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  BUL89 high voltage fast-switching npn power transistor n high voltage capability n minimum lot-to-lot spread for reliable operation n low base-drive requirements n very high switching speed n fully characterized at 125 o c applications n electronic transformer for halogen lamps n switch mode power supplies description the BUL89 is manufactured using high voltage multiepitaxial mesa technology for cost-effective high performance. it uses a hollow emitter structure to enhance switching speeds. the bul series is designed for use in lighting applications and low cost switch-mode power supplies. ? internal schematic diagram september 2001 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 850 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c =0) 9 v i c collector current 12 a i cm collector peak current (t p <5ms) 25 a i b base current 6 a i bm base peak current (t p <5ms) 12 a p tot total dissipation at t c =25 o c 110 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 1/6
thermal data r thj-case thermal resistance junction-case max 1.14 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce =850v v ce =850v t j =125 o c 100 500 m a m a i ceo collector cut-off current (i b =0) v ce = 400 v 100 m a v ceo(sus ) * collector-emitter sustaining voltage (i b =0) i c =10ma l=25mh 400 v v ebo emitter-base voltage (i c =0) i e =10ma 9 v v ce(sat) * collector-emitter saturation voltage i c =5a i b =1a i c =8a i b = 1.6 a i c =12a i b =2.4a 1 1.5 5 v v v v be(s at) * base-emitter saturation voltage i c =5a i b =1a i c =8a i b = 1.6 a 1.3 1.6 v v h fe * dc current gain i c =5a v ce =5v i c =10ma v ce =5v 10 10 40 t s t f inductive load storage time fall time i c =8a i b1 =1.6a v be(off) =-5v r bb =0 w v cl =350v l=200 m h (see figure 1) 1.5 55 2.3 110 m s ns t s t f inductive load storage time fall time i c =8a i b1 =1.6 a v be(off) =-5v r bb =0 w v cl =350v l=200 m h t j =100 o c (seefigure1) 1.9 80 m s ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area derating curve BUL89 2/6
dc current gain collector emitter saturation voltage inductive load fall time dc current gain base emitter saturation voltage inductive load storage time BUL89 3/6
reverse biased soa figure 1 : inductive load switching test circuit 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier BUL89 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BUL89 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com BUL89 6/6


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Price & Availability of BUL89
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
BUL89
497-6682-5-ND
STMicroelectronics TRANS NPN 400V 12A TO220 100: USD2.0053
50: USD2.3394
1: USD2.95
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0

Verical

Part # Manufacturer Description Price BuyNow  Qty.
BUL89
30596366
STMicroelectronics Trans GP BJT NPN 400V 12A 110000mW 3-Pin(3+Tab) TO-220AB Tube 25: USD1.2625
BuyNow
37

Bristol Electronics

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BUL89
STMicroelectronics RFQ
559

Quest Components

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BUL89
STMicroelectronics 389: USD2.2968
91: USD2.5752
1: USD4.176
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447

Chip1Stop

Part # Manufacturer Description Price BuyNow  Qty.
BUL89
C1S730200414265
STMicroelectronics Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220 Tube 10: USD1.01
1: USD1.09
BuyNow
37

Perfect Parts Corporation

Part # Manufacturer Description Price BuyNow  Qty.
BUL89
STMicroelectronics RFQ
5144
BUL89
MFG UPON REQUEST RFQ
3219

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