cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 1/6 MTN2510LE3 cystek product specification n-channel enhancement mode power mosfet bv dss 100v i d 50a r ds(on) 30m MTN2510LE3 features ? low gate charge ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol MTN2510LE3 to-220 g gate d drain s source limits unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 50 continuous drain current @ t c =100c i d 35 pulsed drain current (note 1) i dm 150 avalanche current i as 30 a avalanche energy @ l=0.1mh, i d =30a, r g =25 e as 45 repetitive avalanche energy@ l=0.05mh (note 2) e ar 22.5 mj t c =25 c 155 power dissipation p d w t c =100 c 61 operating junction and storage temperature tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1%
cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 2/6 MTN2510LE3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.97 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0v, i d =250 a v gs(th) 1.0 1.7 3.0 v v ds = v gs , i d =250 a g fs - 38 - s v ds =5v, i d =30a i gss - - 100 na v gs = 20 - - 1 a v ds =80v, v gs =0v i dss - - 25 a v ds =70v, v gs =0v, tj=125 c - 22 30 v gs =10v, i d =30a *r ds(on) - 28 35 m v gs =5v, i d =20a *i d(on) 50 - - a v ds =10v, v gs =10v dynamic *qg - 45 - *qgs - 15 - *qgd - 25 - nc i d =30a, v ds =80v, v gs =10v *t d(on) - 25 - *tr - 200 - *t d(off) - 100 - *t f - 120 - ns v ds =50v, i d =1a, v gs =10v, r g =6 ciss - 6087 - coss - 224 - crss - 68 - pf v gs =0v, v ds =50v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 50 *i sm - - 150 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 120 - ns *qrr - 380 - nc i f =25a, v gs =0, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping mtn2510e3 to-220 (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton
cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 3/6 MTN2510LE3 cystek product specification typical characteristics
cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 4/6 MTN2510LE3 cystek product specification typical characteristics(cont.)
cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 5/6 MTN2510LE3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c741e3 issued date : 2012.03.07 revised date : page no. : 6/6 MTN2510LE3 cystek product specification to-220 dimension *: typical inches a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-220 plastic package cystek package code: e3 marking: cys n2510. 1 2 3 device name date code millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2441 0.2598 6.20 6.60 i - * 0.1508 - * 3.83 b 0.3386 0.3543 8.60 9.00 k 0.0299 0.0394 0.76 1.00 c 0.1732 0.1890 4.40 4.80 m 0.0461 0.0579 1.17 1.47 d 0.0492 0.0571 1.25 1.45 n - * 0.1000 - * 2.54 e 0.0142 0.0197 0.36 0.50 o 0.5217 0.5610 13.25 14.25 g 0.3858 0.4094 9.80 10.40 p 0.5787 0.6024 14.70 15.30 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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