1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a medium power transistor (60v, 2a) 2sd2391 ? features 1) low saturation voltage , typically v ce (sat) =0.13v at i c / i b =1a /50ma. 2) collector-emitter voltage =60v 3) pc = 2w (on 40 ? 40? 0.7mm ceramic board). 4) complements the 2sb1561. ? dimensions (unit : mm) mpt3 (1)base (2)collector (3)emitter 1.5 0.4 1.6 0.5 3.0 0.4 0.4 1.51.5 (3) (2) (1) 4.5 0.5 4.0 2.5 1.0 ? absolute maximum ratings (ta=25 ?c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 60 60 6 2 0.5 2 150 ?55 to +150 unit v v v a 6 a ? 1 w c c ?1 single pulse, pw=10ms c ollector-base voltage c ollector-emitter voltage e mitter-base voltage c ollector current c ollector power dissipation j unction temperature s torage temperature ? 2 ?2 when mounted on a 40 40 0.7mm ceramic board. + + ? electrical characteristics (ta=25 ?c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe1 f t cob 60 60 6 ? ? ? ? ? ? ? ? ? ? 0.13 210 21 ? ? ? 0.1 0.1 0.35 ? ? v v v a a v mhz pf i c =50a i c =1ma i e =50a v cb =50v v eb =5v i c /i b =1a/50ma ? 270 v ce /i c =?2v/?0.5a v ce =2v, i e =?0.5a, f=100mhz v cb =10v, i e =0a, f=1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance 120 ? h fe2 ? ? v ce /i c =?2v/?1.5a 45 ? ? ? ? measured using pulse current ? packaging specifications and h fe type 2sd2391 mpt3 q t100 1000 package h fe code b asic ordering unit (pieces) marking dt ? ? denotes h fe
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet 2sd2391 ? electrical characteristic curves fig.1 grounded emitter output characteristics 04 5 23 1 collector to emitter voltage : v ce (v ) 2.0 0.0 0.4 0.8 1.2 1.6 collector current : l c (a) ta=25 c 20ma 16ma 18ma i b =0ma 2ma 4ma 6ma 8ma 10ma 12ma 14ma fig.2 grounded emitter propagatio n characteristics 0.40.2 0.80.6 1.2 1.4 1.0 1.6 0 collector current : i c (a) base to emitter voltage : v be (v) 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m v ce =2v ta=100c 25c ?40c fig.3 dc current gain vs. collector current ( ) 10m 20m 50m 100m 200m 500m 12 51 0 1 2 5 10 20 50 100 200 1000 500 collector current : i c (a) dc current gain : h fe ta=100 c ?40 c 25 c v ce =2v fig.4 dc current gain vs. collector current ( ? ) 10m 20m 50m 100m 200m 500m 1 0 5 12 1 2 5 10 20 50 100 200 1000 500 collector current : i c (a) dc current gain : h fe v ce =5v 2v 1v ta=25 c fig.5 collector-emitter saturation voltage vs. collector current ( ) 5m 10m 20m 50m 100m 200m 500m 5 12 1 2 5 10 20 50 100 200 1000 500 collector current : i c (a) collector saturation voltage : v ce(sat) (mv) i c /i b =20 ta=100c 25c ?40c fig.6 collector-emitter saturation voltage vs. collector current ( ? ) 5m 10m 20m 50m 100m 200m 500m 5 12 1 2 5 10 20 50 100 200 1000 500 collector current : i c (a) collector saturation voltage : v ce(sat) (mv) ta=25c i c /i b =50 20 10 fig.7 gain bandwidth product vs. emitter current ?2m ?10m ?100m ?1 ? 2 1 2 5 10 20 50 100 200 1000 500 emitter current : i e (a) transition frequency : f t (mhz) ta=25c v ce =2v fig.8 iutput capacitance vs. voltage 0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 1000 500 collector to base voltage : v cb ( v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) ta=25c f=1mhz i e =0a i c =0a cib cob fig.9 safe operating area 0.2 1 0.5 2 5 10 20 50 100 200 500 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 collector to emitter voltage : v ce ( v) collector current : l c (a) dc ta=25c single pulse p w =1ms p w =100ms pw=10ms ic max(pulse)
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