dm th4004sk3 q document number: ds 38660 rev. 1 - 2 1 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q 40v 175c n - channel enhancement mode mosfet product summary b v dss r ds(on) m ax qg t yp i d t c = + 25c (note 10 ) 40 v 3 .2 m? @ v gs = 10 v 6 8.6 nc 100 a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dc / dc converters features ? rated to + 175 ? c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C e nsures m ore r eli able and r obust e nd a pplication ? low r ds ( on ) C m inimizes p ower l osses ? low qg C m inimizes s witching l osses ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: to252 (dpak) ? case m aterial: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h40 04 s k3 q - 13 to252 (dpak) 2 , 5 00/tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. r efer to http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information internal schematic top view pin out top view to252 (dpak) t4004s yyww =manufacturer s marking t4004s = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) d s g g s d d e3 green
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 2 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q maximum ratings ( @ t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 4 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) t c = +25c (note 10 ) i d 100 a t c = + 10 0c 10 0 maximum body diode forward current (note 7 ) i s 10 0 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 1 6 0 a avalanche current, l=0.2mh i as 4 0 a avalanche energy, l=0. 2 mh e as 16 0 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) t a = +25c p d 3. 9 w thermal resistance, junction to ambient (note 6 ) r ? ja 38 c/w total power dissipation (note 7 ) t c = +25c p d 18 0 w thermal resistance, junction to case (note 7 ) r ? j c 0.8 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 4 0 ? ? gs = 0v, i d = 1m a zero gate voltage drain current i dss ? ? ds = 32 v, v gs = 0v gate - source leakage i gss ? ? gs = 2 0 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 2 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? gs = 10 v, i d = 90 a diode forward voltage v sd ? gs = 0v, i s = 20 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 25 v, v gs = 0v , f = 1 mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? ? ds = 20 v, i d = 90 a , v gs = 10 v gate - source charge q gs ? ? gd ? ? d( on ) ? ? dd = 20 v, v gs = 10 v, i d = 90 a , r g = 3.5 r ? ? d( off ) ? ? f ? ? ? ? rr ? ? f = 50 a , d i /d t = 100a/ rr ? ? ? ? notes: 6 . device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single - sided 1.6mm fr - 4 pcb; device is measured under still air conditions whilst operating in a steady state. 7 . t hermal resistance from junction to solder point (on the exposed drain pin) . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing . 10 . package limited.
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 3 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q 0.0 30.0 60.0 90.0 120.0 150.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = 3.5v v gs = 4.0v v gs = 4.5v v gs = 10.0v v gs =5.0v v gs = 6.0v 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 10 30 50 70 90 110 130 150 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10.0v 0 3 6 9 12 15 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 100a 0 0.001 0.002 0.003 0.004 0.005 0.006 10 30 50 70 90 110 130 150 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature - 55 25 85 150 125 v gs = 10v 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 6. on - resistance variation with temperature v gs = 10v, i d = 90a 0 5 10 15 20 25 30 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55 25 85 125 150 175
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 4 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q 0 0.001 0.002 0.003 0.004 0.005 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ) t j , junction temperature ( gs = 10v, i d = 100a 0 30 60 90 120 150 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c t a = 175 o c 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs (v) q g (nc) figure 11. gate charge v ds = 20v, i d = 90a 0 0.5 1 1.5 2 2.5 3 3.5 4 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0.1 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) f igure 12. soa, safe operation area p w =10ms p w =100 s r ds(on) limited p w =1ms p w =100ms t j(max) = 175 t c = 25 single pulse dut on infinite heatsink v gs = 10v p w =1s p w =10 s
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 5 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 0.8
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 6 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 7 1 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm th4004sk3 q document number: ds 38660 rev. 1 - 2 7 of 7 www.diodes.com july 2016 ? diodes incorporated dm th4004sk3 q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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