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| BSC0921NDI dual n-channel optimos? mosfet features ? dual n-channel optimos? mosfet ? optimized for high performance buck converter ? logic level (4.5v rated) ? n-channel ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified 2) parameter symbol conditions unit q1 q2 continuous drain current i d t c =70?c, v gs =10v 40 40 a t a =25?c, v gs =4.5v 3) 17 31 t a =70?c, v gs =4.5v 3) 14 25 t a =25?c, v gs =10v 4) 11 19 pulsed drain current 5) i d,pulse t c =70?c 160 160 avalanche energy, single pulse e as q1: i d =20?a, q2: i d =20?a, r gs =25? w 12 60 mj gate source voltage v gs v power dissipation p tot t a =25?c 2) 2.5 2.5 w t a =25 c, minimum footprint 3) 1.0 1.0 operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 4) device mounted on a minimum pad (one layer, 70 m thick). one transistor active 5) see figure 3 for more detailed information. value -55 ... 150 55/150/56 20 1) j-std20 and jesd22 2) one transistor active 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. type package marking BSC0921NDI pg - tison - 8 0921ndi q1 q2 v ds 30 30 v r ds(on),max v gs =10 v 5 1.6 m w v gs =4.5 v 7 2.1 i d 40 40 a product summary vphase rev.2.0 page 1 2013-07-30
BSC0921NDI parameter symbol conditions unit min. typ. max. thermal characteristics q1 r thjc - - 4.5 k/w q2 - - 1.7 q1 r thja q2 q1 q2 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage q1 q2 q1 q2 gate threshold voltage q1 q2 zero gate voltage drain current q1 i dss - - 1 a q2 - - 500 q1 - - 0.1 ma q2 - 3 - gate-source leakage current q1 i gss q2 q1 r ds(on) - 5.8 7.0 m w q2 - 1.7 2.1 q1 - 3.9 5.0 q2 - 1.2 1.6 gate resistance q1 r g 0.4 0.7 1.4 w q2 0.3 0.5 1.0 transconductance q1 g fs 38 75 - s q2 70 140 - - - 2 1.2 - 30 - v gs(th) breakdown voltage temperature coefficient i d =10?ma, referenced to 25?c v v gs =4.5?v, i d =20?a v gs =10?v, i d =20?a | v ds |>2| i d | r ds(on)max , i d =20?a v ds =24?v, v gs =0?v, t j =25?c v ds =24?v, v gs =0?v, t j =150?c v 15 - mv/k d v (br)dss /d t j 100 values drain-source on-state resistance thermal resistance, junction - ambient 1) 6 cm 2 cooling area 2) na - v gs =20?v, v ds =0?v - thermal resistance, junction - case v ds = v gs , i d =250?a minimal footprint, steady state 3) v (br)dss v gs =0?v, i d =10?ma - 50 125 - - - rev.2.0 page 2 2013-07-30 BSC0921NDI parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance q1 c iss - 770 1025 pf q2 - 2700 3590 output capacitance q1 c oss - 300 399 q2 - 1100 1463 reverse transfer capacitance q1 c rss - 44 - q2 - 150 - turn-on delay time q1 t d(on) - 1.8 ns q2 - 5 - rise time q1 t r - 3.4 - q2 - 5.0 - turn-off delay time q1 t d(off) - 12 - q2 - 25 - fall time q1 t f - 2.4 - q2 - 3.6 - gate charge characteristics gate to source charge q1 q gs - 2.2 2.9 nc gate to drain charge q gd - 1.9 2.5 gate charge total q g - 5.9 8.9 gate plateau voltage v plateau - 2.8 - v gate to source charge q2 q gs - 6.7 8.9 nc gate to drain charge q gd - 7.0 9.1 gate charge total q g 22 33 gate plateau voltage v plateau - 2.5 - v output charge q1 q oss - 8 11 nc q2 - 30 40 v dd =15?v, v gs =0?v values v gs =0?v, v ds = 15?v, f =1?mhz v dd =15?v, v gs =10?v, r g =1.6? w , i d =20?a v dd =15?v, i d =20?a, v gs =0?to 4.5?v rev.2.0 page 3 2013-07-30 BSC0921NDI parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current q1 i s - - 28 a q2 40 diode pulse current q1 i s,pulse - - 160 q2 - - 160 diode forward voltage q1 v sd v gs =0?v, i f =20?a, t j =25?c - 0.9 1 v q2 v gs =0?v, i f =8?a, t j =25?c - 0.56 0.7 reverse recovery charge q1 q rr - 5 - nc q2 - 5 - nc values t c =25?c v r =15 v, i f = i s , d i f /d t =100 a/s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 3) device mounted on a minimum pad (one layer, 70 m thick) rev.2.0 page 4 2013-07-30 BSC0921NDI 1 power dissipation (q1) 2 power dissipation (q2) p tot =f( t a ) 3) p tot =f( t a ) 3) 3 drain current (q1) 4 drain current (q2) i d =f( t c ) i d =f( t c ) parameter: v gs 10 v parameter: v gs 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 0 40 80 120 160 i d [a] t c [ c] 0 0.2 0.4 0.6 0.8 1 1.2 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 0 40 80 120 160 i d [a] t c [ c] rev.2.0 page 5 2013-07-30 BSC0921NDI 5 safe operating area (q1) 6 safe operating area (q2) i d =f( v ds ); t c =25 c; d =0 i d =f( v ds ); t c =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (q1) 8 max. transient thermal impedance (q2) z thjc =f( t p ) z thjc =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 2 10 - 1 10 0 10 1 z thjc [k/w] t p [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev.2.0 page 6 2013-07-30 BSC0921NDI 9 typ. output characteristics (q1) 10 typ. output characteristics (q2) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (q1) 12 typ. drain-source on resistance (q2) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 100 200 300 400 0 1 2 3 i d [a] v ds [v] 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 40 80 120 160 0 1 2 3 i d [a] v ds [v] 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 r ds(on) [m w ] i d [a] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 3 6 9 12 15 0 20 40 60 80 r ds(on) [m w ] i d [a] rev.2.0 page 7 2013-07-30 BSC0921NDI 13 typ. transfer characteristics (q1) 14 typ. transfer characteristics (q2) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (q1) 16 drain-source on-state resistance (q2) r ds(on) =f( t j ); i d =20 a; v gs =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] typ 0 1 2 3 4 5 6 7 8 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] t j [ c] typ 0 0.5 1 1.5 2 2.5 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] t j [ c] rev.2.0 page 8 2013-07-30 BSC0921NDI 17 typ. gate threshold voltage (q1) 18 typ. gate threshold voltage (q2) v gs(th) =f( t j ); v gs = v ds ; i d =250 a v gs(th) =f( t j ); v gs = v ds ; i d =10 ma 19 typ. capacitances (q1) 20 typ. capacitances (q2) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 1 10 2 10 3 10 4 0 10 20 30 c [pf] v ds [v] ciss coss crss 10 1 10 2 10 3 10 4 0 10 20 30 c [pf] v ds [v] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 - 60 - 20 20 60 100 140 180 v gs(th) [v] t j [ c] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 - 60 - 20 20 60 100 140 180 v gs(th) [v] t j [ c] rev.2.0 page 9 2013-07-30 BSC0921NDI 21 forward characteristics of reverse diode (q1) 22 forward characteristics of reverse diode (q2) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (q1) 24 avalanche characteristics (q2) i as =f( t av ); r gs =25 w i as =f( t av ); r gs =25 w parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 150 c 10 - 1 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 i f [a] v sd [v] - 55 c 25 c 100 c 150 c 10 - 1 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 i f [a] v sd [v] rev.2.0 page 10 2013-07-30 BSC0921NDI 25 typ. gate charge (q1) 26 typ. gate charge (q2) v gs =f( q gate ); i d =20 a pulsed v gs =f( q gate ); i d =20 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (q1) 28 typ. drain-source leakage current (q2) v br(dss) =f( t j ); i d =1 ma i dss =f( v ds ); v gs =0 v parameter: t j 25 26 27 28 29 30 31 32 33 34 35 - 60 - 20 20 60 100 140 180 v br(dss) [v] t j [ c] 25 c 75 c 100 c 125 c 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 0 5 10 15 20 25 i dss [a] v dsj [v] 6 v 15 v 24 v 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v gs [v] q gate [nc] 6 v 15 v 24 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs [v] q gate [nc] rev.2.0 page 11 2013-07-30 BSC0921NDI pg-tison rev.2.0 page 12 2013-07-30 BSC0921NDI pg-tison rev.2.0 page 13 2013-07-30 BSC0921NDI published by infineon technologies ag 81726 munich, germany ? 2012 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev.2.0 page 14 2013-07-30 |
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