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march 2010 doc id 14509 rev 2 1/12 12 STS5DNF60L n-channel 60 v, 0.035 ? , 5 a so-8 stripfet? ii power mosfet features standard outline for easy automated surface mount assembly low threshold drive applications switching applications ? automotive description this power mosfet is th e latest development of stmicroelectronics unique ?single feature size? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment st eps allowing remarkable manufacturing reproducibility. figure 1. internal schematic diagram type v dss r ds(on) max i d STS5DNF60L 60 v <0.045 ? 5 a so-8 table 1. device summary order code marking package packaging STS5DNF60L s5dnf60l so-8 tape and reel www.st.com
contents STS5DNF60L 2/12 doc id 14509 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 STS5DNF60L electrical ratings doc id 14509 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate- source voltage 15 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot (2) 2. p tot = 1.6 w for single operation total dissipation at t c = 25 c 2 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data simbol parameter value unit r thj-pcb thermal resistance junction-pcb d.o. (1) 1. when mounted on inch2 fr-4 board, 2 oz cu, t 10 sec, dual operation 62.5 c/w electrical characteristics STS5DNF60L 4/12 doc id 14509 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2 a v gs = 4.5 v, i d = 2 a 0.035 0.045 0.045 0.055 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds =25 v, i d =2 a - 25 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1030 140 40 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v, i d = 4 a, v gs = 4.5 v (see figure 13 ) - 15 4 4 - nc nc nc table 6. switching times symbol parameter test condi tions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v, i d = 2.2 a, r g = 4.7 ?, v gs = 10 v (see figure 12 ) - 15 28 - ns ns t d(off) t f turn-off delay time fall time v dd = 30 v, i d = 2.2 a, r g = 4.7 ?, v gs = 10 v (see figure 12 ) - 45 10 - ns ns STS5DNF60L electrical characteristics doc id 14509 rev 2 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 5 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 4 a, v gs = 0 - 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a, di/dt = 100 a/s v dd = 20 v (see figure 17 ) - 85 85 2 ns nc a electrical characteristics STS5DNF60L 6/12 doc id 14509 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characterisics figure 5. transfer characteristics figure 6. source-drain diode forward characteristics figure 7. static drain-source on resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v t p s + 3 i n g l e p u l s e 2 t h j p c b ? # 7 : t h j p c b + |