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| this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. november 2013 docid025573 rev 1 1/12 STWA20N95K5 n-channel 950 v, 0.275 ? , 17.5 a supermesh? 5 power mosfet in to-247 long leads package datasheet - preliminary data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 1 2 3 to-247 long leads d(2) g(1) s(3) am01476v1 order codes v dss r ds(on) max i d p w STWA20N95K5 950 v 0.330 17.5 a 250 w table 1. device summary order codes marking package packaging STWA20N95K5 20n95k5 to-247 long leads tube www.st.com
contents STWA20N95K5 2/12 docid025573 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 docid025573 rev 1 3/12 STWA20N95K5 electrical ratings 12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 17.5 a i d drain current (continuous) at t c = 100 c 11 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 70 a p tot total dissipation at t c = 25 c 250 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 200 mj e sd gate-source human body model (r= 1,5 k , c = 100 pf) 2kv dv/dt (2) 2. i sd 17.5 a, di/dt 100 a/ s, v peak v (br)dss peak diode recovery voltage slope 6 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-amb max 50 c/w electrical characteristics STWA20N95K5 4/12 docid025573 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950 v, v ds = 950 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9 a 0.275 0.330 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1500 - pf c oss output capacitance - 80 - pf c rss reverse transfer capacitance -5-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v - 170 - pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -65-pf r g intrinsic gate resistance f = 1mhz open drain - 3.5 - q g total gate charge v dd = 760 v, i d = 9 a v gs =10 v (see figure 15 ) -40-nc q gs gate-source charge - 8 - nc q gd gate-drain charge - 25 - nc docid025573 rev 1 5/12 STWA20N95K5 electrical characteristics 12 the built-in-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 475 v, i d = 9 a, r g =4.7 , v gs =10 v (see figure 17 ) -17-ns t r rise time - 12 - ns t d(off) turn-off delay time - 70 - ns t f fall time - 20 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 17.5 a i sdm source-drain current (pulsed) - 70 a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17.5 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 17.5 a, v dd = 60 v di/dt = 100 a/ s, (see figure 16 ) - 530 ns q rr reverse recovery charge - 12 c i rrm reverse recovery current - 44 a t rr reverse recovery time i sd = 17.5 a,v dd = 60 v di/dt=100 a/ s, tj=150 c (see figure 16 ) - 650 ns q rr reverse recovery charge - 14 c i rrm reverse recovery current - 77 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 30 - - v electrical characteristics STWA20N95K5 6/12 docid025573 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 100 am11184v1 i d 15 10 5 0 0 10 v ds (v) 20 (a) 5 15 25 20 25 5v 6v 7v v gs =10v 30 8v am11185v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 20 25 v ds =15v 10 30 35 40 am11186v1 v gs 6 4 2 0 0 q g (nc) (v) 30 8 10 20 10 v dd =760v i d =9a 40 12 600 400 200 0 800 v ds q g v ds ( v) am11187v1 r ds(on) 0.29 0.28 0.27 0.26 0 6 i d (a) ( ) 2 10 v gs =10v 14 18 am11188v1 docid025573 rev 1 7/12 STWA20N95K5 electrical characteristics 12 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. maximum avalanche energy vs starting tj figure 13. normalized b vdss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am11189v1 e oss 1.5 1.0 0.5 0 0 100 v ds (v) (j) 400 2.0 200 300 2.5 3.0 500 3.5 4.0 4.5 am11190v1 v gs(th) 0.6 0.5 0.4 0.3 t j (c) (norm) -25 0.7 75 25 125 0.9 0.8 1.0 1.2 1.1 am11192v1 r ds(on) 2.0 1.5 1.0 0.5 t j (c) (norm) -25 75 25 125 2.5 0 am11193v1 e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 160 180 200 i d =6 a v dd =50 v am11194v1 bv dss t j (c) (norm) -25 75 25 125 0.90 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 1.10 am11191v1 test circuits STWA20N95K5 8/12 docid025573 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs docid025573 rev 1 9/12 STWA20N95K5 package mechanical data 12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.90 5.15 d1.85 2.10 e0.55 0.67 f1.07 1.32 f1 1.90 2.38 f2 2.87 3.38 g 10.90 bsc h 15.77 16.02 l 20.82 21.07 l1 4.16 4.47 l2 5.49 5.74 l3 20.05 20.30 l4 3.68 3.93 l5 6.04 6.29 m2.25 2.55 v 10 v1 3 v3 20 dia. 3.55 3.66 package mechanical data STWA20N95K5 10/12 docid025573 rev 1 figure 20. to-247 long leads drawing 7395426_g docid025573 rev 1 11/12 STWA20N95K5 revision history 12 5 revision history table 10. document revision history date revision changes 21-nov-2013 1 first release. STWA20N95K5 12/12 docid025573 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com |
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