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2N06V 1H101 STK5422 DS1250W 2BG2Z41 SFR9034 C1206 ECCM1
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  EMA3 / uma3n / fma3a tr ansistors emitter common (dual digital transistors) EMA3 / uma3n / fma3a ! ! ! ! features 1) two dta143ts in a emt or umt or smt package. 2) mounting cost and area can be cut in half. ! ! ! ! structure epitaxial planar type pnp silicon transistor (built-in resistor type.) the following characteristics apply to both dtr 1 and dtr 2 . ! ! ! ! equivalent circuit EMA3 / uma3n r 1 =4.7k ? fma3a r 1 dtr 1 dtr 2 r 1 (3) (2) (1) (4) (5)/(6) r 1 =4.7k ? r 1 r 1 dtr 1 dtr 2 (3) (4) (5) (2) (1) ! ! ! ! external dimensions (units : mm) rohm : emt5 EMA3 each lead has same dimensions rohm : umt5 eiaj : sc-88a uma3n each lead has same dimensions 0.9 0.15 0to0.1 0.1min. 0.7 2.1 1.3 0.65 ( 4 ) ( 1 ) (6) 0.2 1.25 ( 2 ) 0.65 ( 3 ) 2.0 abbreviated symbol : a3 abbreviated symbol : a3 abbreviated symbol : a3 each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 ( 4 ) ( 5 ) ( 1 ) 0.3 ( 3 ) 0.95 ( 2 ) rohm : smt5 eiaj : sc-74a fma3a 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6
EMA3 / uma3n / fma3a tr ansistors ! ! ! ! absolute maximum ratings (ta = 25 c) parameter v cbo v ceo v ebo i c p c tj tstg ? 50 v v v ma ? 2 mw ? 1 ?c ?c ? 50 ? 5 ? 100 300 (total) 150 (total) 150 ? 55 + 150 symbol limits unit EMA3, uma3n fma3a collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. ! ! ! ! electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo h fe v ce (sat) r 1 min. ? 50 ? 50 ? 5 ? 100 ? 3.29 ? ? ? ? 250 ? 4.7 ? ? ? ? 0.5 600 ? 0.3 6.11 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v ce /i c = ? 5v/ ? 1ma i c /i b = ? 5ma/ ? 0.25ma ? v v a i ebo ??? 0.5 v eb = ? 4v a ? v k ? typ. max. unit conditions f t ? 250 ? v ce = ? 10ma, i e = 5ma, f = 100mhz mhz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance emitter cutoff current transition frequency ? transition frequency of the device ! ! ! ! packaging specifications package code tr t148 3000 3000 taping basic ordering unit (pieces) uma3n t2r 8000 EMA3 fma3a type ! ! ! ! electrical characteristic curves v ce = ? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) fig.1 dc current gain vs. collector current ? 40 ? c 25 ? c ta=100 ? c l c /l b =20 ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m collector saturation voltage : v ce (sat) (v) collector current : i c (a) fig.2 collector-emitter saturation voltage vs. collector current ta=100 ? c 25 ? c ? 40 ? c


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