dmn2005lpk document number: ds30836 rev. 9 - 2 1 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk n-channel enhancement mode mosfet features ? low on-resistance ? low gate threshold voltage ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? esd protected gate ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 4) part number marking reel size (inches) tape width (mm) quantity per reel dmn2005lpk -7 dm 7 8 3,000 dmn2005lpk -7b dm 7 8 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more info rmation about diodes incorporat ed?s definitions of halogen- and antimony-free, "green " and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information x1-dfn1006-3 equivalent circuit top view internal schematic bottom view source body diode gate protection diode gate drain d s g esd protected dm = product type marking code dm dm dmn2005lpk -7 dmn2005lpk -7b top view bar denotes gate and source side top view dot denotes drain side e4
dmn2005lpk document number: ds30836 rev. 9 - 2 2 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk maximum ratings (@t a = 25c unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 20 v gate-source voltage v gss 10 v drain current per element (note 5) i d 440 ma thermal characteristics characteristic symbol value unit total power dissipation (note 5) p d 450 mw thermal resistance, junction to ambient r ja 218 c/w operating and storage temperature range t j , t stg -65 to +150 c electrical characteristics (@t a = 25c unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 100 a zero gate voltage drain current i dss ? ? 10 a v ds = 17v, v gs = 0v gate-source leakage i gss ? ? 5 a v gs = 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.53 ? 1.2 v v ds = v gs , i d = 100 a static drain-source on-resistance r ds (on) ? ? ? ? ? 0.35 0.4 0.45 0.55 0.65 1.5 1.7 1.7 3.5 3.5 v gs = 4v, i d = 10ma v gs = 2.7v, i d = 200ma v gs = 2.5v, i d = 10ma v gs = 1.8v, i d = 200ma v gs = 1.5v, i d = 1ma forward transfer admittance |y fs | 40 ? ? ms v ds = 3v, i d = 10ma notes: 5. device mounted on fr-4 pcb. 6. short duration pulse test used to minimize self-heating effect.
dmn2005lpk document number: ds30836 rev. 9 - 2 3 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk 0 0.5 1.0 1.5 2.0 01 2 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i, d r ain c u r r en t (a) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 1.8v gs v = 4.5v gs v = 2.5v gs v= 1.5v gs v= 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dmn2005lpk document number: ds30836 rev. 9 - 2 4 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i, s o u r c e c u r r en t (a) s t = 25c a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = 10v i = 250ma ds d
dmn2005lpk document number: ds30836 rev. 9 - 2 5 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 221c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 package outline dimensions suggested pad layout x1-dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
dmn2005lpk document number: ds30836 rev. 9 - 2 6 of 6 www.diodes.com june 2012 ? diodes incorporated dmn2005lpk important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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