cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 1/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification small signal schottky (double) diodes bas70s3/bas70as3 BAS70CS3/bas70ss3 description planar silicon schottky barrier diodes encapsulate d in a sot-323 very small plastic smd package. single diodes and double diodes with different pinning are available. features ? guard ring protected ? low forward voltage drop ? very small plastic smd package ? pb-free package applications ? ultra high-speed switching ? voltage clamping ? protection circuits ? blocking diodes pinning outline description pin bas70 bas70a bas70c bas70s 1 a k1 a1 a1 2 nc k2 a2 k2 3 k a1,a2 k1,k2 k1,a1 2 3 1 n. c. 12 3 1 2 3 3 2 1 sot-323 1 2 3 (1) bas70 (2)bas70a marking: type marking code bas70 s3 k73 bas70as3 k76 (3)bas70c (4)bas70s BAS70CS3 k75 bas70ss3 k74 diode configuration and symbol http://
cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 2/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification absolute maximum ratings symbol parameter conditions min max unit per diode v r continuous reverse voltage - 70 v i f continuous forward current - 70 ma i frm repetitive peak forward current tp 1s, ? 0.5 - 100 ma ptot total power dissi pation (per package) tamb 25 - 200 mw tstg storage temperature -65 +150 tamb operating ambient temperature -55 +125 characteristics (ta=25 c, unless otherwise specified) parameter symbol condition min. max. unit reverse breakdown voltage v br i r =10 a 70 - v v f (1) i f =1ma - 410 mv forward voltage (note 1) v f (2) i f =15ma - 1000 mv reverse leakage current (note 1) i r v r =50v - 100 na diode capacitance c d v r =0v, f=1mhz - 2 pf reverse recovery time trr when switched from i f = 10ma to i r =10ma; r l =100 ; measured at i r =1ma - 5 ns notes : 1.pulse test, tp=300 s, duty cycle<2%. thermal characteristics symbol parameter conditions value unit r th j-a thermal resistance from junc tion to ambient note 1 625 k/w note 1 : r e fer t o sot - 323 stand a rd m ounting co nditions.
cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 3/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification characteristic curves ordering information device package shipping marking sot-323 bas70s3 3000 pcs / tape & reel k73 (pb-free) sot-323 bas70as3 3000 pcs / tape & reel k76 (pb-free) sot-323 BAS70CS3 3000 pcs / tape & reel k75 (pb-free) sot-323 bas70ss3 3000 pcs / tape & reel k74 (pb-free)
cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 4/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 5/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow pb-free assembly profile feature sn-pb eutectic assembly average ramp-up rate 3 c/second max. 3 c/second max. (tsmax to tp) preheat 100 c 150 c ? temperature min(t s min) ? temperature max(t s max) 150 c 200 c ? time(ts min to ts max ) 60-120 seconds 60-180 seconds time maintained above: ? temperature (t l ) 183 c 217 c ? time (t l ) 60-150 seconds 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c248 s3 issued date : 20 12.07.09 revised date : page no. : 6/6 bas70s3/bas70as3/BAS70CS3/bas70ss3 c y s t ek product s pecification sot-323 dimension marking: he e a a1 q lp e1 e bp 12 3 d w b v a z detail z a c 0 12 sc a l e mm l4_ xxx diagram: 3-lead sot-323 plastic surface mou n ted packa g e . cystek package code: s3 ? bas70 s3 : single diod e (marki ng co de k73 ) ? bas70as3 : common anode. (marking cod e k76) ? BAS70CS3 : common cathode. (marking code k75) ? bas70ss3 : series connected. (marking code k74) *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0315 0.0433 0.80 1.10 e1 0.0256 - 0.65 - a1 0.0000 0.0039 0.00 0.10 he 0.0787 0.0886 2.00 2.25 bp 0.0118 0.0157 0.30 0.40 lp 0.0059 0.0177 0.15 0.45 c 0.0039 0.0098 0.10 0.25 q 0.0051 0.0091 0.13 0.23 d 0.0709 0.0866 1.80 2.20 v 0.0079 - 0.2 - e 0.0453 0.0531 1.15 1.35 w 0.0079 - 0.2 - e 0.0512 - 1.3 - - - 10 0 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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