SSF18NS60 ? silikron semiconductor co.,ltd. 20 1 2 . 2 . 10 version : 1. 1 page 1 of 8 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 15 a i d @ tc = 100c continuous drain current, v gs @ 10v 9.4 i dm pulsed drain current 60 p d @tc = 25c power dissipation 156 w linear derating factor 1.25 w/c v ds drain - source voltage 610 v v gs gate - to - source voltage 30 v e as single pulse avalanche energy @ l= 22.5 m h 180 mj i a s avalanche current @ l= 22.5 mh 4 a t j t stg operating junction and storage temperature range - 55 to + 1 50 c v dss 610 v r ds (on) 0.27 (typ . ) i d 15 a to220 marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance the ss f 18 ns60 series mosfets is a new technology. which combines an innovative super junction technology and advance process. t his new technology achi eves low rdson, energy saving, high reliability and uniformity, superior power density and space saving.
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 2 of 8 www.silikron.com thermal resistance symbol characterizes typ. max. units r jc junction - to - case 0.8 /w r j a junction - to - ambient ( t 10s ) 62 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 610 v v gs = 0v, i d = 250 a r ds(on) static drain - to - source on - resistance 0.27 0. 35 v gs =10v , i d = 9.4 a 0.73 t j = 1 25 v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250a 2.66 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 6 00 v,v gs = 0v 50 t j = 125 c i gss gate - to - source forward leakage 1 00 na v gs = 3 0 v - 1 00 v gs = - 3 0 v q g total gate charge 27.0 nc i d = 10 a , v ds = 480 v , v gs = 10v q gs gate - to - source charge 6. 3 q gd gate - to - drain("miller") charge 13.7 t d(on) turn - on delay time 12.3 n s v gs =10v, v ds = 480 v, r l = 40 , r gen = 4. 1 i d = 12 a t r rise time 24.3 t d(off) turn - off delay time 27.1 t f fall time 19.7 c iss input capacitance 949 pf v gs = 0v v ds = 25 v ? = 400k hz c oss output capacitance 78 3 c rss reverse transfer capacitance 11 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 15 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 60 a v sd diode forward voltage 0.89 1 .3 v i s = 15 a, v gs =0v t rr reverse recovery time 313 n s t j = 25c , i f = 15 a, di/dt = 10 0a/s q rr reverse recovery charge 3 c
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 3 of 8 www.silikron.com test circuits and waveforms switch waveforms: n otes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a . repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) = 1 5 0 c.
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics figure 2. gate to source cut - off voltage figure 1: typical output characteristics fig ure 3. drain - to - source breakdown voltage vs. temperature figure 4: normalized on - resistance vs. case temperature
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 5 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 5 . maximum drain current vs. case temperature case temperature fig ure 6 .typical capacitance vs. drain - to - source voltage
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ?1 - 7 0 - - 7 0 - ?2 - 7 0 - - 7 0 - ?3 - 3 0 - 5 0 7 0 9 0 ?4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? 3 l ? 4 p1 e1
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 18 ns60 package (available) to 220 operating temperature range c : - 55 to 1 50 oc devices per unit package type units/ tube tubes/inner box units/inner box innerboxes/ cartonbox units/carton box to 220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 t o 1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 18ns60 ? silikron semiconductor co.,ltd . 20 1 2 . 2 . 10 version : 1. 1 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operatin g condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms an d states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause da mage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant desig n, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and rec ording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guarant eed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all inform ation described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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