8n60 1 / 9 may.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) i d (a) 600 1.2 @ v gs =10v 8 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <1.2? @ v gs =10v fast switching capability low gate charge lead free in compliance with eu rohs directive. green molding compound block diagram ordering information case: to-220,ito-220,to-262,to-263 package d g s parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 8 a continuous drain current i d 8 a pulsed drain current (note 2) i dm 32 a avalanche energy single pulsed (note 3) e as 230 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 ns power dissipation to-220/to-262/to-263 p d 142 w ito-220 48 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 7.1mh, i as = 8a, v dd = 50v, r g = 25 ?, starting t j = 25c 4. i sd 7.5a, di/dt 2 00a/s , v dd bv dss , starting t j = 25c part no. package packing dmt8n60-tu to-220 50pcs / tube dmf8n60-tu ito-220 50pcs / tube dmk8n60-tu to-262 50pcs / tube DMG8N60-TU to-263 50pcs / tube dmg8n60-tr to-263 800pcs / 13" reel
2 / 9 thermal data 8n60 600v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w junction to case to-220/to-262/to-263 jc 0.85 c/w i to-220 2.6 parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v =0v, i d =250 a 600 v drain-source leakage current i dss v ds =600v, v gs =0v 10 a gate- source leakage current forward i gss v g= 30v, v ds =0v 100 na reverse v gs =-30v, v ds =0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) ds v =v gs , i d =250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) 1.0 1.2 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 965 1255 pf output capacitance c oss pf 105 135 reverse transfer capacitance c rss 12 16 pf switching characteristics turn-on delay time t d( on ) 16.5 45 ns turn-on rise time t r ns 60.5 130 turn-off delay time t d( off ) 81 170 ns turn-off fall time t f 64.5 140 ns total gate charge q g 28 36 nc gate-source charge q gs nc 4.5 gate-drain charge q gd 12 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd 1.4 v maximum continuous drain-source diode forward current i s 8 a maximum pulsed drain-source diode forward current i sm 32 a reverse recovery time t rr v gs =0v, i s =8a, di f /dt = 100 a/ s (note 1) 365 ns reverse recovery charge q rr c 3.4 notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature. may.2015-rev.00 www.dyeec.com v dd =300v, i d =8a, r g =25 ? (note 1, 2) v ds =480v, i d =8a, v gs =10v (note 1, 2) gs v = 10v, i d = 4a gs v = 0v, i s = 8a
3 / 9 test circ uits and waveforms 600v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-d vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may.2015-rev.00 www.dyelec.com 8n60
4 / 9 test circuits and waveforms(cont.) 600v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms jan.2015-rev.0 0 www.sddydz.com may.2015-rev.00 www.dyelec.com 8n60
5 / 9 typical characteristics 600v n-channel power mosfet may.2015-rev.00 www.dyelec.com 8n60 10 1 10 0.1 1 drain-to-source voltage, v ds (v) drain current, i d (a) on-state characteristics 0.1 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 6 4 810 10 1 0.1 5.0v notes: 1. 250s pulsee est 2. t c =25c v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5 v bottorm:5.0v 100 notes: 1.. ds =40v 2. 250s pulse test 25 c 150 c 0 0 drain-source on-resistance, r ds(on) (ohm) drain current, i d (a) 5 1 2 4 5 6 on-resistance variation vs. drain 3 10 15 20 1 0.1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) body diode forward voltage vs. source current 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150 c 25 c notes: 1. v gs =0v 2. 250ss t st v gs =20v v gs =10v current and gate voltage t j =25c 1900 0 0.1 drain-sourcevoltage, v ds (v) capacitance (pf) 1700 500 11 0 1500 1300 capacitance characteristics (non-repetitive) 0 gate-source voltage, v gs (v) total gate charge, q g (nc) 5 15 25 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =480v 20 gate charge characteristics 700 c iss c oss c rss c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes: 1.. gs =0v 2. f = 1mhz 1100 900 300 100 30 i d =8a
typical characteristics 600v n-channel power mosfet 8n60 6 / 9 may.2015-rev.00 www.dyelec.com -100 drain-source breakdown voltage, bv dss (normalized) junction temperature, t j ( c ) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 note: 1.. gs =0v 2.. d =250a breakdown voltage variation vs. temperature -100 drain-source on-resistance, r ds(on) (normalized) junction temperature, t j ( c ) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 on-resistance junction temperature note: 1.. gs =10v 2.. d =4a 10 1 0.1 drain-source voltage, v ds (v) drain current, i d (a) 100 10 1 100s 1000 10ms dc maximum safe operating area drain current, i d (a) case temperature, t c ( c ) 75 100 0 125 5025 2 4 6 8 10 maximum drain current vs. case temperature notes: 1. t j =25c 2.. j =150c 3. singlee pulse 150 operation in this area is limited by r ds(on) 100 1ms 100s thermal response, jc (t) 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 square wave pulse duration, t 1 (sec) transient thermal response curve notes: 1. jc (t)) 0.85c/w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 d=0.2 d=0.1 d=0.05 0.02 0.01 singlengle e
7 / 9 600v n-channel power mosfet may.2015-rev.00 www.dyelec.com 8n60 t o - 220 mechanical drawing t o - 220 mechanical drawing it o-220 m echanical drawing
8n60 6 0 0v n-channel power mosfet 8 / 9 may,2015-rev.0 0 www.dyelec.com to-2 62 mechanical drawing to-2 63 mechanical drawing
9 / 9 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyi s terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 600v n-channel power mosfet mar.2015-rev.00 www.dy elec.com 8n60
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