cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 1/6 BTD2498N3 preliminary cystek product specification high voltage npn epitaxial planar transistor built-in base resistor BTD2498N3 description ? high breakdown voltage. (bv ceo =400v) ? low saturation voltage, typical v ce(sat) =0.13v at ic/i b =20ma/1ma. ? complementary to btb1498n3 ? pb-free package equivalent circuit outline BTD2498N3 b : base c : collector e : emitter sot-23 absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current i c 300 ma total power dissipation pd 225 mw thermal resistance, junction to ambient r ja 556 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 2/6 BTD2498N3 preliminary cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 400 - - v i c =50 a bv ceo 400 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =400v i cer - - 10 na v ce =300v, r eb =4k i ebo - - 100 na v eb =6v *v ce(sat) - 0.13 0.18 v i c =20ma, i b =1ma *v ce(sat) - 0.11 0.18 v i c =50ma, i b =5ma *v ce(sat) - 0.16 0.3 v i c =100ma, i b =10ma *v be(sat) - - 3.7 v i c =20ma, i b =2ma *h fe 50 - 270 - v ce =10v, i c =10ma *h fe 50 - - - v ce =10v, i c =100ma r 0.7 - 1.3 k - f t - 100 - mhz v ce =10v, i c =10ma, f=5mhz cob - 13 - pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping BTD2498N3 sot-23 (pb-free) 3000 pcs / tape & reel recommended soldering footprint
cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 3/6 BTD2498N3 preliminary cystek product specification typical characteristics current gian vs collector current 10 100 1 10 100 1000 collector current---ic(ma) current gain---hfe vce = 5v vce = 10v saturation voltage vs collector current 10 100 1000 10000 100000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vce(sat) @ ic =10ib vce ( sat ) @ ic = 20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbe(sat) ic=10ib ic=20ib power derating curve 0 0.05 0.1 0.15 0.2 0.25 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w)
cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 4/6 BTD2498N3 preliminary cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 5/6 BTD2498N3 preliminary cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c899n3 issued date : 2009.12.23 revised date : page no. : 6/6 BTD2498N3 preliminary cystek product specification sot-23 dimension *: typical inches h j k d a l g v c b 3 2 1 s style: pin 1.base 2.emitter 3.collector marking: te 3-lead sot-23 plastic surface mounted package cystek package code: n3 dh millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.85 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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