symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 17.4 30 50 60 r q jc 2.3 3 w t a =70c 1.3 powerdissipation a t a =25c p dsm 2 repetitiveavalancheenergyl=0.1mh c 20 a mj junctionandstoragetemperaturerange a p d c 5025 55to175 t c =100c avalanchecurrent c 12 i d 1210 30 pulseddraincurrent c powerdissipation b t c =25c continuousdraincurrent g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted vv 20 gatesourcevoltage drainsourcevoltage 40 c/w maximumjunctiontoambient a steadystate c/w w maximumjunctiontocase b steadystate c/w thermal characteristicsparameter units maximumjunctiontoambient a t10s r q ja AOD454n-channel enhancement mode field effect transistor features v ds (v)=40v i d =12a(v gs =10v) r ds(on) <33m w (v gs =10v) r ds(on) <47m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theAOD454usesadvancedtrenchtechnologyanddesigntoprovideexcellentr ds(on) withlowgate charge.thisdeviceissuitableforuseinpwm,loadswitchingandgeneralpurposeapplications. rohscompliant halogenfree* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
AOD454 symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.8 2.3 3 v i d(on) 30 a 25 33 t j =125c 39 52 34 47 m w g fs 25 s v sd 0.76 1 v i s 12 a c iss 404 500 pf c oss 95 150 pf c rss 37 60 pf r g 2.7 w q g (10v) 9.2 nc q g (4.5v) 4.5 nc q gs 1.6 nc q gd 2.6 nc t d(on) 3.5 ns t r 6 ns t d(off) 13.2 ns t f 3.5 ns t rr 22.9 ns q rr 18.3 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverycharge i f =12a,di/dt=100a/ m s maximumbodydiodecontinuouscurrentinputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetimeturnoffdelaytime v gs =10v,v ds =20v,r l =1.7 w , r gen =3 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =20v,i d =12a gatesourcechargegatedraincharge totalgatecharge m w v gs =4.5v,i d =6a i s =1a,v gs =0v v ds =5v,i d =12a r ds(on) staticdrainsourceonresistanceforwardtransconductance diodeforwardvoltage i dss m a gatethresholdvoltage v ds =v gs , i d =250 m a v ds =32v,v gs =0v v ds =0v,v gs =20v zerogatevoltagedraincurrentgatebodyleakagecurrent electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bodydiodereverserecoverytime drainsourcebreakdownvoltageonstatedraincurrent i d =10ma,v gs =0v v gs =10v,v ds =5v v gs =10v,i d =12a reversetransfercapacitance i f =12a,di/dt=100a/ m s v gs =0v,v ds =20v,f=1mhz switching parameters a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thepower dissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150c.thevalueinanygivenapplicationdependsonthe user'sspecificboarddesign,andthemaximumtemperatureof175cmaybeusedifthepcballowsit.b.thepowerdissipationp d isbasedont j(max) =175c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupperdissipation limitforcaseswhereadditionalheatsinkingisused.c:repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =175c. d.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureoft j(max) =175c. g.themaximumcurrentratingislimitedbybondwires.h.thesetestsareperformedwiththedevicemountedon1in2fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating.*thisdeviceisguaranteedgreenafterdatacode8x11(sep1 st 2008). rev5:sep.2008 alpha & omega semiconductor, ltd. www.aosmd.com
AOD454 typical electrical and thermal characteristics 500150 60 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 25 30 35 40 45 50 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =6a v gs =10v i d =12a 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =12a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 4.5v 5v alpha & omega semiconductor, ltd. www.aosmd.com
AOD454 typical electrical and thermal characteristics 500150 60 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c,t c =25c v ds =20v i d =12a singlepulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =175c t c =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
AOD454 typical electrical and thermal characteristics 500150 60 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z q qq q ja normalized transient thermal resistance singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse 0 2 4 6 8 10 12 14 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t - = t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD454 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform ig vgs + vdc dut l vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f di/dt i rm rr vdd vdd q=idt t rr + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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