p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 1 5 00 v n - c hannel mosfet v oltage 5 0 0 v c urrent 1 a to - 92 sot - 223 to - 252 to - 251ab f eatures ? r ds(on) , v gs @10v,i d @ 0.5 a< 9 ? high switching spe ed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 251ab, to - 252 , sot - 223 , to - 92 package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251ab approx. weight : 0.0104 ounces, 0.297 grams ? to - 252 approx. weight : 0.0104 ounces, 0.297 grams ? sot - 223 approx. weight : 0.043 ounces, 0.123 grams ? to - 92 approx. weight : 0.007 ounces, 0.196 g rams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251ab to - 252 sot - 223 to - 92 units drain - source voltage v ds 5 00 v gate - source voltage v gs + 30 v continuous drain current i d 1 0.3 a pulsed drai n current i dm 4 1.2 a single pulse avalanche energy (note 1 ) e as 4 2 mj power dissipation t c =25 o c p d 2 5 3.3 3 w derate above 25 o c 0.2 0.026 0.024 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 5 110 - 37.9 (note 4 ) - 14 0 o c /w ? limited only by maximum junction temperature
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units s tatic drain - source breakdown voltage bv dss v gs =0v,i d =250ua 5 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3.02 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 0.5 a - 7.6 9 dss v ds = 5 00v,v gs =0v - 0 .02 1 .0 ua gate - source leakage current i gss v gs = + 30v,v ds =0v - + 20 + 100 na diode forward voltage v sd i s = 1 a,v gs =0v - 0.86 1. 4 v dynamic (note 5 ) total gate charge q g v ds = 400 v, i d = 1 a, v gs =10v (note 2,3 ) - 4.2 - nc gate - source charge q gs - 1.7 - gate - d rain charge q gd - 1.4 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 95 - pf output capacitance coss - 23 - reverse transfer capacitance crss - 0.3 - turn - on delay time td (on) v dd = 250 v, i d = 1 a, r g = 25 (note 2,3 ) - 5 - ns turn - on rise time t r - 20 - turn - off delay time td (off) - 8 - turn - off fall time t f - 24 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 1 a maximum pulsed drain - source diode forward current i sm --- - - 4 a reverse recovery time trr v gs =0v, i s = 1 a di f / dt=100a/us (note 2 ) - 155 - ns reverse recovery charge qrr - 0.53 - uc notes : 1. l=30mh, i as = 1. 6 a, v dd = 50 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially ind ependent of operating temperature typical characteristics . 4. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper . 5. guaranteed by design, not su bject to product ion testing
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe ope rating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized transient thermal impedance vs. pulse width fig. 14 pjw1 na 5 0 normalized transient thermal i mpedance vs. pulse width fig. 15 pjn1 na5 0 normalized transient thermal impedance vs. pulse width
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 6 packaging information . to - 251ab dimension u nit: mm to - 252 dimension u nit: mm s o t - 223 dimension u ni t: mm to - 92 dimension u nit: mm bottom view
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 7 part no packing code version part n o packing code package type packing type marking ver sion pj u 1 na 5 0_t0_00001 to - 2 51ab 80pcs / tube u 1 na 5 0 halogen free pj d1na5 0_ l2 _00001 to - 2 52 3,000pcs / 13
p p jn 1na50 / pj w 1na5 0 / pj u 1na5 0 / pj d 1na5 0 august 07 ,2014 - rev.01 page 8 disclaimer
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