tm may 2009 FDMA1023PZ dual p-channel powertrench ? mosfet ?200 9 fairchild semiconductor corporation FDMA1023PZ rev.c 3 www.fairchildsemi.com 1 FDMA1023PZ dual p-channel powertrench ? mosfet C20v, C3.7a, 72m : features ? max r ds(on) = 72m : at v gs = C4.5v, i d = C3.7a ? max r ds(on) = 95m : at v gs = C2.5v, i d = C3.2a ? max r ds(on) = 130m : at v gs = C1.8v, i d = C2.0a ? max r ds(on) = 195m : at v gs = C1.5v, i d = C1.0a ? low profile - 0.8 mm maximum - in the new package microfet 2x2 mm ? hbm esd pro tection level > 2kv typical (note 3) ? rohs compliant general description this device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. it features two independent p-channel mosfets with low on-state resistance for minimum conduction losses. when connected in the typical common source configuration, bi-directional current flow is possible. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage C20 v v gs gate to source voltage 8 v i d drain current -continuous (note 1a) C3.7 a -pulsed C6 p d power dissipation (note 1a) (note 1b) 1.5 w 0.7 t j , t stg operating and storage junction temperature range C55 to +150 c r t ja thermal resistance for single operation, junction to ambient (note 1a) 86 c/w r t ja thermal resistance for single operation, junction to ambient (note 1b) 173 r t ja thermal resistance for dual operation, junction to ambient (note 1c) 69 r t ja thermal resistance for dual operation, junction to ambient (note 1d) 151 device marking device package reel size tape width quantity 023 FDMA1023PZ microfet 2x2 7 8mm 3000 units microfet 2x2 pin 1 s1 g1 d2 d1 g2 s2 1 3 2 4 5 6 s1 g1 d2 d1 g2 s2 d1 d2 free from halogenated compounds and antimony oxides ?
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.c 3 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = C250 p a, v gs = 0v C20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = C250 p a, referenced to 25c C11 mv / c i dss zero gate voltage drain current v ds = C16v, v gs = 0v C1 p a i gss gate to source leakage current v gs = 8v, v ds = 0v 10 p a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = C250 p a C0.4 C0.7 C1.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = C250 p a, referenced to 25c 2.5 mv/c r ds(on) static drain to source on-resistance v gs = C4.5v, i d = C3.7a 60 72 m : v gs = C2.5v, i d = C3.2a 75 95 v gs = C1.8v, i d = C2.0a 100 130 v gs = C1.5v, i d = C1.0a 130 195 v gs = C4.5v, i d = C3.7a,t j =125c 81 91 g fs forward transconductance v ds = C5v, i d = C3.7a 12 s dynamic characteristics c iss input capacitance v ds = C10v, v gs = 0v, f = 1mhz 490 655 pf c oss output capacitance 100 135 pf c rss reverse transfer capacitance 90 135 pf switching characteristics t d(on) turn-on delay time v dd = C10v, i d = C1a v gs = C4.5v, r gen = 6 : 918ns t r rise time 12 22 ns t d(off) turn-off delay time 64 103 ns t f fall time 37 60 ns q g(tot) total gate charge v dd = C10v, i d = C3.7a v gs = C4.5v 8.6 12 nc q gs gate to source gate charge 0.7 nc q gd gate to drain miller charge 2.0 nc drain-source diode characteristics i s maximum continuous source-drain diode forward current C1.1 a v sd source to drain diode forward voltage v gs = 0v, i s = C1.1a (note 2) C0.8 C1.2 v t rr reverse recovery time i f = C3.7a, di/dt = 100a/ p s 32 48 ns q rr reverse recovery charge 15 23 nc
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.c 3 www.fairchildsemi.com 3 notes: 1: r t ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a) r t ja = 86c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick pcb. for single operation. (b) r t ja = 173c/w when mounted on a minimum pad of 2 oz copper. for single operation. (c) r t ja = 69 o c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5 x 1.5 x 0.062 thick pcb, for dual operation. (d) r t ja = 151 o c/w when mounted on a minimum pad of 2 oz copper. for dual operation. 2: pulse test : pulse width < 300us, duty cycle < 2.0% 3: the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . a) 86 o c/w when mounted on a 1 in 2 pad of 2 oz copper. b) 173 o c/w when mounted on a minimum pad of 2 oz copper. c) 69 o c/w when mounted on a 1 in 2 pad of 2 oz copper. d) 151 o c/w when mounted on a minimum pad of 2 oz copper.
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.c 3 www.fairchildsemi.com 4 typical characteristics t j = 25c unless otherwise noted figure 1. 0.00.51.01.52.0 0 1 2 3 4 5 6 v gs = -4.5v v gs = -3.0v v gs = -2.0v v gs = -2.5v v gs = -1.5v v gs = -1.8v pulse duration = 300 p s duty cycle = 2.0%max - i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0123456 0.6 1.0 1.4 1.8 2.2 2.6 v gs = -2.5v v gs = -2.0v v gs = -3.0v v gs = -4.5v v gs = -1.8v v gs = -1.5v pulse duration = 300 p s duty cycle = 2.0%max normalized drain to source on-resistance -i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -3.7a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0123456 40 80 120 160 200 pulse duration = 300 p s duty cycle = 2.0%max t j = 125 o c t j = 25 o c i d = -1.85a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 6 v dd = -5v pulse duration = 300 p s duty cycle = 2.0%max t j = -55 o c t j = 25 o c t j = 125 o c - i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.c 3 www.fairchildsemi.com 5 figure 7. 0246810 0 1 2 3 4 5 i d = -3.7a v dd = -10v v dd = -5v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -15v gate charge characteristics figure 8. 0.1 1 10 100 1000 40 f = 1mhz v gs = 0v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 20 capacitance characteristics f i g u r e 9 . f o r w a r d b i a s s a f e operating area 0.1 1 10 0.01 0.1 1 10 20 v gs =-4.5v single pulse r t ja = 173 o c/w t a = 25 o c 60 1s dc 10s 100ms 10ms 1ms 100us r ds(on) limit -i d , drain current (a) -v ds , drain to source voltage (v) figure 10. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 0.5 v gs = -10v single pulse r t ja = 173 o c/w t a =25 o c single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation figure 11. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 0.005 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMA1023PZ dual p-channel powertrench ? mosfet FDMA1023PZ rev.c 3 www.fairchildsemi.com 6 rev3 dimensional outline and pad layout
trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ?* fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by co untry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and ou r authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i40 FDMA1023PZ dual p-channel powertrench ? mosfet fdma10 23pz rev.c 3 www.fa irchild s e mi .com 7
|
