<^7v , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BDY91 description ? high dc current gain- : hfe=30-120@lc=5a ? excellent safe operating area ? high current capability applications ? designed for use in switching-control amplifiers, power gates,switch ing regulators, converters, and inverters. absolute maximum ratings(ta=25'c) symbol vcbo vcev vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage vbe= -1.5v collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tcs25'c junction temperature storage temperature range value 100 100 80 6 10 15 2 60 175 -65-175 unit v v v v a a a w c ?c thermal characteristics symbol p-th j-c parameter thermal resistance.junction to case max 2.5 unit c/w pin lease 2. ailtter 3. collector (case) to-3 package on* a e c d e __fi_ h k l n g u v iihi1 mm max 3900 25.30 790 09c 140 2567 8.30 1.10 1.60 1092 5.4$ 11.40 1675 19.40 4.00 30.00 4,30 1350 17.05 19s2 4.20 3020 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY91 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat)-1 vbe(sat)-2 igbo icev iebo hpe-1 hpe-2 hpe-3 fr parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain current-gain ? bandwidth product conditions lc= 100ma ;ib=0 lc= 5a; ib= 0.5a lc= 10a; ib= 1a lc= 5a; ib= 0.5a lc= 10a; ib= 1a vcb=100v; ie=0 vce=100v;vbe=-1.5v vce=1 oov;vbe=-1 .5v;tc=1 50 c veb=6v; lc=0 |c=1a;vce=2v lc=5a;vce=5v ic=10a; vce=5v lc=0.5a;vce=5v;ftest=5mhz min 80 35 30 20 typ 70 max 0.5 1.5 1.2 1.5 1.0 1.0 3.0 1.0 120 unit v v v v v ma ma ma mhz switching times ton tstg tf turn-on time storage time fall time ic=5a;ib1=-ib2=0.5a, vcg=30v 0.35 1.3 0.2 u s 11 s u s
|
