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  us1j-q us1j-q ultrafast switching surface mount silicon rectifier diodes (aec-q101) ultraschnelle silizium-gleichrichterdioden fr die oberfl?chenmontage (aec-q101) version 2014-10-17 dimensions - ma?e [mm] nominal current C nennstrom 1 a repetitive peak reverse voltage periodische spitzensperrspannung 600 v plastic case kunststoffgeh?use ~ sma ~ do-214ac weight approx. C gewicht ca. 0.07 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings grenzwerte type typ repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] surge peak reverse voltage sto?spitzensperrspannung v rsm [v] us1j-q 600 600 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t t = 100c i fav 1 a repetitive peak forward current - periodischer spitzenstrom f > 15 hz i frm 6 a 1 ) peak forward surge current, 50 hz half sine-wave sto?strom fr eine 50 hz sinus-halbwelle t a = 25c i fsm 30 a rating for fusing, t < 10 ms - grenzlastintegral, t < 10 ms t a = 25c i 2 t 4.5 a 2 s junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c characteristics kennwerte type typ reverse recovery time sperrverzugszeit t rr [ns] 2 ) forward voltage durchlass-spannung v f [v] at / bei i f [a] us1j-q < 75 < 1.4 1.5 leakage current sperrstrom t j = 25c t j = 100c v r = 660 v v r = v rrm i r i r < 0.7 a < 10 a thermal resistance junction to ambient air w?rme widerstand sperrschicht C umgebende luft r tha < 70 k/w 3 ) thermal resistance junction to terminal w?rme widerstand sperrschicht C anschluss r tht < 30 k/w 1 max. temperature of the terminals t t = 100c C max. temperatur der anschlsse t t = 100c 2 i f = 0.5 a through/ber i r = 1 a to/auf i r = 0.25 a 3 mounted on p.c. board with 25 mm 2 copper pads at each terminal montage auf leiterplatte mit 25 mm 2 kupferbelag (l?tpad) an jedem anschluss ? diotec semiconductor ag http://www.diotec.com/ 1 type typ 0.15 1 0.3 4.5 0.3 1 . 5 0 . 1 2 . 1 0 . 2 2 . 2 0 . 2 5 0.2 2 . 7 0 . 2
us1j-q 2 http://www.diotec.com/ ? diotec semiconductor ag [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) [v] v f 10 1 0.1 10 10 -2 -3 us1j-q t = 25c j rated forward current vs. temp. of the terminals in abh. v. d. temp. der terminals zul. richtstrom 120 100 80 60 40 20 0 i fav [% ] [c] t t 150 100 50 0 0,1 1 10 0,1 1 10 i frm [a] t p [ms] rep. peak forward current vs pulse duration periodischer spitzenstrom ber pulsdauer t_t = 100c t_t = 125c typical reverse recovery current versus -di /dt typische rckstromspitze in abh?ngigkeit von - f di /dt f i rm [a] 12 10 8 6 4 2 0 [a/s] -di /dt f 300 200 50 0 t = 25c j t = 125c j 0.5x i fav i fav 2x i fav typical reverse recovery time versus i typische sperrverzugszeit in abh?ngigkeit von i f f t rr [ns] 120 100 80 60 40 20 0 [a] i f 2 1 0.5 0 t = 125c j 1.5 t = 25c j -di /dt = 50a/s f -di /dt = 200a/s f


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