 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page rfm110w / rfm117w 1/21 features ? embedded eeprom y very easy development with rfpdk y all features programmable ? frequency range: y 240 to 480 mhz (rfm110w) y 240 to 960 mhz (rfm117w) ? ook modulation ? symbol rate: 0.5 to 30 ksps ? output power: -10 to +13 dbm ? supply voltage: 1.8 to 3.6 v ? current consumption: 12.4 ma @ +10 dbm ? sleep current: < 20 na ? fcc / etsi compliant ? rohs compliant ? module size:17.8*12.8*5.0mm rfm110w/rfm117w descriptions the rfm110w/rfm117w devices are ultra low-cost, highly flexible, high performance, single-chip ook transmitters for various 240 to 960 mhz wireless applications. the rfm110wa co vers the frequency range from 240 to 480 mhz while the rfm117w covers the 240 to 960 mhz frequency range. they are part of the cmostek nextgenrf tm family, which includes a complete line of transmitters, receivers and transceivers. with very low current consumption, the device modulates and transmits the data which is sent from the host mcu. an embedded eeprom allows the frequency, output power and other features to be programmed into the chip using the stock products of 433.92/868.35 mhz are available for immediate demands without the need of eeprom programming.the rfm110w/rfm117w transmitter together with the rfm21x receiver enables an ultra low cost rf link. applications ? low-cost consumer electronics applications ? home and building automation ? remote fan controllers ? infrared transmitter replacements ? industrial monitoring and controls ? remote lighting control ? wireless alarm and security systems ? remote keyless entry (rke) ? ?
e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 2/21 abbreviations abbreviations used in this data sheet are described below an application notes pa power amplifier bom bill of materials pc personal computer bsc basic spacing between centers pcb printed circuit board eeprom electrically erasable programmable read-only memory pn phase noise rclk reference clock esd electro-static discharge rf radio frequency esr equivalent series resistance rfpdk rf product development kit etsi european telecommunications standards institute rohs restriction of hazardous substances rx receiving, receiver fcc federal communications commission sot small-outline transistor max maximum sr symbol rate mcu microcontroller unit twi two-wire interface min minimum tx transmission, transmitter moq minimum order quantity typ typical np0 negative-positive-zero usb universal serial bus obw occupied bandwidth xo/xosc crystal oscillator ook on-off keying xtal crystal ? e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 3/21 table of contents 1. electrical characteristics................................................................................................. ........................................... 4 1.1 recommended operating conditions ........................................................................................ ........................... 4 1.2 absolute maximum ratings................................................................................................. .................................. 4 1.3 transmitter specifications .............................................................................................. ....................................... 5 1.4 crystal oscillator ...................................................................................................... ............................................. 6 2. pin descriptions .......................................................................................................... ................................................ 7 3. typical performance characteristics........................................................................................ ................................. 8 4. typical application schematics ............................................................................................ ..................................... 9 5. functional descriptions.................................................................................................... ........................................ 10 5.1 overview ................................................................................................................ ............................................. 10 5.2 modulation, frequency and symbol rate ................................................................................... ........................ 10 5.3 embedded eeprom and rfpdk ............................................................................................... ....................... 11 5.4 power amplifier ......................................................................................................... .......................................... 12 5.5 pa ramping .............................................................................................................. .......................................... 12 5.6 crystal oscillator and rclk.............................................................................................. .................................. 13 6. working states and transmission control interface ......................................................................... .................... 14 6.1 working states........................................................................................................... ......................................... 14 6.2 transmission control interface .......................................................................................... ................................. 14 6.2.1 tx enabled by data pin rising edge..................................................................................... ................. 15 6.2.2 tx enabled by data pin falling edge ................................................................................... .................. 15 6.2.3 two-wire interface..................................................................................................... ............................... 15 7. ordering information....................................................................................................... .......................................... 19 8. package outline............................................................................................................ ............................................. 20 9. contact information ....................................................................................................... ............................................ 21 e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 4/21 1. electrical characteristics v dd = 3.3 v, t op = 25 , f rf = 433.92 mhz, output power is +10 dbm terminated in a matched 50 ? impedance, unless otherwise noted. 1.1 recommended operating conditions table 3. recommended operation conditions parameter symbol conditions min typ max unit operation voltage supply v dd 1.8 3.6 v operation temperature t op -40 85 supply voltage slew rate 1 mv/us 1.2 absolute maximum ratings table 4. absolute maximum ratings [1] parameter symbol conditions min max unit supply voltage v dd -0.3 3.6 v interface voltage v in -0.3 v dd + 0.3 v junction temperature t j -40 125 storage temperature t stg -50 150 soldering temperature t sdr lasts at least 30 seconds 255 esd rating human body model (hbm) -2 2 kv latch-up current @ 85 -100 100 ma note: [1]. stresses above those listed as ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device under these conditions is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. caution! esd sensitive device. precaution should be used when handling the device in order to prevent permanent damage. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 5/21 1.3 transmitter specifications table 5. transmitter specifications parameter symbol conditions min typ max unit frequency range [1] f rf rfm110w 240 480 mhz rfm117w 240 960 mhz synthesizer frequency resolution f res f rf 480 mhz 198 hz f rf > 480 mhz 398 hz maximum output power p out(max) +13 dbm minimum output power p out(min) -10 dbm output power step size p step 1 db pa ramping time [2] t ramp 0 1024 us current consumption @ 433.92 mhz i dd433.92 0 dbm, 50% duty cycle 6.7 ma +10 dbm, 50% duty cycle 13.4 ma +13 dbm, 50% duty cycle 17.4 ma current consumption @ 868.35 mhz i dd868.35 0 dbm, 50% duty cycle 8.0 ma +10 dbm, 50% duty cycle 15.5 ma +13 dbm, 50% duty cycle 19.9 ma sleep current i sleep 20 na symbol rate sr 0.5 30 ksps frequency tune time t tune 370 us phase noise @ 433.92 mhz pn 433.92 100 khz offset from f rf -81 dbc/hz 200 khz offset from f rf -83 dbc/hz 400 khz offset from f rf -92 dbc/hz 600 khz offset from f rf -97 dbc/hz 1.2 mhz offset from f rf -107 dbc/hz phase noise @ 868.35 mhz pn 868.35 100 khz offset from f rf -75 dbc/hz 200 khz offset from f rf -77 dbc/hz 400 khz offset from f rf -86 dbc/hz 600 khz offset from f rf -91 dbc/hz 1.2 mhz offset from f rf -101 dbc/hz harmonics output for 433.92 mhz [3] h2 433.92 2 nd harm @ 867.84 mhz, +13 dbm p out -52 dbm h3 433.92 3 rd harm @ 1301.76 mhz, +13 dbm p out -60 dbm harmonics output for 868.35 mhz [3] h2 868.35 2 nd harm @ 1736.7 mhz, +13 dbm p out -67 dbm h3 868.35 3 rd harm @ 2605.05 mhz, +13 dbm p out -55 dbm ook extinction ration 60 db notes: [1]. the frequency range is continuous over the specified range. [2]. 0 and 2 n us, n = 0 to 10, when set to ?0?, the pa output power will ramp to its configured value in the shortest possible time. [3]. the harmonics output is measured with the application shown as figure 10. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 6/21 1.4 crystal oscillator table 6. crystal oscillator specifications parameter ? symbol ? conditions ? min ? typ ? max ? unit ? crystal frequency [1] ? f xtal ? ? 26 ? 26 ? 26 ? mhz ? crystal tolerance [2] ? ?? ? 20 ? ? ppm ? load capacitance ? c load ? ? 10 ? 15 ? 20 ? pf ? crystal esr ? rm ? ? ?? 60 ? ? ? xtal startup time [3] ? t xtal ? ?? 400 ?? us ? drive level ? ??? ? 100 ? uw ? aging per year ? ??? 2 ? ? ppm ? notes: [1]. the rfm110w can directly work with external 26 mhz reference clock input to xin pin (a coupling capacitor is required)with peak-to-peak amplitude of 0.3 to 0.7 v. [2]. this is the total tolerance including (1) initial tolerance, (2) crystal loading, (3) aging, and (4) temperature dependence.the acceptable crystal tolerance depends on rf frequency and channel spacing/bandwidth. [3]. this parameter is to a large degree crystal dependent. ? e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 7/21 2. pin descriptions figure 2. pin diagram table 6. rfm110w pin descriptions pin number name i/o descriptions 1 ant o transmitter rf output 2 vdd i power supply 1.8v to 3.6v 3 data i/o data input to be transmitted or data pin to access the embedded eeprom 4 gnd i ground 5 nc --- connect to gnd 6 clk i clock pin to access the embedded eeprom 7 gnd i ground 8 nc --- connect to gnd e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 8/21 power (dbm) power (dbm) power (dbm) power (dbm) power (dbm) power (dbm) 3. typical performance characteristics phase noise 20 ? 13.2 dbm @ 433.92 mhz phase noise @ 868.35 mhz 15 ? 13.0 dbm @ 868.35 mhz 5 ? ? 0 ?? \ 5 ? ? \ 10 ? ? \ 15 ? ? \ 20 ? ? \ 25 ? ? \ 30 ? ? \ 35 ? ? \ 40 ? ? \ 50 ? ? -55.0 dbm @ 435.12 mhz \ 45 ? ? \ 55 ? ? -55.9 dbm @ 869.55 mhz \ 60 ? 432.42 ??? 432.72 ??? 433.02 ??? 433.32 ??? 433.62 ??? 433.92 ??? 434.22 ??? 434.52 ??? 434.82 ??? 435.12 ??? 435.42 ? frequency (mhz) rbw = 10 khz \ 65 ? 866.85 ?? 867.1 ?? 867.35 ?? 867.6 ?? 867.85 ?? 868.1 ?? 868.35 ?? 868.6 ?? 868.85 ?? 869.1 ?? 869.35 ?? 869.6 ?? 869.85 ? frequency (mhz) (rbw = 10 khz) figure 3. phase noise, f rf = 433.92 mhz, p out = +13 dbm, unmodulated figure 4. phase noise, f rf = 868.35 mhz, p out = +13 dbm, unmodulated ook spectrum, sr = 9.6 ksps 10 ? spectrum of various pa ramping options 10 ? ? 0 ? ? \ 10 ? ? \ 20 ? ? 0 ? ? ? ? ? \ 10 ? ? \ 20 ? ? 128 us 64 us 32 us 16 us 8 us 4 us \ 30 ? \ 30 ? ? \ 40 ? \ 40 ? ? \ 50 ? 433.18 ???????? 433.37 ???????? 433.55 ???????? 433.74 ???????? 433.92 ???????? 434.11 ???????? 434.29 ???????? 434.48 ???????? 434.66 ? frequency (mhz) \ 50 ? 433.17 ?? 433.37 ?? 433.57 ?? 433.77 ?? 433.97 ?? 434.17 ?? 434.37 ?? 434.57 ? frequency (mhz) figure 5. ook spectrum, sr = 9.6 ksps, p out = +10 dbm, t ramp = 32 us figure 6. spectrum of pa ramping, sr = 9.6 ksps, p out = +10 dbm spectrum of various pa ramping o pt ions 10 ? p out vs. v dd 14 ? ? 0 ? ? \ 10 ? ? ? ? ? \ 30 ? ? \ 40 ? 1024 ? us ? 512 ? us ? 256 ? us ? 128 ? us ? 64 ? us ? 32 ? us ? ? 12 ? ? sr = 1.2 ksps 10 ? ? 8 ? ? ? 4 ? ? 2 ? ? 0 ? ? ? ? ? ? 0 db m +10 db m +13 db m \ 50 ? 433.17 ?? 433.37 ?? 433.57 ?? 433.77 ?? 433.97 ?? 434.17 ?? 434.37 ?? 434.57 ? frequency (mhz) \ 2 ? 1.6 ?? 1.8 ?? 2 ?? 2.2 ?? 2.4 ?? 2.6 ?? 2.8 ?? 3 ?? 3.2 ?? 3.4 ?? 3.6 ?? 3.8 ? supply voltage v dd (v) figure 8. spectrum of pa ramping, sr = 1.2 ksps, p out = +10 dbm figure 7. output power vs. supply voltages, f rf = 433.92 mhz e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 9/21 4. typical application schematics figure 9: ? typical application schematic e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 10/21 ldos por bandgap 5. functional descriptions vdd gnd xtal xosc pfd/cp loop filter vco pa rfo fractional-n div eeprom ook modulator ramp control clk data interface and digital logic 5.1 overview figure 11. rfm110w/rfm117w functional block diagram the rfm110w/rfm117w is an ultra low-cost, highly flexible, high performance, single-chip ook transmitter for various 240 to 960 mhz wireless applications. the rfm110w covers the frequency range from 240 to 480 mhz while the cmt2117 covers the 240 to 960 mhz frequency range. they are part of the cmostek nextgenrf tm family, which includes a complete line of transmitters, receivers and transceivers. the chip is optimized for the low system cost, low power consumption, battery powered application with its highly integrated and low power design. the functional block diagram of the rfm110w/rfm117w is shown in the figure above. the rfm110w/rfm117w is based on direct synthesis of the rf frequency, and the frequency is generated by a low-noise fractional-n frequency synthesizer. it uses a 1-pin crystal oscillator circuit with the required crystal load capacitance integrated on-chip to minimize the number of extern al components. every analog block is calibrated on each power-on reset (por) to the highly accurate reference voltage internally. the calibration can help the chip to finely work under different temperatures and supply voltages. the rfm110w/rfm117w uses the data pin for the host mcu to send in the data. the input data will be modulated and sent out by a highly efficient pa which output power can be configured from -10 to +13 dbm in 1 db step size. rf frequency, pa output power and other product features can be programmed into the embedded eeprom by the rfpdk and usb programmer. this saves the cost and simplifies the product development and manufacturing effort. alternatively, in stock products of 433.92/868.35 mhz are available for immediate demands with no need of eeprom programming. the rfm110w/rfm117w operates from 1.8 to 3.6 v so that it can finely work with most batteries to their useful power limits. working under 3.3 v sup ply voltage when transmitting signal at +10 dbm power, it only consumes 13.4 ma at 433.92 mhz and 15.5 ma at 868.35 mhz. 5.2 modulation, freque ncy and symbol rate the rfm110w/rfm117w supports ook modulation with the symbol rate up to 30 ksps. the rfm110w covers the frequency range from 240 to 480 mhz, while the rfm117w covers the frequency range from 240 to 960 mhz, including the license free ism frequency band around 315 mhz, 433.92 mhz, 868.35 mhz and 915 mhz. the device contains a high spectrum purity low power fractional-n frequency synthesizer with output frequency resolution better than 198 hz when the frequency is lower than 480 mhz, and the frequency resolution is 397 hz when the frequency is higher than 480 mhz. see the table below for the e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 11/21 modulation, frequency and symbol rate specifications. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 12/21 table 10. modulation, frequency and symbol rate parameter value unit modulation ook - frequency (rfm110w) 240 to 480 mhz frequency (rfm117w) 240 to 960 mhz frequency resolution (f rf 480 mhz) 198 hz frequency resolution (f rf > 480 mhz) 397 hz symbol rate 0.5 to 30 ksps 5.3 embedded eeprom and rfpdk the rfpdk (rf products development kit) is a very user-friendly software tool delivered for the user configuring the rfm110w/rfm117w in the most intuitional way. the user only needs to fill in/select the proper value of each parameter and click the ?burn? button to complete the chip configuration. no register access and control is required in the application progr am. see the figure below for the accessing of the eeprom and table 11 for the summary of all the configurable parameters of the rfm110w/rfm117w in the rfpdk. rfm110w/rfm117w rfpdk eeprom interface clk data cmostek usb programmer figure 12. accessing embedded eeprom for more details of the cmostek usb programmer and the rfpdk, please refer to ?an103 cmt211xa-221xa one-way rf link development kits users guide?. for the detail of rfm110w/rfm117w configurations with the rfpdk, please refer to ?an102 rfm110w/rfm117w configuration guideline?. table 11. configurable parameters in rfpdk category parameters descriptions default mode rf settings frequency (rfm110w) to input a desired transmitting radio frequency in the range from 240 to 480 mhz. the step size is 0.001 mhz. 433.92 mhz basic advanced frequency (rfm117w) to input a desired transmitting radio frequency in the range from 240 to 960 mhz. the step size is 0.001 mhz. 868.35 mhz basic advanced tx power to select a proper transmitting output power from -10 dbm to +14 dbm, 1 dbm margin is given above +13 dbm. +13 dbm basic advanced xtal cload on-chip xosc load capacitance options: from 10 to 22 pf. 15 pf basic advanced pa ramping to control pa output power ramp up/down time, options are 0 and 2 n us (n from 0 to 10). 0 us advanced transmitting settings start by start condition of a transmitting cycle, by data pin rising/falling edge. data pin rising edge advanced stop by stop condition of a transmitting cycle, by data pin holding low for 20 to 90 ms. data pin holding low for 20 ms advanced e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 13/21 data rfo amplitude 5.4 power amplifier a highly efficient single-ended power amplifier (pa) is integrated in the rfm110w/rfm117w to transmit the modulated signal out. depending on the application, the user can design a matching network for the pa to exhibit optimum efficiency at the desired output power for a wide range of antennas, such as loop or monopole antenna. typical application schematics and the required bom are shown in ?chapter 4 typical application schematic?. for the schematic, layout guideline and the other detailed information please refer to ?an101 cmt211xa schematic and pcb layout design guideline?. the output power of the pa can be configured by the user within the range from -10 dbm to +13 dbm in 1 db step size using the cmostek usb programmer and rfpdk. 5.5 pa ramping when the pa is switched on or off quickly, its changing input impedance momentarily disturbs the vco output frequency. this process is called vco pulling, and it manifests as spectral splatter or spurs in the output spectrum around the desired carrier frequency. by gradually ramping the pa on and off, pa transient spurs are minimized. the rfm110w/rfm117w has built-in pa ramping configurability with options of 0, 1, 2, 4, 8, 16, 32, 64, 128, 256, 512 and 1024 us, as shown in figure 13. when the option is set to ?0?, the pa output power will ramp up to its configured value in the shortest possible time. the ramp down time is identical to the ramp up time in the same configuration. cmostek recommends that the maximum symbol rate should be no higher than 1/2 of the pa ramping ?rate?, as shown in the formula below: sr max 0.5 * ( 1 ) t ramp in which the pa ramping ?rate? is given by (1/t ramp ). in other words, by knowing the maximum symbol rate in the application, the pa ramping time can be calculated by: t ramp 0.5 * ( 1 ) sr max the user can select one of the values of the t ramp in the available options that meet the above requirement. if somehow the t ramp is set to be longer than ?0.5 * (1/sr max )?, it will possibly bring additional challenges to the ook demodulation of the rx device. for more detail of calculating t ramp , please refer to ?an102 rfm110w/rfm117w configuration guideline?. 0 us 1 us 2 us 4 us 8 us 512 us 1024 us time logic 1 logic 0 time figure 13. pa ramping time e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 14/21 5.6 crystal oscillator and rclk the rfm110w/rfm117w uses a 1-pin crystal oscillator circuit with the required crystal load capacitance integrated on-chip. figure 14 shows the configuration of the xtal circuitry and the crystal model. the recommended specification for the crystal is 26 mhz with 20 ppm, esr (rm) < 60 ? , load capacitance c load ranging from 12 to 20 pf. to save the external load capacitors, a set of variable load capacitors c l is built inside the rfm110w/rfm117w to support the oscillation of the crystal. the value of load capacitors is configurable with the cmostek usb programmer and rfpdk. to achieve the best performance, the user only needs to input the desired value of the xtal load capacitance c load of the crystal (can be found in the datasheet of the crystal) to the rfpdk, then finely tune the required xo load capacitance according to the actual xo frequency. please refer to ?an103 cmt211xa-221xa one-way rf link development kits users guide? for the method of choosing the right value of c l . crystal model xtal rfm110w/11 7 rclk 26 mhz cc xtal rfm110w/rfm117w rm 0. 3 ? 0. 7 vpp cm c0 c l c l lm figure 14. xtal circuitry and crystal model figure 15. rclk circuitry if a 26 mhz rclk (reference clock) is available in the system, the user can directly use it to drive the rfm110w/rfm117w by feeding the clock into the chip via the xtal pin. this further saves the system cost due to the removal of the crystal. a coupling capacitor is required if the rclk is used. the recommended amplitude of the rclk is 0.3 to 0.7 vpp on the xtal pin. also, the user should set the internal load capacitor c l to its minimum value. see figure 15 for the rclk circuitry. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 15/21 6. working states and tran smission control interface 6.1 working states the rfm110w/rfm117w has 4 different working states: sleep, xo-startup, tune and transmit. sleep when the rfm110w/rfm117w is in the sleep state, all the internal blocks are turned off and the current consumption is minimized to 20 na typically. xo-startup after detecting a valid control signal on data pin, the rfm110w/rfm117w goes into the xo-startup state, and the internal xo starts to work. the valid control signal can be a rising or falling e dge on the data pin, which can be configured on the rfpdk. the host mcu has to wait for the t xtal to allow the xo to get stable. the t xtal is to a large degree crystal dependent. a typical value of t xtal is provided in table 12. tune the frequency synthesizer will tune the rfm110w/rfm117w to the desired frequency in the time t tune . the pa can be turned on to transmit the incoming data only after the tune state is done, before that the incoming data will not be transmitted. see figure 16 and figure 17 for the details. transmit the rfm110w/rfm117w starts to modulate and transmit the data coming from the data pin. the transmission can be ended in 2 methods: firstly, driving the data pin low for t stop time, where the t stop can be configured from 20 to 90 ms on the rfpdk; secondly, issuing soft_rst command over the two-wire interface, this will stop the transmission in 1 ms. see section 6.2.3 for details of the two-wire interface. table 12. timing in different working states parameter symbol min typ max unit xtal startup time [1] t xtal 400 us time to tune to desired frequency t tune 370 us hold time after rising edge t hold 10 ns time to stop the transmission [2] t stop 20 90 ms notes: [1]. this parameter is to a large degree crystal dependent. [2]. configurable from 20 to 90 ms in 10 ms step size. 6.2 transmission control interface the rfm110w/rfm117w uses the data pin for the host mcu to send in data for modulation and transmission. the data pin can be used as pin for eeprom programming, data transmission, as well as controlling the transmission. the transmission can be started by detecting rising or falling edge on the data pin, and stopped by driving the data pin low for t stop as shown in the table above. besides communicating over the data pin, the host mcu can also communicate with the device over the two-wire interface, so that the transmission is more robust, and consumes less current. please note that the user is recommended to use the tx enabled by data pin rising edge, which is described in section 6.2.1. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 16/21 6.2.1 tx enabled by data pin rising edge as shown in the figure 16, once the rfm110w/rfm117w detects a rising edge on the data pin, it goes into the xo- startup state. the user has to pull the data pin high for at least 10 ns (t hold ) after detecting the rising edge, as well as wait for the sum of t xtal and t tune before sending any useful information (data to be transmitted) into the chip on the data pin. the logic state of the data pin is ?don't care? from the end of t hold till the end of t tune . in the transmit state, pa sends out the input data after they are modulated. the user has to pull the data pin low for t stop in order to end the transmission. state sleep xo-startup tune transmit sleep rising edge t xtal t tune t stop data pin 0 1 t hold don?t care valid transmitted data 0 pa out rf signals figure 16. transmission enabled by data pin rising edge 6.2.2 tx enabled by data pin falling edge as shown in the figure 17, once the rfm110w/rfm117w detects a falling edge on the data pin, it goes into xo-startup state and the xo starts to work. during the xo-startup state, the data pin needs to be pulled low. after the xo is settled, the rfm110w/rfm117w goes to the tune state. the logic state of the data pin is ?don't care? during the tune state. in the transmit state, pa sends out the input data after they ar e modulated. the user has to pull the data pin low for t stop in order to end the transmission. before starting the next transmit cycle, the user has to pull the data pin back to high. state sleep xo-startup tune transmit sleep falling edge t xtal t tune t stop data pin 1 0 don?t care valid transmitted data 0 1 pa out rf signals figure 17. transmission enabled by data pin falling edge 6.2.3 two-wire interface for power-saving and reliable transmission purposes, the rfm110w/rfm117w is recommended to communicate with the host mcu over a two-wire interface (twi): data and clk. the twi is designed to operate at a maximum of 1 mhz. the timing requirement and data transmission control through the twi are shown in this section. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 17/21 table 13. twi requirements parameter symbol conditions min typ max unit digital input level high v ih 0.8 v dd digital input level low v il 0.2 v dd clk frequency f clk 10 1,000 khz clk high time t ch 500 ns clk low time t cl 500 ns clk delay time t cd clk delay time for the first falling edge of the twi_rst command, see figure 20 20 15,000 ns data delay time t dd the data delay time from the last clk rising edge of the twi command to the time data return to default state 15,000 ns data setup time t ds from data change to clk fa lling edge 20 ns data hold time t dh from clk falling edge to data change 200 ns clk data t ch t cl t ds t dh figure 18. two-wire interface timing diagram once the device is powered up, twi_rst and soft_rst should be issued to make sure the device works in sleep state robustly. on every transmission, twi_rst and twi_off should be issued before the transmission to make sure the twi circuit functions correctly. twi_rst and soft_rst should be issued again after the transmission for the device going back to sleep state reliably till the next transmission. the operation flow with twi is shown as the figure below. reset ? twi ? one ? transmission ? cycle ? one ? transmission ? cycle ? ? ? ? (1) ?\? twi_rst ? (2) ?\? soft_rst ? (1) ?\? twi_rst ? (2) ?\? twi_off ? ? transmission ? (1) ?\? twi_rst ? (2) ?\? soft_rst ? (1) ?\? twi_rst ? (2) ?\? twi_off ? ? transmission ? (1) ?\? twi_rst ? (2) ?\? soft_rst ? ? figure 19. rfm110w/rfm117w operation flow with twi e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 18/21 table 14. twi commands descriptions command descriptions implemented by pulling the data pin low for 32 clock cycles and clocking in 0x8d00, 48 clock cycles in total. it only resets the twi circuit to make sure it functions correctly. the data pin cannot detect the rising/falling edge to trigger transmission after this command, until the twi_off command is issued. twi_rst notes: 1. please ensure the data pin is firmly pulled low during the first 32 clock cycles. 2. when the device is configured as transmission enabled by data pin falling edge, in order to issue the twi_rst command correctly, the first falling edge of the clk should be sent t cd after the data falling edge, which should be longer than the minimum data setup time 20 ns, and shorter than 15 us, e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 19/21 command descriptions as shown in figure 20. 3. when the device is configured as transmission enabled by data pin rising edge, the default state of the data is low, there is no t cd requirement, as shown in figure 21. twi_off implemented by clocking in 0x8d02, 16 clock cycles in total. it turns off the twi circuit, and the data pin is able to detect the rising/falling edge to trigger transmission after this command, till the twi_rst command is issued. the command is shown as figure 22. soft_rst implemented by clocking in 0xbd01, 16 clock cycles in total. it resets all the other circuits of the chip except the twi circuit. this command will trigger internal calibration for getting the optimal device performance. after issuing the soft_rst command, the host mcu should wait 1 ms before sending in any new command. after that, the device goes to sleep state. the command is shown as figure 23. 32 ? clock ? cycles ? 16 ? clock ? cycles ? ? clk ? ? ? t cd t dd data ? 1 ? 0 ? ? 0x8d00 ? 1 ? ? ? figure 20. twi_rst command when transmission enabled by data pin falling edge 32 ? clock ? cycles ? 16 ? clock ? cycles ? ? clk ?? ? ? data ?? 0 ? 0x8d00 ?? 0 ? ? figure 21. twi_rst command when transmission enabled by data pin rising edge 16 ? clock ? cycles ? 16 ? clock ? cycles ? ? clk ? ? ? data ? ? 0x8d02 ? (twi_off) ? ? t dd default ? state ? clk ? ? ? data ? ? ? 0xbd01 ? (soft_rst) ? ? t dd default ? state ? ? ? figure 22. twi_off command figure 23. soft_rst command the data is generated by the host mcu on the rising edge of clk, and is sampled by the device on the fa lling edge. the clk should be pulled up by the host mcu during the transmission shown in figure 19. the transmission process should refer to figure 16 or figure 17 for its timing requirement, depending on the ?start by? setting configured on the rfpdk. the device will go to sleep state by driving the data low for t stop , or issuing soft_rst command. a helpful practice for the device to go to sleep is to issue twi_rst and soft_rst commands right after the useful data is transmitted, instead of waiting the t stop , this can save power significantly. e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 20/21 7. ordering information rfm110w-433 s1 package operation band mode type p/n: rfm110w-315s1 rfm110w module at 315m hz band,smd package p/n: RFM110W-433S1 rfm110w module at 433m hz band,smd package p/n: rfm117w-868s1 rfm117w module at 868m hz band,smd package p/n: rfm117w-915s1 rfm117w module at 915m hz band,smd package e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 21/21 8. package outline ? ? figure 18 ??? s1 ? package ? outline ? drawing e \ mail:sales@hoperf.com ???????? website://www.hoperf.com ????????????????????? ??????????????? rev 1.0 | page ? rfm110w / rfm117w 22/21 9. contact information hope microelectronics co.,ltd add: ? 2/ f, ? building ? 3, ? pingshan ? private ? enterprise ? science ? and ? technology ? park, ? lishan ? road, ? xili ? town, ? nanshan ? district, ? shenzhen, ? guangdong, ? china tel: 86-755-82973805 fax: 86-755-82973550 email: sales@hoperf.com website: http://www.hoperf.com http://www.hoperf.cn hope microelectronics co.,ltd add: ? 2/ f, ? building ? 3, ? pingshan ? private ? enterprise ? science ? and ? technology ? park, ? lishan ? road, ? xili ? town, ? nanshan ? district, ? shenzhen, ? guangdong, ? china tel: 86-755-82973805 fax: 86-755-82973550 email: sales@hoperf.com website: http://www.hoperf.com http://www.hoperf.cn this document may contain prelimi nary information and is subject to change by hope microelectronics wit hout notice. hope microelectronics assumes no responsibility or liability for any use of the information contained herein. nothing in this doc ument shall operate as an express or implied license or indemnity under t he intellectual property rights of hope microelectronics or third parties. t he products described in this document are not intended for use in implantation or other direct life support applications where malfunction may result in the direct physical harm or injury to persons. no warranties of any kind, including, but not limited to, the implied warranties of mechantability or fitness for a articular purpose, are offered in this document. ?2006, hope microelectronics co.,ltd. all rights reserved. |
Price & Availability of RFM110W-433S1
 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
