http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst8205s 6.0a , 20v , r ds(on) 28 m ?? n-ch enhancement mode power mosfet 07-aug-2014 rev. b page 1 of 4 b l f h c j d g k a e rohs compliant product a suffix of ?-c? specifies halogen and lead-free description the sst8205s provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. the sot-26 package is universally used for all commercial- industrial surface mount applications. features ? low on-resistance ? capable of 2.5v gate drive ? low drive current marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v t a =25c 6 continuous drain current 3 , v gs @4.5v t a =70c i d 4.8 a pulsed drain current 1 i dm 20 a power dissipation t a =25c p d 1.14 w linear derating factor 0.01 w / c operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 max. r ? ja 110 c / w sot-26 date code millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst8205s 6.0a , 20v , r ds(on) 28 m ?? n-ch enhancement mode power mosfet 07-aug-2014 rev. b page 2 of 4 electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250ua breakdown voltage temperature coefficient bv ds / t j - 0.03 - v/c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 0.5 - 1.5 v v ds =v gs , i d =250ua gate-body leakage current i gss - - 100 na v gs = 10v t j =25 c - - 1 v ds =16v, v gs =0 drain-source leakage current t j =70 c i dss - - 25 ua v ds =16v, v gs =0 - - 28 v gs =4.5v, i d =6a drain-source on-resistance 2 r ds(on) - - 38 m ? v gs =2.5v, i d =5.2a forward transconductance g fs - 20 - s v ds =10v, i d =6a dynamic total gate charge 2 q g - 23 - gate-source charge q gs - 4.5 - gate-drain (?miller?) charge q gd - 7 - nc v ds =20v, v gs =5v, i d =6a turn-on delay time 2 t d(on) - 30 - rise time t r - 70 - turn-off delay time t d(off) - 40 - fall time t f - 65 - ns v ds =10v, v gs =5v, r g =6 ? , r d =10 ? , i d =1a input capacitance c iss - 1035 - output capacitance c oss - 320 - reverse transfer capacitance c rss - 150 - pf v gs =0v v ds = 20v, f=1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1.7a, v gs =0v notes: 1. pulse width limited by max. junction temperature. 2. pulse width 300us, duty Q cycle 2% Q 3. surface mounted on 1 in 2 copper pad of fr4 board, t Q 5sec; 180c/w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst8205s 6.0a , 20v , r ds(on) 28 m ?? n-ch enhancement mode power mosfet 07-aug-2014 rev. b page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente sst8205s 6.0a , 20v , r ds(on) 28 m ?? n-ch enhancement mode power mosfet 07-aug-2014 rev. b page 4 of 4 characteristic curves
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