DMP1045U document number: ds35051 rev. 4 - 2 1 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = +25c -12v 31m ? @ v gs = -4.5v 5.2a 45m ? @ v gs =-2.5v 4.3a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? analog switch features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0072 grams (approximate) ordering information (note 4) part number case packaging DMP1045U-7 sot-23 3,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2010 2011 2012 2013 2014 2015 code x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected to 3kv top view internal schematic pin configuration d g s sot23 source gate drain gate protection diode 15p = marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) 15p ym chengdu a/t site shanghai a/t site e3 15p ym ym y
DMP1045U document number: ds35051 rev. 4 - 2 2 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -12 v gate-source voltage v gss 8 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25c t a = +70c i d 4.0 3.1 a continuous drain current (note 5) v gs = -2.5v steady state t a = +25c t a = +70c i d 3.3 2.6 a continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d 5.2 4.2 a continuous drain current (note 6) v gs = -2.5v steady state t a = +25c t a = +70c i d 4.3 3.4 a maximum continuous body diode forward current (note 6) i s 2 a pulsed drain current (10s pulse, duty cycle=1%) (note 5) i dm 40 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units total power dissipation (note 5) p d 0.8 w thermal resistance, junction to ambient (note 5) r ? ja 168 c/w total power dissipation (note 6) p d 1.3 w thermal resistance, junction to ambient (note 6) r ? ja 99 c/w thermal resistance, junction to case (note 6) r ? jc 14.8 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -12 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current t j = +25c i dss ? ? -1.0 a v ds = -12v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = ? 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) -0.3 -0.55 -1.0 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 26 31 m ? v gs = -4.5v, i d = -4.0a 31 45 v gs = -2.5v, i d = -3.5a 45 75 v gs = -1.8v, i d = -2.7a forward transfer admittance |y fs | ? 12 ? s v ds = -5v, i d = -4a diode forward voltage v sd ? -0.6 ? v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss ? 1357 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 504 ? pf reverse transfer capacitance c rss ? 235 ? pf gate resistnace r g ? 14.1 ? ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics (note 8) total gate charge q g ? 15.8 ? nc v gs = -4.5v, v ds = -10v, i d = -4a gate-source charge q gs ? 2.0 ? nc gate-drain charge q gd ? 3.9 ? nc turn-on delay time t d(on) ? 15.7 ? ns v ds = -10v, v gs = -4.5v, r l = 2.5 ? , r g = 3.0 ? turn-on rise time t r ? 23.3 ? ns turn-off delay time t d(off) ? 91.2 ? ns turn-off fall time t f ? 106.9 ? ns notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMP1045U document number: ds35051 rev. 4 - 2 3 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i, d r ai n c u r r e n t (a) d 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v = 5.0v ds i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance( ) ds(on) ? 048121620 0 0.02 0.04 0.06 0.08 v=2.5v gs v =4.5v gs v=8.0v gs i , drain current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) ? 048121620 0 0.01 0.02 0.03 0.04 0.0 5 t =150c a t =125c a t=85c a t=25c a t =-55c a v = 4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , drain-source on-resistance ( ) ds(on) ? 0 0.01 0.02 0.03 0.04 0.0 5
DMP1045U document number: ds35051 rev. 4 - 2 4 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product -50-25 0255075100125150 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j ? 0 0.2 0.4 0.6 0.8 1 1.2 i = 250a d i= 1ma d i , source current (a) s v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t= 25c a ? v , drain-source voltage (v) fig. 9 typical drain-source leakage current vs. voltage ds i , leaka g e c u r r en t (na) dss 100000 048 121620 t = a 25 c ? t = a 85 c ? t = 150c a ? 10000 1000 100 10 1 0.1 f = 1mhz -v , drain-source voltage (v) fig. 10 typical junction capacitance ds c , j u n c t i o n c a p a c i t an c e (p f ) t cave (pf) rss 10 100 1000 cave (pf) iss cave (pf) oss 024681012 q -(nc) fig. 11 gate charge characteristics g v(v) gs 0 2 4 6 8 0481216202428 v =-10v, i =-4a ds d
DMP1045U document number: ds35051 rev. 4 - 2 5 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 12 transient thermal resistance r(t), transient thermal resistance r (t)=r(t) * r r =164c/w duty cycle, d=t1/ t2 ?? ? ja ja ja package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 ?? 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
DMP1045U document number: ds35051 rev. 4 - 2 6 of 6 www.diodes.com october 2013 ? diodes incorporated DMP1045U new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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