features 1 of 5 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems sga9189z medium power discrete sige transistor rfmd?s sga9189z is a high performance transistor designed for operation to 3ghz. with optimal matching at 2ghz, oip3 = 39dbm, and p1db = 25.5dbm. this rf device is based on a silicon germaniu m heterostructure bipolar transistor (sige hbt) process. the sga9189z is cost-effective for applications requiring high linear- ity even at moderate biasing levels. it is well suited for operation at both 5v and 3v. the matte tin finish on the lead-free pack age utilizes a post annealing process to mitigate tin whisker formation and is rohs compliant per eu directive 2002/95. this package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. 5 7 9 11 13 15 17 19 21 23 25 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 24 26 28 30 32 34 36 38 40 42 44 typical gmax, oip3, p1db @ 5v,180ma frequency (ghz) gmax (db) oip3, p1db (dbm) gmax oip3 p1db ? 50mhz to 3000mhz operation ? 39dbm output ip3 typ. at 1.96ghz ? 12.2db gain typ. at 1.96ghz ? 25.5dbm p1db typ. at 1.96ghz ? 2.1db nf typ. at 0.9ghz ? cost-effective ? 3v to 5v operation applications ? wireless infrastructure driver amplifiers ? catv amplifiers ? wireless data, wll amplifiers ? an-021 contains detailed appli- cation circuits ds121018 ? package: sot-89 sga9189z medium power discrete sige transistor parameter specification unit condition min. typ. max. maximum available gain 20.5 db 900mhz, z s = z s *, z l = z l * 13.2 db 1960mhz power gain 17.5 19.0 20.5 db 900mhz [1], z s = z sopt , z l = z lopt 11.2 12.2 13.2 db 1960mhz [2] output power at 1db compression 40 dbm 900mhz, z s = z sopt , z l = z lopt 23.5 25.5 dbm 1960mhz [2] output third order intercept point 40.0 dbm 900mhz, z s = z sopt , z l = z lopt, p out = +10dbm per tone 36.5 39.0 dbm 1960mhz [2] noise figure 2.1 db 900mhz, z s = z sopt , z l = z lopt 2.6 db 1960mhz dc current gain 100 180 300 breakdown voltage 7.5 8.5 v collector - emitter thermal resistance 47 c/w junction - lead device operating voltage 5.5 v collector - emitter operating current 155 180 195 ma test conditions: v ce = 5v, i cq = 180ma (unless otherwise noted), t l = 25c. [1] 100% tested [2] sample tested
2 of 5 ds121018 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga9189z typical performance with engineering application circuit typical performance with engineering application circuit data above represents typical performance of the application ci rcuits notes in application note an-021. refer to the applica- tion note for additional rf data, pcb layo uts, and boms for each application circuit. the application note also includes biasin g instructions and other key issues to be considered. for the late st application notes please visi t our site at wwww.rfmd.com or call your local sales representative. absolute maximum ratings parameter rating unit max base current (ib) 5 ma max device current (ice) 200 ma max collector-emitter voltage (vceo) 7 v max collector-base voltage (vcbo) 20 v max emitter-base voltage (vebo) 4.8 v max junction temp (tj) +150 c operating temp range (tl) see graph max storage temp +150 c *note: load condition1, z l = 50 ? . operation of this device beyond any one of these limits may ca use permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l )/r th , j - l and t l = t lead freq (mhz) vce (v) icq (ma) p1db (dbm) oip3 1 (dbm) gain (db) s11 (db) s22 (db) nf (db) zsopt ( ? ) zlopt ( ? ) 945 5 184 25.8 39.5 18.8 -14 -26 2.1 6.8 -j0.85 16 + j5.9 1960 5 179 25.5 40.0 12.2 -23 -21 2.4 7.6 - j11.2 22.8 + j0.7 2140 5 180 25.4 39.0 11.3 -20 -14 2.6 18.1 + j3.4 23.8 - j9.0 2440 5 180 25.4 40.0 10.2 -20 -17 2.7 5.6 - j15.1 23.1 - j2.7 1 p out = +10dbm per tone for v ce = 5v, 1mhz tone spacing freq (mhz) vce (v) icq (ma) p1db (dbm) oip3 2 (dbm) gain (db) s11 (db) s22 (db) nf (db) zsopt ( ? ) zlopt ( ? ) 945 3 165 22.1 34.3 17.7 -18 -11 2.1 9.6 - j1.6 11.0 + j1.4 1960 3 162 22.4 35.0 11.8 -18 -16 2.2 7.8 - j13.1 19.3 - j2.9 2440 3 165 23.2 35.3 9.9 -20 -15 2.6 8.1 - j16.0 21.0 - j6.5 2 p out = +6dbm per tone for v ce = 3v, 1mhz tone spacing caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. maximum recommended operational dissipated power 0.00 0.20 0.40 0.60 0.80 1.00 1.20 -40 -10 20 50 80 110 140 lead temperature (c) total dissipated power (w ) operational limit (tj<130c) z sopt e b c z lopt
3 of 5 ds121018 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga9189z de-embedded s-parameters (z s = z l = 50 ? , v ce = 5v, i cq = 185ma, 25c) 0 50 100 150 200 250 300 350 400 02468 dc-iv curves v ce (v) i c (ma) i b = 0.4 - 3.6 ma , 0.4 ma steps t=25c note: s-parameters are de-embedded to the device leads with z s =z l =50 . the data represents typical performace of the device. de-embedded s-parameters can be downloaded from our website (www.sirenza.com). -10 -5 0 5 10 15 20 25 30 012345678 -5 5 15 25 35 45 012345678 -45 -35 -25 -15 -5 5 frequency (ghz) gain (db) isolation (db) gain gmax isolation gain vs. temp (db) frequency (ghz) t = -40, 25, 85 c insertion gain & isolation insertion gain vs temperature s11 vs frequency s22 vs frequency 0.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0 4 ghz s11 5 ghz 1 ghz 50 mhz 8 ghz 3 ghz 2 ghz 0.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 inf 0.2 0.5 1.0 2.0 5.0 4 ghz 5 ghz 1 ghz 50 mhz 8 ghz 3 ghz 2 ghz s22
4 of 5 ds121018 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga9189z recommended mounting configurat ion for optimum rf and thermal performance mounting and thermal considerations it is very important that adequate heat si nking be provided to minimize the device junction temperature. the following items should be implemented to maximize mttf and rf performance. 1. multiple solder-filled vias are required di rectly below the ground tab (pin 4). [critical] 2. incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [critical] 3. use two point board seating to lower the thermal resistance between the pcb and mounting plate. place machine screws as close to the ground tab (pin 4) as possible. [recommended] 4. use 2 ounce copper to improve the pcb?s heat spreading capability. [recommended] pin names and descriptions pin name description 1base rf input. 2emitter connection to ground. use via holes to reduce lead inductance. place vias as close to ground leads as possible. 3 collector rf output. 4emitter same as pin 2. sot-89 package machine screws plated thru holes (0.020" dia) ground plane
5 of 5 ds121018 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga9189z package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. part identification ordering information part number description sga9189z 13? reel with 3000 pieces sga9189zsq sample bag with 25 pieces sga9189zsr 7? reel with 100 pieces sga9189z-evb1 870mhz to 960mhz, 8v operation pcba SGA9189Z-EVB2 1930mhz to 1990mhz, 8v operation pcba sga9189z-evb3 2110mhz to 2170mhz, 8v operation pcba sga9189z-evb4 2400mhz to 2500mhz, 8v operation pcba p1 .016 .118 .019 .096 .041 .177 .068 .059 .015 .161 4 3 2 1
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