View IRGB6B60KPBF_8762933.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

parameter min. typ. max. units r jc junction-to-case - igbt CCC CCC 1.4 r cs case-to-sink, flat, greased surface CCC 0.50 CCC c/w r ja junction-to-ambient, typical socket mount CCC CCC 62 r ja junction-to-ambient (pcb mount, steady state) CCC CCC 40 wt weight CCC 1.44 CCC g parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 13 a i c @ t c = 100c continuous collector current 7.0 i cm pulsed collector current 26 i lm clamped inductive load current 26 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 90 p d @ t c = 100c maximum power dissipation 36 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) insulated gate bipolar transistor features 11/18/04 absolute maximum ratings ? low vce (on) non punch through igbt technology.? 10s short circuit capability. ? square rbsoa. ? positive vce (on) temperature coefficient. ? lead-free. benefits www.irf.com 1 ? benchmark efficiency for motor control. ? rugged transient performance. ? low emi. ? excellent current sharing in parallel operation. thermal resistance IRGB6B60KPBFirgs6b60kpbf irgsl6b60kpbf v ces = 600v i c = 7.0a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.8v e c g n-channel d 2 pak irgs6b60k to-220ab irgb6b60k to-262 irgsl6b60k downloaded from: http:///
irgb/s/sl6b60kpbf 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) ref.fig. 5, 6,78,9,10 8,9,10 11 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 CCC CCC v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown voltage CCC 0.3 CCC v/c v ge = 0v, i c = 1.0ma, (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.5 1.80 2.20 v i c = 5.0a, v ge = 15v CCC 2.20 2.50 i c = 5.0a,v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage CCC -10 CCC mv/c v ce = v ge , i c = 1.0ma, (25c-150c) g fe forward transconductance CCC 3.0 CCC s v ce = 50v, i c = 5.0a, pw=80s i ces zero gate voltage collector current CCC 1.0 150 a v ge = 0v, v ce = 600v CCC 200 500 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v parameter min. typ. max. units conditions qg total gate charge (turn-on) CCC 18.2 CCC i c = 5.0a qge gate - emitter charge (turn-on) CCC 1.9 CCC nc v cc = 400v qgc gate - collector charge (turn-on) CCC 9.2 CCC v ge = 15v e on turn-on switching loss CCC 110 210 j i c = 5.0a, v cc = 400v e off turn-off switching loss CCC 135 245 v ge = 15v,r g = 100 ?, l =1.4mh e tot total switching loss CCC 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time CCC 25 34 i c = 5.0a, v cc = 400v t r rise time CCC 17 26 v ge = 15v, r g = 100 ? l =1.4mh t d(off) turn-off delay time CCC 215 230 ns ls = 150nh, t j = 25c t f fall time CCC 13.2 22 e on turn-on switching loss CCC 150 260 i c = 5.0a, v cc = 400v e off turn-off switching loss CCC 190 300 j v ge = 15v,r g = 100 ?, l =1.4mh e tot total switching loss CCC 340 560 ls = 150nh t j = 150c t d(on) turn-on delay time CCC 28 37 i c = 5.0a, v cc = 400v t r rise time CCC 17 26 v ge = 15v, r g = 100 ? l =1.4mh t d(off) turn-off delay time CCC 240 255 ns ls = 150nh, t j = 150c t f fall time CCC 18 27 c ies input capacitance CCC 290 CCC v ge = 0v c oes output capacitance CCC 34 CCC pf v cc = 30v c res reverse transfer capacitance CCC 10 CCC f = 1.0mhz t j = 150c, i c = 26a, vp =600v v cc = 500v, v ge =+15v to 0v, s t j = 150c, vp =600v, r g = 100 ? v cc = 360v, v ge = +15v to 0v switching characteristics @ t j = 25c (unless otherwise specified) rbsoa reverse bias safe operting area full square scsoa short circuit safe operting area 10 CCC CCC ref.fig. 17 ct1 ct4 ct4 12,14 wf1wf2 4 ct2 ct3 wf3 ct4 r g = 100 ? 13, 15 ct4 wf1wf2 note to are on page 13 16 downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c ( c) 0 5 10 15 i c ( a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 80 90 100 p t o t ( w ) 1 10 100 1000 10000 v ce (v ) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 10 100 1000 v ce (v) 0 1 10 100 i c a ) downloaded from: http:///
irgb/s/sl6b60kpbf 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 5 fig. 9 - typical v ce vs. v ge t j = 25c fig. 8 - typical v ce vs. v ge t j = -40c fig. 10 - typical v ce vs. v ge t j = 150c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10s 5 1 01 52 0 v ge (v ) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 0 5 10 15 20 v ge (v) 0 5 10 15 20 25 30 35 40 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a downloaded from: http:///
irgb/s/sl6b60kpbf 6 www.irf.com fig. 13 - typ. switching time vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 12 - typ. energy loss vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v 0 50 100 150 200 r g ( ? ) 0 50 100 150 200 250 e n e r g y ( j ) e on e off 0 5 10 15 20 i c (a) 0 100 200 300 400 500 600 700 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 7 fig. 17 - typical gate charge vs. v ge i ce = 5.0a; l = 600h fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 1 10 100 v ce (v ) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v fig 18. maximum transient thermal impedance, junction-to-case (igbt) 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.708 0.000220.447 0.00089 0.219 0.01037 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri downloaded from: http:///
irgb/s/sl6b60kpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 9 -50 0 50 100 150 200 250 300 350 400 450 -0.20 0.30 0.80 time(s) v ce (v) -1 0 1 2 3 4 5 6 7 8 9 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 16.00 16.10 16.20 16.30 16.40 time (s) v ce (v) -5 0 5 10 15 20 25 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss 0 100 200 300 400 500 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 10 20 30 40 50 i ce (a) v ce i ce fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf3- typ. s.c waveform@ t c = 150c using fig. ct.3 downloaded from: http:///
irgb/s/sl6b60kpbf 10 www.irf.com

example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free"

downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 11

dimensions are shown in millimeters (inches) note: "p" in as s embly line position indicates "lead-free" f 530s this is an irf530s wit h lot code 8024 as s embled on ww 02, 2000 in the as s emb ly l ine "l" as s e mb l y lot code inte rnational re ct if ier logo part number dat e code year 0 = 2000 we e k 02 line l f530s a = assembly site code week 02 p = designates lead-free product (optional) rect ifier int ernat ional logo lot code assembly ye ar 0 = 2000 dat e code part number downloaded from: http:///
irgb/s/sl6b60kpbf 12 www.irf.com to-262 part marking information to-262 package outlinedimensions are shown in millimeters (inches) assembly lot code rectifier int e r nat ional as s e mb le d on ww 19, 1997 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part nu mb e r part number logo lot code assembly int e r nat ional rectifier product (optional) p = de s i gn at e s l e ad -f r e e a = assembly site code wee k 19 ye ar 7 = 1997 dat e code or downloaded from: http:///
irgb/s/sl60b60kpbf www.irf.com 13 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site. notes: v cc = 80% (v ces ), v ge =15v, l = 28h, r g = 22 ? this is only applied to to-220ab package this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery, using diode hf03d060ace. to-220 package is not recommended for surface mount application

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

▲Up To Search▲

Price & Availability of IRGB6B60KPBF

	To Download IRGB6B60KPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .