ssf4ns60d 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 4 i d @ tc = 100c continuous drain current, v gs @ 10v 2.5 i dm pulsed drain current 12 a power dissipation 50 w p d @tc = 25c linear derating factor 0.4 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=22.4mh 54 mj i ar avalanche current @ l=22.4mh 2.2 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 600v r ds (on) 1.1 (typ.) i d 4a to-252 marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf4ns60d series mosfets is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low r ds(on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf4ns60d 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 2.5 /w r ja junction-to-ambient (t 10s) 75 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, i d = 250a 1.1 1.2 v gs =10v,i d = 2.8a r ds(on) static drain-to-source on-resistance 2.8 t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.7 v t j = 125c 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 8.3 q gs gate-to-source charge 2.3 q gd gate-to-drain("miller") charge 2.6 nc i d = 4a, v ds =100v, v gs = 10v t d(on) turn-on delay time 9.8 t r rise time 17.6 t d(off) turn-off delay time 19.0 t f fall time 15.3 ns v gs =10v, v ds =380v, r gen =18,i d =4a c iss input capacitance 268 c oss output capacitance 222 c rss reverse transfer capacitance 4.62 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 4 a i sm pulsed source current (body diode) 12 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.88 1.2 v i s =2.8a, v gs =0v t rr reverse recovery time 180 ns q rr reverse recovery charge 1304 nc t j = 25c, i f = i s , di/dt = 100a/s
ssf4ns60d 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
ssf4ns60d 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
ssf4ns60d 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance junction-to-case
ssf4ns60d 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) to-252 package outline dimension
ssf4ns60d 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: ssf4ns60d package (available) to-252(dpak) operating temperature range c : -55 to 150 oc devices per unit option1 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 2 5000 7 35000 option2 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 1 2500 10 25000 package type units/tape package type units/tape reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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