1. product profile 1.1 general description 270 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 716 mhz to 960 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? device can operate with the supply current delivered through the video leads ? high efficiency ? low thermal resistance providing excellent thermal stability ? designed for broadband operation (716 mhz to 960 mhz) ? lower output capacitance for improved performance in doherty applications ? decoupling leads to enable improved video bandwidth (55 mhz typical) ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? design optimized for gull-wing and straight lead versions ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 716 mhz to 960 mhz frequency range blf8g09ls-270w; BLF8G09LS-270GW power ldmos transistor rev. 2 ? 17 january 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab pr oduction test circuit, tested on straight lead device. test signal f v ds p l(av) g p ? d acpr 5m (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 716 to 728 28 67 20 33 ? 35 [1]
blf8g09ls-270w_8g09ls-270gw all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. product data sheet rev. 2 ? 17 january 2014 2 of 17 nxp semiconductors blf8g09ls-270(g)w power ldmos transistor 2. pinning information [1] connected to flange. [2] device can operate with the supply current delivered through the combined video leads. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf8g09ls-270w (sot1244b) 1drain 2gate 3source [1] 4 video lead [2] 5 video lead [2] 6n . c . 7n . c . BLF8G09LS-270GW (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 video lead [2] 5 video lead [2] 6n . c . 7n . c . d d d d d d table 3. ordering information type number package name description version blf8g09ls-270w - earless flanged ceramic package; 6 leads sot1244b BLF8G09LS-270GW - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf8g09ls-270w_8g09ls-270gw all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. product data sheet rev. 2 ? 17 january 2014 3 of 17 nxp semiconductors blf8g09ls-270(g)w power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g09ls-270w and BLF8G09LS-270GW are capable of withstanding a load mismatch corresponding to vswr = 7 : 1 through all phases under the following conditions: par = 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; v ds =28v; i dq = 2000 ma; 2-carrier w-cdma signal; p l(av) = 51.8 dbm; f = 716 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =67w; v ds =28v; i dq = 2000 ma 0.265 k/w table 6. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 4.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 450 ma 1.5 1.8 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -82- a i gss gate leakage current v gs =11 v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d =450ma - 3.92 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 15.75 a -0.04- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 dpch; f 1 = 718.5 mhz; f 2 = 723.5 mhz; f 3 = 720.5 mhz; f 4 = 725.5 mhz; rf performance at v ds =28v; i dq = 2000 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit, tested on straight lead device. symbol parameter conditions min typ max unit g p power gain p l(av) = 67 w 18.8 20 - db rl in input return loss p l(av) =67w - ? 13 ? 9db ? d drain efficiency p l(av) = 67 w 28 33 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =67w - ? 35 ? 30 dbc
blf8g09ls-270w_8g09ls-270gw all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. product data sheet rev. 2 ? 17 january 2014 4 of 17 nxp semiconductors blf8g09ls-270(g)w power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . 7.3 vbw in class-ab operation the blf8g09ls-270w and BLF8G09LS-270GW show 55 mhz (typical) video bandwidth in class-ab test circuit in 722 mhz band at v ds = 28 v and i dq = 2000 ma. table 8. typical impedance measured load-pull data; i dq =2000ma; v ds = 28 v. typical values unless otherwise specified. f z s [1] z l [1] (mhz) (? ) (? ) 716 1.09 ? j1.62 2.31 ? j1.69 800 1.43 ? j2.41 2.06 ? j0.76 869 1.46 ? j3.21 1.6 ? j0.66 925 1.88 ?? j3.62 1.23 ? j0.39 960 2.22 ? j4.73 1.01 ? j0.55 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf8g09ls-270w_8g09ls-270gw all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all right s reserved. product data sheet rev. 2 ? 17 january 2014 5 of 17 nxp semiconductors blf8g09ls-270(g)w power ldmos transistor 7.4 test circuit printed-circuit board (pcb): rogers ro4350b with a thickness of 0.762 mm. see table 9 for a list of components. fig 2. component layout table 9. list of components for test circuit see figure 2 . component description value remarks c1, c2, c3, c4, c5, c6 multilayer ceramic chip capacitor 510 pf atc100b c8, c9, c10, c11, c12, c13, c14, c15, c16, c17, c18, c19 multilayer ceramic chip capacitor 4.7 ? f, 50 v murata c20, c21 electrolytic capacitor 2200 ? f, 6 3 v r1, r2 resistor 9.1 ? smd 0805 d d d p p p p p p , 1 3 8 7 2 8 7 3 8 7 & |