SI6433DQ vishay siliconix document number: 70168 s-49534erev. g, 06-oct-97 www.vishay.com faxback 408-970-5600 2-1 p-channel 2.5-v (g-s) mosfet v ds (v) r ds(on) ( ) i d (a) 12 0.06 @ v gs = 4.5 v 4.0 12 0.09 @ v gs = 2.5 v 3.0 SI6433DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 4.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.2 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.4 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI6433DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70168 s-49534erev. g, 06-oct-97
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