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tck106g/TCK107G/tck108g 2012-12-11 1 toshiba cmos linear integrat ed circuit silicon monolithic tck106g, TCK107G, tck108g 1.0 a load switch ic with slew rate control driver in ultra small package the tck106g, TCK107G and tck108g are load switch ics for a general power management with slew rate control driver, featuring low switch on resistance and wide input voltage operation from 1.1 to 5.5 v. switch on resistance is only 49 m ? typical at 5.0 v, 500 ma condition and output current is avai lable on 1.0 a . TCK107G and tck108g feature output auto-discharge function. these devices are available in 0.4 mm pitch ultra small package wcsp4 (0.79 mm x 0.79 mm, t: 0.5 mm) .thus this devices is ideal for portable applications that require high-density board assembly such as cellular phone. feature ? wide input voltage operation: v in = 1.1 to 5.5 v ? high output current: i out = 1.0 a ? low on resistance : r on = 49 m ? (typ) at v in = 5.0 v, 500 ma r on = 57 m ? (typ) at v in = 3.3 v, 500 ma r on = 83 m ? (typ) at v in = 1.8 v, 500 ma r on = 143 m ? (typ) at v in = 1.2 v, 200 ma r on = 176 m ? (typ) at v in = 1.1 v, 200 ma ? built in slew rate control driver ? built in auto-discharge (TCK107G and tck108g) ? active high and pull down connection bet ween control and gnd (t ck106g and TCK107G) ? active low (tck108g) ? ultra small package : wcsp4 (0.79 mm x 0.79 mm, t: 0.5 mm) pin assignment(top view) top marking wcsp4 weight : 0.7 mg ( typ.) control (b2) gnd (b1) v in (a2) v out (a1) index 6k: tck106g 7k: TCK107G 8k: tck108g
tck106g/TCK107G/tck108g 2012-12-11 2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit input voltage v in 6.0 v control voltage v ct -0.3 to 6.0 v output voltage v out -0.3 to v in +0.3 v output current i out dc 1.0 a power dissipation p d 800 (note 1) mw operating temperature range t opr ?40 to 85 c junction temeperature tj 150 c storage temperature t stg ?55 to 150 c note : using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati ng temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the a ppropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precau tions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1: rating at mounting on a board (glass epoxy board dimension : 40mm x 40mm, both sides of board metal pattern ratio : a surface approximatel y 50%, the reverse side approximately 50% through hole hall : diameter 0.5mm x 28) block diagram tck106g, TCK107G tck108g note 2: TCK107G only out control logic v in control v out gnd slew rate control driver control logic v in control v gnd slew rate control driver output discharge (note 2) pull down
tck106g/TCK107G/tck108g 2012-12-11 3 electrical characteristics dc characteristics (ta = -40 to 85c) characteristics symbol test condition min. typ. max. unit input voltage v in ? 1.1 ? 5.5 v control high-level input voltage v ih v in = 1.1 to 5.5 v 0.9 ? ? v control low-level input voltage v il v in = 1.1 to 5.5 v ? ? 0.4 v v in = v ct = 5.5 v, i out = 0 ma tck106g TCK107G quiescent current (on state) i q v in = 5.5 v, v ct = 0 v, i out = 0 ma tck108g ? 80 200 na v in = 5.5 v, v ct = 0 v, v out = open (note 3) tck106g TCK107G standby current (off state) i q(off) v in = v ct = 5.5 v, v out = open (note 3) tck108g ? 50 135 na v in = 5.5 v, v ct = 0 v, v out = gnd tck106g TCK107G off-state switch current i sd(off) v in = v ct = 5.5 v, v out = gnd tck108g ? 14 1000 na v in = 5.0 v, i out = -0.5 a ? 49 73 v in = 3.3 v, i out = -0.5 a ? 57 84 v in = 1.8 v, i out = -0.5 a ? 83 123 v in = 1.2 v, i out = -0.2 a ? 143 225 on resistance r on v in = 1.1 v, i out = -0.2 a ? 176 ? m discharge on resistance r sd ? ( TCK107G and tck108g) ? 100 ? note 3 except i sd(off) off-state switch current
tck106g/TCK107G/tck108g 2012-12-11 4 ac characteristics (ta = 25c) v in = 1.2 v characteristics symbol test condi tion(figure 1) min. typ. max. unit v out rise time t r r l =500? , c l =0.1 f ? 290 ? s TCK107G tck108g ? 30 ? v out fall time t f r l =500? , c l =0.1 f tck106g ? 104 ? s turn on delay t on r l =500? , c l =0.1 f ? 305 ? s turn off delay t off r l =500? , c l =0.1 f ? 5 ? s v in = 3.3 v characteristics symbol test condi tion(figure 1) min. typ. max. unit v out rise time t r r l =500? , c l =0.1 f ? 130 ? s TCK107G tck108g ? 25 ? v out fall time t f r l =500? , c l =0.1 f tck106g ? 110 ? s turn on delay t on r l =500? , c l =0.1 f ? 100 ? s turn off delay t off r l =500? , c l =0.1 f ? 10 ? s ac waveform tck106g, TCK107G tck108g figure 1 t r , t f, t on, t off waveforms v ih v out v ct v ol v oh v il 90% t on t off 50% 50% 10% t r t f v out 10% 90% 90% 10% v ih v out v ct v ol v oh v il 90% t on t off 50% 50% 10%
tck106g/TCK107G/tck108g 2012-12-11 5 application note 1. application circuit example (top view) the figure below shows the recommended config uration for tck106g, TCK107G and tck108g. 1) input capacitor an input capacitor (c in ) is not necessary for the guaranteed oper ation of tck106g, TCK107G and tck108g. however, it is recommended to use inpu t capacitors to reduce voltage drop due to sharp changes in output current and also for improved stability of the power supply. when used, place c in as close to v in pin to improve stability of the power supply. also, due to the c in selected, v in < v out may occur, causing a reverse current to flow through the body diode of the pass-through p-ch mosfet of the load switch ic. in this case, a higher value for c in as compared to c l is recommended. 2) output capacitor an output capacitor (c out ) is not necessary for the guaranteed operation of tck106g, tc k107g and tck108g. however, there is a possibility of overshoot or undershoot caused by outpu t load transient response, board layout and parasitic components of load switch ic. in this case, an output capacitor with c out more than 0.1 f us recommended. 3) control pin a control pins for tck106g and TCK107G are both active high and tck108g is active low. these controls both the pass-through p-ch mosfet and the discharge n-ch mosfet (except tck106g), operated by the control voltage and schmitt trigger. when the control volta ge level is high (low; tck108g), p-ch mosfet is on state and n-ch mosfet is off state. when control voltage level is low ( high; tck108g), and the state of the mosfets is reversed. also, pull down resistance equivalent to a few m is connected between control and gnd, thus the load switch ic is in off state even when control pin is open(except tck108g). in addition, control pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. v out gnd v in control c l r l load c in part number control voltage ic operation high on low off tck106g TCK107G open off high off tck108g low on
tck106g/TCK107G/tck108g 2012-12-11 6 2. power dissipation power dissipation is measured on the board condition shown below. [the board condition] board material: glass epoxy (fr4) board dimension: 40mm x 40mm (both sides of board) t=1.8mm metal pattern ratio: a surface approximatel y 50%, the reverse side approximately 50% through hole: diameter 0.5mm x 28 please allow sufficient margin when designing a board pattern to fit the expected power dissipation. also take into consideration the ambient temperature, input voltage, output current etc and applying the appropriate derating for allowable power dissipation during operation. 0 200 400 600 800 1000 -40 0 40 80 120 power dissipation p d (mw) ambient temperature ta () p d -ta
tck106g/TCK107G/tck108g 2012-12-11 7 representative common characteristics on res i stance r on ( m ? ) off-state switch current i sdoff ( n a) s tan db y current i q(off) ( n a) i q - v in input voltage v in (v) q u i escent current (on state ) i q ( n a) ta = 25 85 -40 i q(off) - v in input voltage v in (v) ta = 25 85 -40 i out = 0ma v ct = 5.5 v v ct = 0 v v out = gnd input voltage v in (v) ta = 85 25 -40 v ct = 0 v v out = gnd i sd(off) - v in ta = 25 output current i out (ma) on res i stance r on ( m ? ) i out = 200ma r on - i out r on - v in input voltage v in (v) ta = 25 85 -40 v in = 1.2v 1.8v 3.3v :w 5.0v on res i stance r on ( m ? ) ambient temperature t a ( ) v in = 1.2v :w 1.8v :w 3.3v 5.0v :w i out = 200ma r on - t a
tck106g/TCK107G/tck108g 2012-12-11 8 time t (200 s/div) v in = 1.2v t on response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 10 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) time t (200 s/div) 1.0 0 v in = 3.3v t on response 4.0 2.0 0 100 0 c l = 0.1 f 1.0 f 4.7 f 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) time t (200 s/div) v in = 5.0v t on response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 100 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) TCK107G t on response time t (1ms/div) v in = 1.2v t off response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 10 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) time t (1ms/div) 1.0 0 v in = 3.3v t response 4.0 2.0 0 100 0 c l = 0.1 f 1.0 f 4.7 f 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) tck106g t off response
tck106g/TCK107G/tck108g 2012-12-11 9 time t (1ms/div) v in = 5.0v t off response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 100 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) time t (200 s/div) v in = 1.2v t off response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 10 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) time t (200 s/div) 1.0 0 v in = 3.3v t off response 4.0 2.0 0 100 0 c l = 0.1 f 1.0 f 4.7 f 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v ) TCK107G t off response time t (200 s/div) v in = 5.0v t off response c l = 0.1 f 1.0 f 4.7 f 1.0 0 4.0 2.0 0 100 0 2.0 r l = 500 i out ( m a ) v out ( v ) v ct ( v )
tck106g/TCK107G/tck108g 2012-12-11 10 package dimensions wcsp4 unit : mm weight : 0.7 mg ( typ.)
tck106g/TCK107G/tck108g 2012-12-11 11 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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