downloaded from elcodis.com electronic components distributor s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) typ 60v 80a 13.5 @ vgs=4.5v 9.5 @ vgs=10v features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 & to-263 package. s t b s e r ie s t o-263(dd-p ak ) g s d s t p s e r ie s t o-220 s d g s g d n-channel logic level enhancement mode field effect transi stor ver2.0 www.samhop.com.tw sep,17,2010 1 details are subject to change without notice. stb/p80l60 green product symbolv ds v gs i dm a i d units parameter 60 vv 20 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t c =25 c w p d c -55 to 175 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 62.5 c/w thermal resistance, junction-to-ambient r ja 1.15 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 420 80 250 130 68 91
downloaded from elcodis.com electronic components distributor stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 2 9.5 57 4300 370235 7274 152 30 57.5 7.2 17.5 12 13.5 16 symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss pf c oss pf c rss pf q g nc t d(on) ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =40a v ds =5v , i d =40a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =35a m ohm c f=1.0mhz c v sd nc q gs nc q gd gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =25a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.79 1.3 v notes nc v ds =30v,i d =25a,v gs =10v v ds =30v,i d =25a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _ 1 2 3 26
downloaded from elcodis.com electronic components distributor f igure 1. output c haracteris tics f igure 2. trans fer c haracteris tics v g s , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain c urrent(a) i d , drain c urrent (a) i d , drain c urrent (a) r ds (on) ( m ) f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage f igure 4. on-r es is tance variation with drain c urrent and temperature on-r es is tance r ds (on) , normalized t j( c ) t j, j unction t emperature ( c ) f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) f igure 5. g ate t hres hold v ariation with t emperature stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 3 35 28 21 14 7 0 0 0.9 5.4 4.5 3.6 2.7 1.8 t j=125 c 25 c -55 c 30 25 20 15 10 5 1 1 12 24 36 48 60 v g s =4.5v v g s =10v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =40a v g s =4.5v i d =35a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 60 48 36 24 12 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 3.5 v v g s = 4v v g s = 10 v v g s = 4.5v v g s = 5v
downloaded from elcodis.com electronic components distributor is , s ource-drain current (a) f igure 8. b ody diode f orward v oltag e v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) 10 1 v g s , g ate- s ource voltage (v ) r ds (on) ( m ) 30 25 20 15 10 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 10 0 i d =40a 5 60 25 c 75 c 125 c 125 c 0 0.25 0.50 0.75 1.00 1.25 25 c f igure 12. maximum s afe o perating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) v g s , g ate to s ource v oltage (v ) f igure 10. g ate c harge q g, t otal g ate c harge (nc ) 10 86 4 2 0 24 32 40 48 56 64 v ds =30v i d =25a f igure 9. c apacitance v ds , drain-to s ource voltage (v ) c , c apacitance (pf ) 10 15 20 25 30 6000 5000 4000 3000 2000 1000 0 c i s s c o s s c r s s f igure 11.s witching characteris tics r g, g ate r es is tance ( w ) s witching t ime (ns ) 16 8 0 stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 4 2 4 6 8 75 c 0 5 1 10 100 1 10 100 1000 vds=30v,id=1a vgs=10v td(on) t r td(off ) tf 10 1 0.1 1000 100 v gs =10v single pulse t a =25 c 0.1 1 10 v gs =10v single pulse t a =25 c 1m s dc 10 0u s 1 0 ms r ds (o n ) l im it
downloaded from elcodis.com electronic components distributor t p v ( br )d ss i a s f igure 13a. f igure 13b. u nc l am p ed s i n d u ct i v e t e t ci r c u i t o f r m w a ve s u nc l am p ed i n d u ct i v e 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 t rans ient t hermal impedance s quare wave p uls e duration (ms ec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 5 r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v
downloaded from elcodis.com electronic components distributor stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 6
downloaded from elcodis.com electronic components distributor stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 7
downloaded from elcodis.com electronic components distributor to-220/263ab tube stb/p80l60 ver2.0 www.samhop.com.tw sep,17,2010 8
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