1. product profile 1.1 general description npn silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin sot223 package. the BFU580G is part of the bfu5 family of tr ansistors, suitable for small signal to medium power applications up to 2 ghz. 1.2 features and benefits ? low noise, high linearity, high breakdown rf transistor ? aec-q101 qualified ? minimum noise figure (nf min ) = 0.75 db at 900 mhz ? maximum stable gain 15.5 db at 900 mhz ? 11 ghz f t silicon technology 1.3 applications ? applications requiring high supply voltages and high breakdown voltages ? broadband amplifiers up to 2 ghz ? low noise, high linearity am plifiers for ism applications ? automotive applications (e.g., antenna amplifiers) 1.4 quick reference data BFU580G npn wideband silicon rf transistor rev. 1 ? 28 april 2014 product data sheet 6 2 7 table 1. quick reference data t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - 30 60 ma p tot total power dissipation t sp ? 120 ?c [1] - - 1000 mw h fe dc current gain i c =30ma; v ce =8v 60 95 130 c c collector capacitance v cb =8v; f=1mhz - 1.1 - pf f t transition frequency i c =30ma; v ce = 8 v; f = 900 mhz - 11 - ghz
BFU580G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 2 of 21 nxp semiconductors BFU580G npn wideband silicon rf transistor [1] t sp is the temperature at the solder point of the collector lead. [2] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. 2. pinning information 3. ordering information [1] the customer evaluation ki t contains the following: a) unpopulated rf amplifier printed-circuit board (pcb) b) unpopulated rf amplifier printed-circ uit board (pcb) with emitter degeneration c) four sma connectors for fitting unpopu lated printed-circuit board (pcb) d) BFU580G and bfu590g samples e) usb stick with data sheets, application notes, models, s-parameter and noise files 4. marking g p(max) maximum power gain i c =30ma; v ce = 8 v; f = 900 mhz [2] - 15.5 - db nf min minimum noise figure i c =5ma; v ce = 8 v; f = 900 mhz; ? s = ? opt -0.75- db p l(1db) output power at 1 db gain compression i c =30ma; v ce =8v; z s =z l =50 ? ; f=900mhz -13- dbm table 1. quick reference data ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit table 2. discrete pinning pin description simplified outline graphic symbol 1emitter 2base 3emitter 4 collector p e e table 3. ordering information type number package name description version BFU580G - plastic surface-mounted package with increased heatsink; 4 leads sot223 om7966 - customer evaluation kit for BFU580G and bfu590g [1] - table 4. marking type number marking BFU580G bfu580
BFU580G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 3 of 21 nxp semiconductors BFU580G npn wideband silicon rf transistor 5. design support 6. limiting values 7. recommended operating conditions [1] t sp is the temperature at the solder point of the collector lead. table 5. available design support download from the BFU580G product information page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads yes based on mextram device model. spice model yes based on gummel-poon device model. s-parameters yes noise parameters yes customer evaluation kit yes see section 3 and section 10 . solder pattern yes application notes yes see section 10.1 table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 30 v v ce collector-emitter voltage open base - 16 v shorted base - 30 v v eb emitter-base voltage open collector - 3 v i c collector current -100ma t stg storage temperature ? 65 +150 ?c v esd electrostatic discharge voltage human body model (hbm) according to jedec standard 22-a114e - ? 150 v charged device model (cdm) according to jedec standard 22-c101b - ? 2kv table 7. characteristics symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - - 60 ma p i input power z s = 50 ? --10dbm t j junction temperature ? 40 - +150 ?c p tot total power dissipation t sp ? 120 ?c [1] --1000mw
BFU580G all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 1 ? 28 april 2014 4 of 21 nxp semiconductors BFU580G npn wideband silicon rf transistor 8. thermal characteristics [1] t sp is the temperature at the solder point of the collector lead. t sp has the following relation to the ambient temperature t amb : t sp =t amb +p? r th(sp-a) with p being the power dissipation and r th(sp-a) being the thermal resistance between the solder point and ambient. r th(sp-a) is determined by the heat transfer properties in the application. the heat transfer properties are set by the appl ication board materials, the board layout and the environment e.g. housing. 9. characteristics table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point [1] 30 k/w fig 1. power derating curve d d d 7 v s ? & |