MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 description these miniature surface mount mosfets utilize a high cell density trench process to provide low rds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc - dc converters and power management in portable and b attery - powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low rds(on) provides higher efficiency and extends battery life ? low thermal impedance copper lead frame tssop - 8 saves board space ? fast s witching speed ? high performance trench technology typical applications: ? battery powered instruments ? portable computing ? mobile phones ? gps units and media players ? rohs compliant package packing & order information 3,000/reel graphic symbo l
MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 maximum ratings and electrical characteristics absolute maximum ratings (t a =25c unless otherwise specified) symbol parameter value unit v ds drain - source voltage 20 v v gs gate - source voltage 8 v i d continuous drain current a (t a =25 c ) 6.8 a continuous drain current a (t a = 70 c ) 5.5 a i dm pulsed drain current b 30 a i s continuous source current (diode conduction) a 2.2 a p d power dissipation a ( t a =25c) 1.5 w power dissipation a (t a = 70 c ) 1 w t j /t stg operating junction and stora ge temperature - 55 to +150 c t hermal r esistance r atings symbol parameter maximum unit s r ja maximum junction - to - ambient a ( t <= 10 sec ) 83 c /w maximum junction - to - ambient a ( steady - state ) 120 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature static symbol parameter test conditions min t yp. max. unit s v gs(th) gate - source threshold voltage v ds = v gs , i d = - 250a 0.4 v i g ss gate - body leakage v d s = 0 v , v gs = 8 v 100 na i dss zero gate voltage drain current v d s = 16 v , v gs = 0 v v d s = 16 v , v gs = 0 v , t j = 5 5 c 1 10 u a i d(on) on - state drain current v ds = 5 v, v gs = 4.5 v 25 a r ds(on) drain - source on - resistance v ds = 4.5 v, i d = 5.0 a v ds = 2 .5 v, i d = 4 .3 a v ds = 1.8 v, i d = 3.5 a 22 30 46 m g fs forward tranconductance v g s = 10 v, i d = 5.0 a 25 s v sd diode forward vol tage i s = 2 .2 a , v gs = 0 v 0. 7 v
MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 dynamic symbol parameter test conditions min typ. max. unit s q g total gate charge v ds = 1 0 v , i d = 4.5 a, v g s = 5.0 v -- 6.2 -- nc q gs gate - source charge -- 1.0 -- nc q g d gate - drain charge -- 1.9 -- nc t d(on) turn - on delay time i d = 5.0 a , r l = 2.0 , v g en = 10 v , r g en = 6 v d d = 1 0 v -- 12 -- ns t r rise time -- 15 -- ns t d(off) turn - off delay time -- 56 -- ns tf fall time -- 17 -- ns c iss input capacitance v ds = 10 v f = 1 mhz , v g s = 0 v -- 479 -- pf c oss output capacitance -- 72 -- pf c rss reverse transfer capacitance -- 58 -- pf notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing.
MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 typical electrical characteristics fig.1 - on region characteristics fig. 2 - transfer character istics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 typical electrical char acteristics fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MS69N68 dual n - channel 20 - v (d - s) mosfet publication order number: [ MS69N68 ] ? bru ckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in an y other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by appli cable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, in cluding warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties descr ibed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or other wise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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