? 2000 ixys all rights reserved 1 - 2 v dss = 200 v i d25 = 45 a r ds(on) = 45 m symbol conditions maximum ratings v dss t j = 25c to 150c 200 v v dgr t j = 25c to 150c; r gs = 10 k 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 45 a i d80 t c = 80c 34 a i dm t c = 25c, t p = 10 s, pulse width limited by t jm 180 a p tot t c = 25c 190 w t j -40 ... +150 c t jm 150 c t stg -40 ... +125 c v isol 50/60 hz t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque(m5 or 10-32 unf) 2.5-4.0/22-35 nm/lb.in. terminal connection torque (m5) 2.5-4.0/22-35 nm/lb.in. weight typical including screws 90 g phaseleg configuration high dv/dt, low t rr , hdmos tm family features two mosfet's in phaseleg config. international standard package direct copper bonded al 2 o 3 ceramic base plate isolation voltage 3600 v~ low r ds(on) hdmos tm process applications switched-mode and resonant-mode power supplies uninterruptible power supplies (ups) advantages easy to mount with two screws space and weight savings high power density low losses preliminary data dual power hiperfet tm module 6 5 3 2 1 4 vmm 45-02f 1 = drain 1 2 = source 1 , drain 2 3 = source 2 4 = kelvin source 1 5 = gate 1 6 = gate 2 to-240 aa 6 4 5 3 2 1 symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 200 v v gs(th) v ds = v gs , i d = 4 ma 2 4 v i gss v gs = 20 v dc, v ds = 0 500 na i dss v ds = v dss ,v gs = 0 v, t j = 25c 15 a v ds = 0.8 v dss ,v gs = 0 v, t j = 125c 1 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 39 45 m pulse test, t 300 s, duty cycle d 2% data per mosfet unless otherwise stated. 948
? 2000 ixys all rights reserved 2 - 2 vmm 45-02f symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 pulsed 20 30 s c iss 4800 7500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 900 2250 pf c rss 310 750 pf t d(on) 40 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 45 ns t d(off) r g = 1 (external), resistive load 300 ns t f 45 ns q g 190 225 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 35 55 nc q gd 95 115 nc r thjc 0.63 k/w r thch heatsink compound applied 0.3 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a allowable acceleration 50 m/s 2 source-drain diode characteristic values (t j = 25c, unless otherwise specified) symbol conditions min. typ. max. i s v gs = 0 v 45 a i sm repetitive; pulse width limited by t jm 180 a v sd i f = i s ; v gs = 0 v, 0.9 1.2 v pulse test, t 300 s, duty cycle d 2% t rr i f = i s , -di/dt = 100 a/s, 200 400 ns v ds = 100 v, v gs = 0 v dimensions in mm (1 mm = 0.0394")
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