j.e.iu ^zmi-l-onalictoi lpioaucti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BDY92 description ? high dc current gain- : hfe=30-120@lc=5a ? excellent safe operating area ? high current capability applications ? designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. absolute maximum ratings(ta=25'c) symbol vcbo vcev vceo vebo ic i cm ib pc tj tstg parameter collector-base voltage collector-emitter voltage vbe= -1.5v collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=s25'c junction temperature storage temperature range value 80 80 60 6 10 15 2 60 175 -65-175 unit v v v v a a a w c 'c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 2.5 unit r/w pin t.base 2.b?iitter 3. collector (cas^) to-3 package f 1 < i c dim a b c d q h k l n q u v iinn min uax 3900 25.30 7.90 0.90 i 40 26.67 8.30 1.10 1.60 10.92 5.46 11.40 1675 19.40 4.00 30.00 4.30 13.50 17.05 19.62 4.20 3070 450 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY92 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 veefsath vee(sat)-2 icbo icev iebo hpe-1 hfe-2 hpe-3 fr parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain current-gain ? bandwidth product conditions lc=100ma;lb=0 lc= 5a; ib= 0.5a |c=10a;ib= 1a lc= 5a; ib= 0.5a ic=10a;ib=1a vcb=80v; ie=0 vce=80v;vbe=-1.5v vce=80v;vbe=-1 .5v;tc=1 50'c veb=6v; lc=0 lc=1a;vce=2v lc= 5a ; vce= 5v lc=10a;vce=5v lc= 0.5 a;vce= 5v;ftest = 5mhz min 80 30 30 20 typ 70 max 0.5 1.0 1.2 1.5 1.0 1.0 3.0 1.0 120 unit v v v v v ma ma ma mhz switching times ton tstg tf turn-on time storage time fall time lc= 5a; |bi= -ib2= 0.5a, vcc=30v 0.35 1.3 0.2 v s u s u s
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