p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 1 6 5 0 v n - c hannel mosfet v oltage 6 5 0 v c urrent 3 a ito - 220ab - f to - 220ab to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 1 .5 a < 3.75 ? high switching speed ? imp roved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 251ab ,to - 252 , to - 220 ab , ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297grams ? to - 252 approx. weight : 0.0104 ounces, 0.297grams ? to - 220ab approx. weight : 0.06 7 ounces, 1.89 grams ? ito - 220ab - f approx. weight : 0.068 ounc es, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 220ab ito - 220ab - f to - 252 units drain - source voltage v ds 6 5 0 v gate - source voltage v gs + 30 v continuous drain current i d 3 a p ulsed drain current i dm 12 a single pulse avalanche energy (note 1 ) e as 12 5 mj power dissipation t c =25 o c p d 34 44 23 34 w derate above 25 o c 0.2 7 0.35 0.18 0.27 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical ther mal resistance - junction to case - j unction to ambient r jc ja 3.68 110 2.84 62.5 5.43 120 3.67 110 o c /w ? limited only by maximum junction temperature
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 6 5 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 - 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 1 .5 a - 3.2 3.75 dss v ds = 6 5 0v,v gs =0v - - 1 .0 ua gate - source leakage current i gss v gs = + 30 v,v ds =0v - - + 100 na diode forward voltage v sd i s = 3 a,v gs =0v - 0.8 3 1.4 v dynamic (note 4 ) total gate charge q g v ds = 52 0 v, i d = 3 a, v gs =10v (note 2,3 ) - 1 6.1 - nc gate - source charge q gs - 2. 5 - gate - drain charge q gd - 7 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 4 23 - pf output capacitance coss - 55 - reverse transfer capacitance crss - 3. 6 - turn - on delay time td (on) v dd = 3 25 v, i d = 3 a, r g = 25 (note 2,3 ) - 8 .6 - ns turn - on rise time t r - 2 9 - turn - off delay time td (off) - 42 - turn - off fall time t f - 31 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 3 a maximum pulsed drain - source diode forwa rd current i sm --- - - 12 a reverse recovery time trr v gs =0v, i s = 3 a di f / dt=100a/us (note 2 ) - 2 24 - ns reverse recovery charge qrr - 1. 8 - uc notes : 1. l=30mh, i as =2.8 a, v dd = 50 v, r g = 2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially i ndependent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. dra in current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperat ure fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transie nt thermal impedance vs. pulse width fig. 14 pjp normalized transient thermal impedance vs. pulse width fig. 15 pjf normalized transient thermal impedance vs. pulse width
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252 dimension u nit: mm to - 251ab dimension u nit: mm
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u 4 na6 5 h _t0_00001 to - 2 51a b 80pcs / tube u4 na6 5 h halogen free pjd4 na6 5 h _l2_00001 to - 252 3,000pcs / 13
p p j u 4 na6 5 h / pj d 4 na 6 5 h / pj p 4 na 6 5 h / pj f 4 na6 5 h april 17,2015 - rev.00 page 8 disclaimer
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