View BLV91SL_8660457.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet product speci?cation september 1988 discrete semiconductors blv91/sl uhf power transistor
september 1988 2 philips semiconductors product speci?cation uhf power transistor blv91/sl description npn silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 mhz band. features diffused emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see fig.6). the transistor has a 4-lead envelope with a ceramic cap (sot-172d). all leads are isolated from the mounting base. quick reference data rf performance in a common-emitter class-b circuit note 1. device mounted on a printed-circuit board (see fig.6). mode of operation t c v ce v f mhz p l w g p db h c % narrow band; cw t mb = 25 12.5 900 2 > 6.5 > 50 t a =25 (1) 12.5 900 1.5 > 6.5 > 50 t a =25 (1) 9.6 900 1.5 typ. 6.6 typ. 60 pin configuration fig.1 simplified outline. sot172d. handbook, halfpage 2 1 4 3 msb007 top view pinning - sot172d. pin description 1 emitter 2 base 3 collector 4 emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged.
september 1988 3 philips semiconductors product speci?cation uhf power transistor blv91/sl ratings limiting values in accordance with the absolute maximum system (iec 134) thermal resistance dissipation = 4.5 w note 1. device mounted on a printed-circuit board (see fig.6). collector-base voltage (open emitter) v cbo max. 36 v collector-emitter voltage (open base) v ceo max. 16 v emitter-base voltage (open collector) v ebo max. 3 v collector current dc or average i c ; i c(av) max. 0.4 a (peak value); f > 1 mhz i cm max. 1.2 a total power dissipation f > 1 mhz; t mb 90 cp tot(rf) max. 6 w storage temperature t stg - 65 to + 150 c operating junction temperature t j max. 200 c from junction to ambient (1) (f > 1 mhz) t a =25 cr th j-a (rf) max. 55 k/w from junction to mounting base t mb =25 c (f > 1 mhz) r th j-mb (rf) max. 15 k/w fig.2 power/temperature curve. i continuous rf operation (f > 1 mhz) ii short-time rf operation during mismatch (f > 1 mhz) handbook, halfpage 0 ii i 40 80 p tot(rf) (w) t mb ( c) 160 10 0 8 120 6 4 2 mda398
september 1988 4 philips semiconductors product speci?cation uhf power transistor blv91/sl characteristics t j =25 c unless otherwise speci?ed collector-base breakdown voltage open emitter; i c = 5 ma v (br)cbo > 36 v collector-emitter breakdown voltage open base; i c = 10 ma v (br)ceo > 16 v emitter-base breakdown voltage open collector; i e = 0.5 ma v (br)ebo > 3v collector cut-off current v be = 0; v ce =16v i ces < 2.5 ma second breakdown energy l = 25 mh; f = 50 hz; r be =10 w e sbr > 0.55 mj d.c. current gain i c = 0.3 a; v ce =10v h fe > 25 collector capacitance at f = 1 mhz i e = i e =0;v cb = 12.5 v c c typ. 3.5 pf feedback capacitance at f = 1 mhz i c = 0; v ce = 12.5 v c re typ. 2.0 pf collector-mounting base capacitance c c-mb typ. 0.5 pf fig.3 t j =25 c; typical values. handbook, halfpage 0 120 80 40 0 0.3 i c (a) h fe 0.6 1.2 0.9 mda399 v ce = 12.5 v 10 v fig.4 i e =i e = 0; f = 1 mhz; typical values. handbook, halfpage 08 c c (pf) v cb (v) 16 24 8 6 2 0 4 mda400
september 1988 5 philips semiconductors product speci?cation uhf power transistor blv91/sl application information rf performance in cw operation (common-emitter circuit; class-b): f = 900 mhz mode of operation v ce v p l w g p db h c % t c narrow band; cw 12.5 2 > 6.5 > 50 t mb =25 12.5 2 typ. 7.8 typ. 60 t mb =25 12.5 1.5 > 6.5 > 50 t a =25 (2) 9.6 1.5 typ. 6.6 typ. 60 t a =25 (2) fig.5 class-b test circuit at f = 900 mhz. handbook, full pagewidth mda401 t.u.t. c2 c5 l3 c1 l2 r1 l1 l6 l8 r2 c6 c7 l5 l9 l10 c11 c10 50 w 50 w + v cc c8 l7 c4 c9 c3
september 1988 6 philips semiconductors product speci?cation uhf power transistor blv91/sl list of components: notes 1. american technical ceramics capacitor type 100a or capacitor of same quality. 2. device mounted on a printed-circuit board (see fig.6). c1 = c11 = 33 pf multilayer ceramic chip capacitor c2 = c3 = c10 = 1.4 to 5.5 pf ?lm dielectric trimmer (cat. no. 2222 809 09001) c4 = c5 = 5.6 pf multilayer ceramic chip capacitor (1) c6 = 10 pf multilayer ceramic chip capacitor c7 = 330 pf multilayer ceramic chip capacitor c8 = 3.9 pf multilayer ceramic chip capacitor (1) c9 = 1.2 to 3.5 pf ?lm dielectric trimmer (cat. no. 2222 809 05001) l1 = l8 = ferroxcube wideband hf choke, grade 3b (cat. no. 4312 020 36642) l2 = 60 nh; 4 turns closely wound enamelled cu wire (0.4 mm); int. dia. 3 mm; leads 2 5 mm l3 = 50 w stripline (25.4 mm 2.4 mm) l4 = 50 w stripline (4.4 mm 2.4 mm) l5 = l6 = 34 w stripline (14.0 mm 4.0 mm) l7 = 280 nh; 15 turns closely wound enamelled cu wire (0.4 mm); int. dia. 3 mm; leads 2 5 mm l9 = 50 w stripline (24.8 mm 2.4 mm) l10 = 50 w stripline (30.5 mm 2.4 mm) r1 = r2 = 10 w 5%; 0.25 w metal ?lm resistor l3, l4, l5, l6, l9 and l10 are striplines on a double cu-clad printed-circuit board with p.t.f.e. ?bre-glass dielectric ( e r = 2.2); thickness 1 32 inch; thickness of copper-sheet 2 35 m m.
september 1988 7 philips semiconductors product speci?cation uhf power transistor blv91/sl fig.6 printed-circuit board and component lay-out for 900 mhz class-b test circuit. handbook, full pagewidth + v cc l4 l3 l5 l6 b c e e l9 l10 c11 c10 c8 c9 l8 r2 c6 r1 l1 l2 c7 l7 c4 c5 c3 c2 c1 140 mm 80 mm mda402 rivets m2 m2 copper straps the circuit and the components are on one side of the p.t.f.e. fibre-glass board; the other side is unetched copper serving as groundplane. earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane.
september 1988 8 philips semiconductors product speci?cation uhf power transistor blv91/sl fig.7 load power as a function of source power. f = 900 mhz; class-b operation; typical values. ?? t mb =25 c; v ce = 12.5 v; - - - - t a = 25 c; v ce = 12.5 v; - - - - t a =25 c; v ce = 9.6 v handbook, halfpage 0 200 400 p s (mw) p l (w) 800 4 3 1 0 2 600 mda403 fig.8 power gain and efficiency as a function of load power. f = 900 mhz; class-b operation; typical values. ?? t mb =25 c; v ce = 12.5 v; - - - - t a = 25 c; v ce = 12.5 v; - - - - t a =25 c; v ce = 9.6 v handbook, halfpage 01 p l (w) g p (db) 2 0 20 40 60 80 100 3 10 0 8 6 4 2 mda404 g p h c h c (%) ruggedness the device is capable to withstand a full load mismatch (vswr = 50; all phases) at p l = 1.5 w up to a supply voltage of 15.5 v at t a =25 c. device mounted on a printed-circuit board (see fig.6).
september 1988 9 philips semiconductors product speci?cation uhf power transistor blv91/sl fig.9 input impedance (series components). v ce = 12.5 v; p l = 2 w; f = 800 - 960 mhz; t mb =25 c; class-b operation; typical values. handbook, halfpage 800 850 900 z i ( w ) x i f (mhz) 1000 5 0 4 950 3 2 1 mda405 r i fig.10 load impedance (series components). v ce = 12.5 v; p l = 2 w; f = 800 - 960 mhz; t mb =25 c; class-b operation; typical values. handbook, halfpage 800 1000 20 10 12 14 16 18 840 r l x l 880 920 z l ( w ) f (mhz) 960 mda406 fig.11 power gain as a function of frequency. v ce = 12.5 v; p l = 2 w; f = 800 - 960 mhz; t mb =25 c; class-b operation; typical values. handbook, halfpage 800 850 900 g p (db) f (mhz) 1000 10 0 8 950 6 4 2 mda407
september 1988 10 philips semiconductors product speci?cation uhf power transistor blv91/sl package outline references outline version european projection issue date iec jedec eiaj sot172d 97-06-28 h b b 1 h 0 5 10 mm scale q a d d 1 c studless ceramic package; 4 leads sot172d 1 2 3 4 unit a mm d b 3.31 3.04 b 1 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 1.15 0.88 3.71 2.89 c d 1 h 26.17 24.63 inches 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 0.045 0.035 0.146 0.114 1.03 0.97 q dimensions (millimetre dimensions are derived from the original inch dimensions)
september 1988 11 philips semiconductors product speci?cation uhf power transistor blv91/sl definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

▲Up To Search▲

Price & Availability of BLV91SL

	To Download BLV91SL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .