sot - 223 plastic - encapsulate transistors pzt a06 transistor ( npn ) features ? low voltage and high current ? general purpose amplifier application s maximum ratings (t a =25 unless otherwise noted) electrical characteristics ( t a =25 unless otherwise specified ) p arameter symbol test conditions min typ max unit collector - base breakdo wn voltage v (br) cbo i c = 0.1m a ,i e =0 80 v c ollector - emitter breakdown voltage v (br) ceo * i c = 1 ma , i b =0 8 0 v emitter - base breakdown voltage v (br) e b o i e = 0. 1m a ,i c =0 4 v collector cut - off current i c b o v cb = 80 v,i e =0 100 n a collector cut - off current i c e o v c e = 60 v,i b =0 100 n a emitter cut - off current i ebo v eb = 3 v, i c =0 100 n a h fe (1) v ce =1 v , i c = 10 m a 100 dc current gain h fe (2) v ce =1 v , i c = 100 m a 100 collector - emitter saturation voltage v ce(sat) i c =1 0 0m a ,i b = 1 0 m a 0.25 v base - emitter voltage v b e v ce = 1 v , i c =100m a 1.2 v transition frequency f t v ce = 2 v,i c = 10 m a , f=1 00m hz 100 mhz * p ulse test: p ulse w idth 3 0 0 s, d uty c ycle 2.0%. symbol parameter value unit v cbo collector - b ase v oltage 80 v v ceo collector - e mitter v oltage 80 v v ebo emitter - b ase v oltage 4 v i c collector c urrent 500 m a p c collector p ower d issipation 1 w r ja thermal resistance from junc tion to ambient 125 / w t j junction t emperature 150 t stg s torage t emperature - 55~+150 sot - 223 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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