1. product profile 1.1 general description a 200 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 600 mhz band. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 600 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blp05h6200xr power ldmos transistor rev. 1 ? 18 may 2015 objective data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) pulsed rf 108 50 200 28 75
blp05h6200xr all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all right s reserved. objective data sheet rev. 1 ? 18 may 2015 2 of 9 nxp semiconductors blp05h6200xr power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. [3] see . table 2. pinning pin description simplified outline graphic symbol 1gate 2 2gate 1 3drain 1 4drain 2 5source [1] s l q l q g h [ d d d table 3. ordering information type number package name description version blp05h6200xr hsop4f plastic, heatsink small outline package; 4 leads(flat) sot1223-2 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 135 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 115 ?c [1] [2] k/w z th(j-c) transient thermal impedance from junction to case t j = 150 ?c; t p = 100 ? s; ? =20% [3] k/w
blp05h6200xr all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all right s reserved. objective data sheet rev. 1 ? 18 may 2015 3 of 9 nxp semiconductors blp05h6200xr power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blp05h6200xr is capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =100ma; p l = 200 w pulsed; f = 108 mhz. table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.0ma135--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 100 ma 1.25 1.8 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =50ma - 1.7 - v i dss drain leakage current v gs =0v; v ds =50v--1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -14.3-a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =3.5a -0.43- ? table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 0.9 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 120 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 39 - pf table 8. rf characteristics test signal: pulsed rf; t p = 100 ? s; ? = 20 %; f = 108 mhz; rf performance at v ds =50v; i dq = 100 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 200 w 28 - db rl in input return loss p l = 200 w - ? 10 - db ? d drain efficiency p l = 200 w 75 - %
blp05h6200xr all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all right s reserved. objective data sheet rev. 1 ? 18 may 2015 4 of 9 nxp semiconductors blp05h6200xr power ldmos transistor 7.2 impedance information 7.3 uis avalanche energy for information see application note an10273 . fig 1. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 200 w. f z i z l (mhz) (? ) ( ? ) 108 d d q j d w h j d w h g u d l q g u d l q = l = / table 10. typical avalanche data per section t amb = 25 ? c; typical test data; test jig without water cooling. i as e as (a) (j)
blp05h6200xr all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all right s reserved. objective data sheet rev. 1 ? 18 may 2015 5 of 9 nxp semiconductors blp05h6200xr power ldmos transistor 8. package outline fig 2. package outline sot1223-2 (hsop4f) 5 h i h u h q f h v 2 x w o l q h y h u v l r q ( x u r s h d q s u r m h f w l r q , v v x h g d w h , ( & - ( ' ( & - ( , 7 $ 6 2 7 v r w b s r 8 q l w p p p d [ q r p p l q $ ' l p h q v l r q v p p d u h w k h r u l j l q d o g l p h q v l r q v + 6 2 3 ) s o d v w l f k h d w v l q n v p d o o r x w o l q h s d f n d j h o h d g v i o d w 6 2 7 $ $ e f ' ' ' ( ( ( h h h h h ) ' ( 4 y z \ + ( p p v f d o h g h w d l o ; ' ( f + ( ' ( ( $ $ 4 $ ( ' ' \ % $ y $ ; z % e s l q l q g h [ ) [ 1 r w h 3 d f n d j h e r g \ g l p h q v l r q v 3 ' d q g 3 ( g r q r w l q f o x g h p r o g d q g p h w d o s u r w u x v l r q v $ o o r z d e o h s u r w u x v l r q l v p p s h u v l g h / h d g z l g w k g l p h q v l r q 3 e g r h v q r w l q f o x g h g d p e d u s u r w u x v l r q v $ o o r z d e o h g d p e d u s u r w u x v l r q l v p p l q w r w d o s h u o h d g [ 0 ( 7 $ / 3 5 2 7 5 8 6 , 2 1 6 6 2 8 5 & |