ssf20ns60f 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 20 i d @ tc = 100c continuous drain current, v gs @ 10v 13 i dm pulsed drain current 80 a power dissipation 34.7 w p d @tc = 25c linear derating factor 0.27 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=13.8mh 248 mj i ar avalanche current @ l=13.8mh 6 a t j t stg operating junction and storage temperature range -55 to + 150 c v dss 600v r ds (on) 170m(typ.) i d 20a to220f marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf20ns60f series mosfet is a new technology, which combines an innovative super junction technology and advance process.this new technology achieves low r ds (on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf20ns60f 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 3.6 /w r ja junction-to-ambient (t 10s) 80 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 170 190 v gs =10v,i d = 13a r ds(on) static drain-to-source on-resistance 475 m t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.40 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 50.58 q gs gate-to-source charge 11.71 q gd gate-to-drain("miller") charge 21.63 nc i d = 20a, v ds =480v, v gs = 10v t d(on) turn-on delay time 15.42 t r rise time 44.80 t d(off) turn-off delay time 30.92 t f fall time 40.36 ns v gs =10v, vds=380v, r l =18, r gen =3.38 id=18a c iss input capacitance 1514 c oss output capacitance 57.44 c rss reverse transfer capacitance 8.43 pf v gs = 0v v ds = 25v ? = 500khz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 20 a i sm pulsed source current (body diode) 80 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.87 1.3 v i s =20a, v gs =0v t rr reverse recovery time 370 ns q rr reverse recovery charge 5 uc t j = 25c, i f =20a, di/dt = 100a/s
ssf20ns60f 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.2 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c.
ssf20ns60f 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.2 typical electrical and thermal characteristics figure 2. typ. gate to source cut-off voltage figure 1: power dissipation figure 3. typ. gate charge figure 4: typ. capacitances
ssf20ns60f 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.2 figure 5. drain-source breakdown voltage typical electrical and thermal characteristics figure 6. drain-source on-state resistance
ssf20ns60f 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.2 mechanical data min nom max min nom max a 9.960 10.160 10.360 0.392 0.400 0.408 a1 0.276 0.000 0.000 a2 3.080 3.180 3.280 0.121 0.125 0.129 a3 9.260 9.460 9.660 0.365 0.372 0.380 b1 15.670 15.870 16.070 0.617 0.625 0.633 b2 4.500 4.700 4.900 0.177 0.185 0.193 b3 6.480 6.680 6.880 0.255 0.263 0.271 c 3.200 3.300 3.400 0.126 0.130 0.134 c1 15.600 15.800 16.000 0.614 0.622 0.630 c2 9.550 9.750 9.950 0.376 0.384 0.392 d d1 - - 1.470 - - 0.058 d2 0.700 0.800 0.900 0.028 0.031 0.035 d 3 0.250 0.350 0.450 0.010 0.014 0.018 e 2.340 2.540 2.740 0.092 0.100 0.108 e1 e2 e3 0.450 0.500 0.600 0.018 0.020 0.024 e4 2.560 2.760 2.960 0.101 0.109 0.117 ? symbol dimension in millimeters dimension in inches 7.000 2.54 (typ) 0.700 1.0*45 0 30 0 1.00 (typ) 0.028 1.0*45 0 30 0 to220f package outline dimension
ssf20ns60f 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.2 ordering and marking information device marking: ssf20ns60f package (available) to220f operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
