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strong ir fet? irfb7787pbf irfs7787pbf IRFSL7787pbf hexfet ? power mosfet application ? brushed motor drive applications ? bldc motor drive applications ? battery powered circuits ? half - bridge and full - bridge topologies ? synchronous rectifier applications ? resonant mode power supplies ? or - ing and redundant power switches ? dc/dc and ac/dc converters ? dc/ac inverters benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/dt and di/dt capability ? lead - free, rohs compliant fig 1. typical on - resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to - 220ab irfb7787pbf d 2 pak irfs7787pbf to - 262 IRFSL7787pbf s d g s d g s d g d g d s gate drain source base part number package type standard pack orderable part number form quantity irfb7787pbf to - 220 tube 50 irfb7787pbf IRFSL7787pbf to - 262 tube 50 IRFSL7787pbf irfs7787pbf tube 50 irfs7787pbf d 2 - pak tape and reel left 800 irfs7787trlpbf d s g v dss 75v r ds(on) typ. 6.9m ? max 8.4m ? i d 76a 25 50 75 100 125 150 175 t c , casetemperature (c) 0 20 40 60 80 i d , drain current (a) 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 10 20 30 40 r ds (on), drain-to -source on resistance ( m ? ) t j = 25c t j = 125c i d = 46a 1 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 downloaded from: http:///
irfb/s/sl7787pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 76 a i d @ t c = 100c continuous drain current, v gs @ 10v 54 i dm pulsed drain current ? 280 p d @t c = 25c maximum power dissipation 125 w linear derating factor 0.83 w/c v gs gate - to - source voltage 20 v t j t stg operating junction and storage temperature range - 55 to + 175 c soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6 - 32 or m3 screw 10 lbfin (1.1 nm) avalanche characteristics e as (thermally limited) single pulse avalanche energy ? 144 mj e as (tested) single pulse avalanche energy tested value ? 150 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance symbol parameter typ. max. units r ? jc junction - to - case ? CCC 1.2 c/w r ? cs case - to - sink, flat greased surface 0.50 CCC r ? ja junction - to - ambient ? CCC 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain - to - source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.06 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain - to - source on - resistance CCC 6.9 8.4 m ? v gs = 10v, i d = 46a CCC 8.2 CCC v gs = 6.0v, i d = 23a v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 100a i dss drain - to - source leakage current CCC CCC 1.0 a v ds = 75 v, v gs = 0v CCC CCC 150 v ds = 75v,v gs = 0v,t j =125c i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v r g gate resistance CCC 2.1 CCC ? notes: ? this value determined from sample failure population, starting t j =25c, l=0.138mh, r g = 50 ? , i as =46a, v gs =10v. ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.138mh, r g = 50 ? , i as = 46a, v gs =10v. ? i sd ? 46a, di/dt ? 425a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. downloaded from: http:///
irfb/s/sl7787pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 154 CCC CCC s v ds = 10v, i d =46a q g total gate charge CCC 73 109 i d = 46a nc q gs gate - to - source charge CCC 18 CCC v ds = 38v q gd gate - to - drain charge CCC 23 CCC v gs = 10v q sync total gate charge sync. (qgC qgd) CCC 50 CCC t d(on) turn - on delay time CCC 11 CCC ns v dd = 38v t r rise time CCC 48 CCC i d = 46a t d(off) turn - off delay time CCC 51 CCC r g = 2.7 ? t f fall time CCC 39 CCC v gs = 10v ? c iss input capacitance CCC 4020 CCC pf v gs = 0v c oss output capacitance CCC 330 CCC v ds = 25v c rss reverse transfer capacitance CCC 205 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 295 CCC v gs = 0v, vds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) CCC 380 CCC v gs = 0v, vds = 0v to 60v ? diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 76 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 280 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 46a,v gs = 0v ? dv/dt peak diode recovery dv/dt ? CCC 10 CCC v/ns t j = 175c,i s =46a,v ds = 75v ? t rr reverse recovery time CCC 33 CCC ns t j = 25c v dd = 64v CCC 39 CCC t j = 125c i f = 46a, q rr reverse recovery charge CCC 42 CCC nc t j = 25c di/dt = 100a/s ? CCC 61 CCC t j = 125c i rrm reverse recovery current CCC 2.2 CCC a t j = 25c d s g downloaded from: http:///
irfb/s/sl7787pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 fig 6. normalized on - resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain - to - source voltage fig 8. typical gate charge vs. gate - to - source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) v ds = 25v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r ds(on) , drain-to-source on resistance (normalized) i d = 46a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance (pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds short ed c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 60v v ds = 38v v ds= 15v i d = 46a downloaded from: http:///
irfb/s/sl7787pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 fig 10. maximum safe operating area fig 11. drain - to - source breakdown voltage fig 9. typical source - drain diode forward voltage fig 12. typical c oss stored energy fig 13. typical on - resistance vs. drain current 0.1 0.4 0.7 1.0 1.3 1.6 1.9 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v (br)dss , drain-to-source breakdown voltage (v) id = 1.0ma 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 energy (j) 0 40 80 120 160 i d , drain current (a) 5.0 10.0 15.0 20.0 25.0 30.0 r ds (on), drain-to -source on resistance ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on) downloaded from: http:///
irfb/s/sl7787pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 fig 14. maximum effective transient thermal impedance, junction - to - case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an - 1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long a st jmax is not exceeded. 3. equation below based on circuit and waveforms sho wn in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pu lse. 5. bv = rated breakdown voltage (1.3 factor account s for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to e xceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 thermal response ( z thjc ) c/w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e ar , avalanche energy (mj) top single pulse bottom 1.0% duty cycle i d = 46a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 avalanche current (a) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. (single pulse) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
irfb/s/sl7787pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 17. threshold voltage vs. temperature fig 18. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs (th) gate threshold voltage (v) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 di f /dt ( a/s) 0 4 8 12 16 i rrm (a) i f = 46a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 di f /dt ( a/s) 0 4 8 12 16 i rrm (a) i f = 30a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 di f /dt ( a/s) 0 50 100 150 200 250 q rr (nc) i f = 30a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 di f /dt ( a/s) 0 50 100 150 200 250 q rr (nc) i f = 46a v r = 64v t j = 25c t j = 125c downloaded from: http:///
irfb/s/sl7787pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 fig 22. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i a s 0 .0 1 ? t p d .u .t l v d s + - v d d d r iv e r a 1 5 v 2 0 v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (b r ) d s s i a s fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms v ds v gs id v gs(th) q gs1 q gs2 q gd q godr fig 25b. gate charge waveform vdd downloaded from: http:///
irfb/s/sl7787pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 to - 220ab package outline (dimensions are shown in millimeters (inches)) to - 220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ i n t e r n a t i o n a l p a r t n u m b e r r e c t i f i e r l o t c o d e a s s e m b l y l o g o y e a r 0 = 2 0 0 0 d a t e c o d e w e e k 1 9 l i n e c l o t c o d e 1 7 8 9 e x a m p l e : t h i s i s a n i r f 1 0 1 0 n o t e : " p " i n a s s e m b l y l i n e p o s i t i o n i n d i c a t e s " l e a d - f r e e " i n t h e a s s e m b l y l i n e " c " a s s e m b l e d o n w w 1 9 , 2 0 0 0 to - 220ab packages are not recommended for surface mount application . downloaded from: http:///
irfb/s/sl7787pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 to - 262 package outline (dimensions are shown in millimeters (inches) to - 262 part marking information logo rectifier international lot code assembly logo rectifier international date code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead-free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
irfb/s/sl7787pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 d 2 pak (to - 263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to - 263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code downloaded from: http:///
irfb/s/sl7787pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback march 13, 2014 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ?? applicable version of jedec standard at the time of product release. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to - 263ab) tape & reel information (dimensions are shown in millimeters (inches)) qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to - 220 n/a d 2 pak msl1 to - 262 n/a rohs compliant yes note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto - call/ downloaded from: http:///

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