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? absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 27 78 490 20 3021 120 50 -55 to + 150 3.6 0.029 59 features benefits low thermal resistance to pcb (< 1.7c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 2.95 (@v gs = 4.5v) 4.30 q g typ 30.0 nc i d (@t c(bottom) = 25c) 50 a m !"#$ % &'() form quantity irfh8316trpbf pqfn 5mm x 6mm tape and reel 4000 IRFH8316TR2PBF pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note downloaded from: http:/// !"#$ % &'() d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 1.7 r jc (top) junction-to-case CCC 32 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 21 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 2.40 2.95 CCC 3.40 4.30 v gs(th) gate threshold voltage 1.2 1.7 2.2 v ? v gs(th) gate threshold voltage coefficient CCC -6.4 CCC mv/c i dss drain-to-source leakage current CCC CCC 1 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 69 CCC CCC s q g total gate charge CCC 59 CCC nc q g total gate charge CCC 30.0 45.0 q gs1 pre-vth gate-to-source charge CCC 7.0 CCC q gs2 post-vth gate-to-source charge CCC 2.7 CCC q gd gate-to-drain charge CCC 9.7 CCC q godr gate charge overdrive CCC 10.6 CCC q sw switch charge (q gs2 + q gd ) CCC 12.4 CCC q oss output charge CCC 18 CCC nc r g gate resistance CCC 1.1 1.7 t d(on) turn-on delay time CCC 19 CCC t r rise time CCC 67 CCC t d(off) turn-off delay time CCC 20 CCC t f fall time CCC 24 CCC c iss input capacitance CCC 3610 CCC c oss output capacitance CCC 740 CCC c rss reverse transfer capacitance CCC 390 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 14 21 ns q rr reverse recovery charge CCC 18 27 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v CCC v gs = 20v v gs = -20v CCC CCC 490 CCC CCC 50 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a conditions max. 160 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 15v di/dt = 380a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. typ. CCC r g =1.8 v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = v gs , i d = 50 a a v gs = 4.5v, i d = 16a v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c m v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a downloaded from: http:/// ( !"#$ % &'() ! "" # !$ "" # %&' "( !% 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v 2.5v bottom 2.3v 60 s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v 2.5v bottom 2.3v 60 s pulse width tj = 150c 2.3v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050607080 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a downloaded from: http:/// !"#$ % &'() )% % %*%' +, ""-.%/ )% % 0 )% %$ ! -.%/% "$ $' 1 '# '#!% 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) 100 sec 1msec 10msec dc limited by source bonding technology downloaded from: http:/// !"#$ % &'() )% %0 !$ "( ! # 2 %'* ' 3 % 2 %'* ' t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 1 % 1 %3 % v gs v ds 90% 10% t d(on) t d(off) t r t f 1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.6a 8.6a bottom 20a 0 5 10 15 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c downloaded from: http:/// !"#$ % &'() 4$'( '5' " 67 41 3 % vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 8 8 + - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s downloaded from: http:/// * !"#$ % &'() ! ! "# $ ! xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:/// + !"#$ % &'() "#$ $ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 6.20 6.40 .244 .252 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 5.20 5.40 .205 .213 description w 1 qty 4000 reel diameter 13 inches downloaded from: http:/// , !"#$ % &'() 9 ' ' '* ( :1 ;55111 ! !%5 ' " 5 6 % ' % ! 4 * ( % ; ;55111 ! !%51"5 5 0 ,$ ' '% ' ! % & # # '( ) *& & + * ,-./ 0123/ , 4 + , 5 6& # " 7% #&( ( ,8 . r is &# 9 &# :& , ; # x1 ' # <!" . & # && & ' # )& ' *& & .& # 5 '( & '# ( ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel optio n (eol notice #259) ? updated tape and reel on page 8. 5/13/2014 downloaded from: http:/// |
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