absolute maximum ratings parameter units i d @v gs = -12v, t c = 25c continuous drain current -35* i d @v gs = -12v, t c = 100c continuous drain current -24 i dm pulsed drain current -140 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current -35 a e ar repetitive avalanche energy 25 mj dv/dt peak d iode recovery dv/dt -16 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in. (1.6mm) from case for 10s) weight 9.3 (typical) g pd-91415g pre-irradiation international rectifier?s rad-hard hexfet tm technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a www.irf.com 1 to-254aa product summary part number radiation level r ds(on) i d qpl part number IRHM9160 100k rads (si) 0.073 ? -35a* jansr2n7425 irhm93160 300k rads (si) 0.073 ? -35a* jansf2n7425 for footnotes refer to the last page IRHM9160 jansr2n7425 radiation hardened 100v, p-channel power mosfet ref: mil-prf-19500/660 thru-hole (to-254aa) rad-hard ? hexfet ? t echnology *current is limited by package features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight
IRHM9160 pr e-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d =-1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.11 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.073 v gs = -12v, i d = -22a resistance ? ? 0.075 ? v gs = -12v, i d = -35a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 15 ? ? s ( ) v ds >-15v, i ds = -22a i dss zero gate voltage drain current ? ? -25 v ds = -80v ,v gs =0v ? ? -250 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 290 v gs =-12v, i d = -35a q gs gate-to-source charge ? ? 72 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 77 t d (on) turn-on delay time ? ? 35 v dd = -50v, i d = -35a, t r rise time ? ? 170 v gs =-12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 190 t f fall time ? ? 190 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 6000 ? v gs = 0v, v ds = -25v c oss output capacitance ? 1400 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 400 ? na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.50 r thcs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 48 typi cal socket mount source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -35* i sm pulse source current (body diode) ? ? -140 v sd diode forward voltage ? ? -3.3 v t j = 25c, i s = -35a, v gs = 0v t rr reverse recovery time ? ? 300 ns t j = 25c, i f = -35a, di/dt -100a/ s q rr reverse recovery charge ? ? 2.1 c v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) c/w *current is limited by package
www.irf.com 3 pre-irradiation IRHM9160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? 0.073 ? 0.073 ? v gs = -12v, i d = -22a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.073 ? 0.073 ? v gs = -12v, i d = -22a on-state resistance (to-254aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHM9160 (jansr2n7425) 2. part number irhm93160 (jansf2n7425) fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page v sd diode forward voltage ? -3.3 ? -3.3 v v gs = 0v, i s = -35a -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i
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IRHM9160 pr e-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 5 6 7 8 9 10 11 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -38a
www.irf.com 5 pre-irradiation IRHM9160 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c , c apac it ance ( p f) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -35a v = -20v ds v = -50v ds v = -80v ds 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRHM9160 pr e-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f v gs 25 50 75 100 125 150 0 8 16 24 32 40 t , case temperature ( c) -i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHM9160 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13a. basic gate charge waveform q g q gs q gd v g charge fig 13b. gate charge test circuit d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs 25 50 75 100 125 15 0 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -17a -25a -35a
IRHM9160 pr e-irradiation 8 www.irf.com foot notes: case outline and dimensions ? to-254aa repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l=0.82mh peak i l = -35a, v gs =-12v i sd -35a, di/dt -480a/ s, v dd -100v, t j 150c pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2005
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