1. product profile 1.1 general description a 600 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 128 mhz band. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 128 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blf174xr; BLF174XRS power ldmos transistor rev. 1 ? 25 june 2013 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 108 50 600 28.5 74 pulsed rf 108 50 600 29 73
blf174xr_BLF174XRS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 25 june 2013 2 of 13 nxp semiconductors blf174xr; BLF174XRS power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator table 2. pinning pin description simplified outline graphic symbol blf174xr (sot1214a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF174XRS (sot1214b) 1drain1 2drain2 3gate1 4gate2 5source [1] 4 3 5 1 2 sym117 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf174xr - flanged ceramic package; 2 mounting holes; 4 leads sot1214a BLF174XRS - earless flanged ceramic package; 4 leads sot1214b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf174xr_BLF174XRS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 25 june 2013 3 of 13 nxp semiconductors blf174xr; BLF174XRS power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.18 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.75ma 110 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 275 ma 1.25 1.7 2.25 v i dss drain leakage current v gs =0v; v ds =50v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -38-a i gss gate leakage current v gs =11v; v ds =0v - - 140 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 9.625 a -0.15- ? table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 2.4 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 210 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 94 - pf table 8. rf characteristics test signal: cw; f = 108 mhz; rf performance at v ds =50v; i dq = 100 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 600 w 27.0 28.5 - db rl in input return loss p l = 600 w - ? 21 ? 13 db ? d drain efficiency p l = 600 w 70 74 - %
blf174xr_BLF174XRS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 25 june 2013 4 of 13 nxp semiconductors blf174xr; BLF174XRS power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the blf174xr and BLF174XRS are capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =100ma; p l = 600 w pulsed; f = 108 mhz. 7.2 impedance information v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section d d d 9 ' 6 9 & r v v s ) fig 2. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 600 w. f z i z l (mhz) (? ) ( ? ) 108 4.66 ? j12.04 6.47 + j1.16 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l
blf174xr_BLF174XRS all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 25 june 2013 5 of 13 nxp semiconductors blf174xr; BLF174XRS power ldmos transistor 7.3 test circuit printed-circuit board (pcb): rf 35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 10 for a list of components. fig 3. component layout for class-ab production test circuit & |