pnp silicon planar medium power darlington transistors issue 3 ? may 94 features * 120 volt v ceo * 1 amp continuous current * gain of 3k at i c =1 amp *p tot =1 watt applications * lamp, solenoid and relay drivers absolute maximum ratings. parameter symbol ZTX704 ztx705 unit collector-base voltage v cbo -120 -140 v collector-emitter voltage v ceo -100 -120 v emitter-base voltage v ebo -10 v peak pulse current i cm -4 a continuous collector current i c -1 a power dissipation at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX704 ztx705 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -120 -140 v i c =-100 m a collector-emitter breakdown voltage v ceo(sus) -100 -120 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -10 -10 v i e =-100 m a collector cut-off current i cbo -0.1 -10 -0.1 -10 m a m a m a m a v cb =-100v v cb =-120v v cb =-100v, t amb =100c v cb =-120v, t amb =100c collector cut-off current i ces -10 -10 m a v ces =-80v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-8v collector-emitter saturation voltage v ce(sat) -1.3 -2.5 -1.3 -2.5 v v i c =-1a, i b =-1ma* i c =-2a, i b =-2ma* base-emitter saturation voltage v be(sat) -1.8 -1.8 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -1.7 -1.7 v ic=-1a, v ce =-5v* ZTX704 ztx705 3-250 c b e e-line to92 compatible electrical characteristics (at t amb = 25c). parameter symbol ZTX704 ztx705 unit conditions. min. max. min. max. static forward current transfer ratio h fe 3k 3k 3k 2k 30k 3k 3k 3k 2k 30k i c =-10ma, v ce =-5v* i c =-100ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 160 typical 160 typical mhz i c =-100ma, v ce =-10v f=20mhz input capacitance c ibo 90 typical 90 typical pf v eb =-0.5v, f=1mhz output capacitance c obo 15 typical 15 typical pf v ce =-10v, f=1mhz switching times t on 0.6 typical 0.6 typical m s i c =-0.5a, v ce =-10v i b1 =i b2 =-0.5ma t off 0.8 typical 0.8 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit ZTX704 ztx705 voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 22k w 110100 dc conditions r s = 100k w r s = 1m w r s = maximum power dissipation (w) 3-251
pnp silicon planar medium power darlington transistors issue 3 ? may 94 features * 120 volt v ceo * 1 amp continuous current * gain of 3k at i c =1 amp *p tot =1 watt applications * lamp, solenoid and relay drivers absolute maximum ratings. parameter symbol ZTX704 ztx705 unit collector-base voltage v cbo -120 -140 v collector-emitter voltage v ceo -100 -120 v emitter-base voltage v ebo -10 v peak pulse current i cm -4 a continuous collector current i c -1 a power dissipation at t amb = 25c derate above 25c p tot 1 5.7 w mw/ c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX704 ztx705 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -120 -140 v i c =-100 m a collector-emitter breakdown voltage v ceo(sus) -100 -120 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -10 -10 v i e =-100 m a collector cut-off current i cbo -0.1 -10 -0.1 -10 m a m a m a m a v cb =-100v v cb =-120v v cb =-100v, t amb =100c v cb =-120v, t amb =100c collector cut-off current i ces -10 -10 m a v ces =-80v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-8v collector-emitter saturation voltage v ce(sat) -1.3 -2.5 -1.3 -2.5 v v i c =-1a, i b =-1ma* i c =-2a, i b =-2ma* base-emitter saturation voltage v be(sat) -1.8 -1.8 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -1.7 -1.7 v ic=-1a, v ce =-5v* ZTX704 ztx705 3-250 c b e e-line to92 compatible electrical characteristics (at t amb = 25c). parameter symbol ZTX704 ztx705 unit conditions. min. max. min. max. static forward current transfer ratio h fe 3k 3k 3k 2k 30k 3k 3k 3k 2k 30k i c =-10ma, v ce =-5v* i c =-100ma, v ce =-5v* i c =-1a, v ce =-5v* i c =-2a, v ce =-5v* transition frequency f t 160 typical 160 typical mhz i c =-100ma, v ce =-10v f=20mhz input capacitance c ibo 90 typical 90 typical pf v eb =-0.5v, f=1mhz output capacitance c obo 15 typical 15 typical pf v ce =-10v, f=1mhz switching times t on 0.6 typical 0.6 typical m s i c =-0.5a, v ce =-10v i b1 =i b2 =-0.5ma t off 0.8 typical 0.8 typical m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% the maximum permissible operational temperature can be obtained from this graph using the following equation t amb ( max ) = power ( max ) - power ( act ) 0.0057 + 25 c t amb(max ) = maximum operating ambient temperature power(max) = maximum power dissipation figure, obtained from the above graph for a given v ce and source resistance (r s ) power(actual)= actual power dissipation in users circuit ZTX704 ztx705 voltage derating graph v ce - collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0 0.2 r s = 22k w 110100 dc conditions r s = 100k w r s = 1m w r s = maximum power dissipation (w) 3-251
0.01 0.1 20 110 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v olts) i c - co l le c to r cur r e n t ( am ps) v ce - collector voltage (volts) safe operating area 100 110 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.01 0.1 20 1 10 10k 8k 6k 4k 0 2k 16k 14k 12k +100c +25c -55c i c - collector current (amps) h fe v i c h fe - gain v ce =-5v 0.001 0.01 0.1 20 110 -55c +25c +100c +175c i c - collector current (amps) v be(sat) v i c v be (sa t ) - (v olts) i c /i b =1000 0.001 0.01 0.1 20 110 0.8 0.6 1.8 2.4 2.2 2.0 -55c +25c +100c i c - collector current (amps) v be(on) v i c v be - (v olts) v ce =-5v 0.001 1.0 0.8 0.6 0.4 1.6 1.4 1.2 1.8 1.0 0.8 0.6 0.4 1.6 1.4 1.2 1.8 1.0 1.6 1.4 1.2 ZTX704 zt x 70 5 1000 i c /i b =1000 -55c +25c +100c +175c 0.2 0.2 ZTX704 ztx705 3-252
|
