh figure 1: typical application connection 1. bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide a good decoupling between vcc - vss and vb - vs terminals, the capacitors shown connected at these terminals should be located very close to the module pins. additional high frequency capacitors , typically 0.1uf, are recommended. 3. value of the boot - strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dt04 - 4 or application note an - 1044. i r s m 8 0 8 - 2 0 4 m h . p o w e r s u p p l y v h u l u h w h w l g a t e k i l l a i n 1 c s _ u + c s _ v + v s s v d d v d d c a p x t a l 0 x t a l 1 a i n 2 s p d - r e f v b u s i r m c k 1 7 1 v l u h v i c h i n l i n v c c c o m v b h o v s l o v h v i c h i n l i n v c c c o m v b h o v s l o w h v i c h i n l i n v c c c o m v b h o v s l o v d d v l v h w h w l
irsm808 - 204mh 7 www.irf.com ? 201 5 international rectifier february 12, 2015 package outline irsm808 - 204mh (bottom view), 1 of 2 dimensions in mm
irsm808 - 204mh 8 www.irf.com ? 201 5 international rectifier february 12, 2015 package outline irsm808 - 204 mh (bottom view), 2 of 2 dimensions in mm
irsm808 - 204mh 9 www.irf.com ? 201 5 international rectifier february 12, 2015 package outline irsm808 - 204 mh (top & side view) dimensions in mm
irsm808 - 204mh 10 www.irf.com ? 201 5 international rectifier february 12, 2015 top marking data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252 - 7105 tac fax: (310) 252 - 7903 visit us at www.irf.com for sales contact information irsm808 - 204 mh
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