april 2000 FQPF2N60 qfet qfet qfet qfet tm FQPF2N60 600v n-channel mosfet general description features 1.6a, 600v, r ds(on) = 4.7 ? @v gs = 10 v low gate charge ( typical 9.0 nc) low crss ( typical 5.0 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter FQPF2N60 units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 1.6 a - continuous (t c = 100c) 1.0 a i dm drain current - pulsed (note 1) 6.4 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 140 mj i ar avalanche current (note 1) 1.6 a e ar repetitive avalanche energy (note 1) 2.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 28 w - derate above 25c 0.22 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 4.46 c w r ja thermal resistance, junction-to-ambient -- 62.5 c w ! " ! ! ! " " " ! " ! ! ! " " " s d g to-220f fqpf series g s d these n-channel enhancement mode power field effect transistors are produced using corise semiconductor?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply.
FQPF2N60 (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 100mh, i as = 1.6a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 2.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.4 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 a v ds = 480 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.8 a -- 3.7 4.7 ? g fs forward transconductance v ds = 50 v, i d = 0.8 a -- 2.0 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 270 350 pf c oss output capacitance -- 40 50 pf c rss reverse transfer capacitance -- 5 7 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 2.4 a, r g = 25 ? -- 10 30 ns t r turn-on rise time -- 25 60 ns t d(off) turn-off delay time -- 20 50 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = 480 v, i d = 2.4 a, v gs = 10 v -- 9.0 11 nc q gs gate-source charge -- 1.6 -- nc q gd gate-drain charge -- 4.3 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 1.6 a i sm maximum pulsed drain-source diode forward current -- -- 6.4 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.6 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 2.4 a, di f / dt = 100 a/ s -- 180 -- ns q rr reverse recovery charge -- 0.72 -- c
FQPF2N60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 246810 10 -1 10 0 notes : 1. v ds = 50v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0246810 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 2.4a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0123456 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
FQPF2N60 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 4.46 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 1.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
FQPF2N60 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p
FQPF2N60 dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FQPF2N60 (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f
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