dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information 100v 175c n - channel enhancement mode mosfet p ower di product summary b v dss r ds(on) max i d t c = + 25c 100 v 1 6 m? @ v gs = 10 v 44 a 18 m? @ v gs = 6 v 41 a description this new generation n - channel enhancement mode mosfe t is designed to minimize r ds( on ) , yet maintain superior switching performance. this device is ideal for use in n otebook battery power management and l oadswitch. applications ? motor control ? dc - dc converters ? power management features ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C e nsures m ore r eli able and robust end application ? high conversion efficiency ? low r ds( on ) C minimizes on - state losses ? low input capacitance ? fast switching speed ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 5060 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t h 10h 01 5 l ps - 13 p ower di5060 - 8 2 , 500 /tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic p ower di5060 - 8 pin1 s d d g d d s s th 1015ls s s s g d d d d yy ww = manufacturers t h 1015ls = product type marking code yyww = date code marking yy = last digit of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) p ower di is a registered trademark of diodes incorporated. d s g green
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 10 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = 10 v steady state t a = +25c t a = +70c i d 7.3 5.8 a steady state t c = + 25c t c = + 10 0c i d 44 28 a pulsed drain curren t ( 10 dm 120 a maximum continuous body diode f orward current (note 5 ) i s 1.5 a avalanche current (note 7 ) l= 3 mh i as 7.5 a avalanche energy (note 7 ) l= 3 mh e as 85 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = +25c p d 1.3 w thermal resistance, junction to ambient (note 5 ) r ja 98 c/w total power dissipation t c = +25c p d 46 w thermal resistance, junction to case r j c 2.7 c/w operating and storage temperature range t j, t stg - 55 to + 1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 100 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 80 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) 1.4 2 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? gs = 10 v, i d = 20 a gs = 6 v, i d = 20 a gs = 4.5 v, i d = 5 a diode forward voltage v sd 1.3 v v gs = 0v, i s = 20 a dynamic characteristics (note 7 ) input capacitance c iss ds = 50 v, v gs = 0v f = 1mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? d d = 50 v, i d = 10 a , v gs = 10 v gate - source charge q gs gd d( on ) dd = 50 v, v gs = 10 v, i d = 10 a , r g = 6 ? r d( off ) f rr f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 5. device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v = 6.0v gs v = 3.6v gs v = 4.5v gs v = 10v gs v = 5.0v gs v = 4.0v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 4.5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics t = 175c a 4 8 12 16 20 24 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 10 20 30 40 50 0 4 8 12 16 20 i = 20a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0.026 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature t = 175c a 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 v = 6.0v gs i = 20a d v = 10v gs i = 20a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information 0 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 0 25 50 75 100 125 150 175 v = 6.0v gs i = 20a d v = 10v gs i = 20a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a t = 175c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 1 10 100 1000 10000 0 10 20 30 40 50 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 10 0 5 10 15 20 25 30 35 v = 50v ds i = 10a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 r ds(on) limited dc p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 1s w t = 175c j(m ax) t = 25c c v = 10v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area p = 10s w
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? jc jc r = 1.5c/w ? jc duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10 12 11 1 6 8 7 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
dm t h 10h015l ps document number: ds 38713 rev. 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated dm t h 10h015l ps advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorpora ted products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incor porated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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