draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 9 r ffm8511 4.9ghz to 5.85ghz 802.11a/n/ac wifi front end module the RFFM8511 provides a complete integrated solution in a single front end module (fem) for wifi 802.11a/n/ac systems. the ultra - small factor and integrated matching minimizes layout area in the customer?s application and greatly reduces the number of external components. this simplifies the total front end solution by reducing the bill of material s, system footprint, and manufacturing cos t. the RFFM8511 integrates a 5 ghz power amplifier (pa), single pole double throw switch (sp2t), lna with bypass, and a power detector coupler for improved accuracy. the device is provided in a 2.5mm x 2.5mm x 0.4 0mm, 16 - pin qfn package . pdet pa_en gnd vcc gnd lna_en vcc gnd c_rx tx 15 3 1 vmode vcc rx 12 ant 2 13 11 10 9 8 7 6 5 4 14 16 gnd gnd functional block diagram ordering information RFFM8511sb standard 5 - piece sample bag rf fm8511 sq standard 25 - piece bag rf fm8511 sr standard 100 - piece reel rf fm8511tr7 standard 2500 - piece reel rf fm8511 pck - 410 fully assembled eval board w/ 5 - piece bag package: q fn, 16 - pin, 2.5mm x 2.5 mm x 0.40mm features p out = +18.0 dbm at 3.6 v, 802.11ac 80mhz mcs9 256qam at 1.8% dynamic evm compliance p out = +19.0 dbm , 11n 20mhz 2.5% ( - 32db)evm p out = +2 1 .0 dbm at 3.6v, 802.11ac 80mhz mcs0 at spectral mask compliance input and output matched to 50? integrated 5ghz pa, sp2t switch, lna, and pdet low height package, suited for module and chip on board (cob) designs supports low power mode for improved efficiency applications cellular handsets mobile devices tablets consumer electronics gaming n etbooks/notebooks tv/monitors/video RFFM8511
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 r ffm8511 pr eliminary absolute maximum rat ings parameter rating unit dc supply voltage (no rf applied) 6 v pa enable voltage - 0.5 to 5 v dc dc supply current 500 ma operating temperature range - 40 to +85 oc storage temperature - 40 to +150 oc maximum tx input power for 11a/n (no damage) +12 dbm lna on maximum rx input power (no damage) +12 dbm bypass mode maximum rx input power (no damage) +25 dbm moisture sensitivity msl2 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max compliance 802.11a, 802.11n, 802.11ac operating frequency 5.18 5.825 ghz extended frequency 4.9 5.925 ghz nominal operating temperature - 10 70 oc operating temperature - 40 85 oc power supply v cc 3. 0 3.6 4.2 v control voltage - high 2.8 3.1 v cc v pa_en, c_rx, lna_en , v mode control voltage - low 0 0.2 v transmit (tx - ant) high power mode t = - 10 c to +70 c, v cc = 3.3v to 4.2 v, 50% duty cycle unless otherwise noted output power 17.0 1 8.0 dbm t = 25c, v cc = 3.6v 80mhz 802.11ac dynamic evm 1.5 1.8 % - 36.5 - 35 .0 db output power 15.0 16.0 dbm t = - 10c to +70c , v cc = 3. 0 v to 4.2 v 80mhz 802.11ac dynamic evm 1.5 1.8 % - 36.5 - 35 .0 db output power 19. 0 dbm t = 25c, v cc = 3.6v 20 /40 mhz 802.11n dynamic evm 2.5 3 % - 32 .0 - 30.5 db output power 16.5 17.5 dbm t = - 10c to +70c , v cc = 3. 0 v to 4.2 v 20 /40 mhz 802.11n dynamic evm 2.5 3 % - 32 .0 - 30.5 db 40mhz 802.11n spectral mask output power 2 0 dbm t = 25c, v cc = 3.6v 20/80mhz 802.11ac spectral mask output power 2 1 dbm tx port return loss 10 18 db ant port return loss 10 18 db
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 9 r ffm8511 pr eliminary parameter specification unit condition min typ max transmit (tx - ant) high power mode (continued) t = - 10 c to +70 c, v cc = 3.3v to 4.2 v, 50% duty cycle unless otherwise noted large signal gain 25 28 db t = 25c, v cc = 3.6v 23 28 db t = - 10c to +70c , v cc = 3.0 to 4.2v gain flatness over any 80mhz bw - 0.5 0.5 db gain flatness across band - 1 1 db operating current 2 1 0 250 ma p out = +17 dbm, t = 25c, v cc = 3.6v 2 4 0 280 ma p out = +19 dbm, t = 25c, v cc = 3.6v 2 8 0 ma p out = 21 dbm, t = 25c, v cc = 3.6v quiescent current 1 50 ma pa_en current 70 1 50 ua second harmonic - 45 - 30 dbm /mhz p out = +21 dbm, t = 25c, v cc = 3.6v, 6mbps 802.11a third harmonic - 45 - 30 dbm /mhz power detector voltage 0.27 v p out = 0dbm 0.8 1 v p out = +17 dbm 0.98 v p out = +21 dbm variation from 0 - 360 load pull - 1.5 1.5 db 3:1 vswr ant - rx isolation (tx enabled and maximum power) 28 db transmit (tx - ant) low power mode t= 25c, v cc = 3.6v,50% duty cycle unless otherwise noted output power 10 .0 dbm t = 25c, v cc = 3.6v 40/ 80mhz 802.11ac dynamic evm 1.5 1.8 % - 36.5 - 35 .0 db output power 12 .0 dbm t = 25c, v cc = 3.6v 20mhz 802.11n dynamic evm 2 .5 3 .0 % - 32.0 - 30.5 db 40mhz 802.11n spectral mask output power 11.0 dbm t = 25c, v cc = 3.6v 20/80mhz 802.11ac spectral mask output power 12.0 dbm power detector voltage 0.27 v p out = 0dbm 0.50 v p out = +10 dbm 0. 58 v p out = +12 dbm 80mhz 802.11ac operating current 1 50 ma p out = +10dbm 20mhz 802.11n operating current 1 60 ma p out = +12dbm v mode control line current 160 500 a gain 24 2 7 db p out = +10dbm, 80mhz 802.11ac receive (ant - rx) - lna on t = +25c, v cc = 3.0 to 4.2 v, c_rx=lna_en=high, pa_en=low, unless otherwise noted. gain 10 1 4 1 6 db t = 25c, v cc = 3.6v gain flatness over any 80mhz bw - 0.5 0.5 db gain flatness across band - 1 1 db noise figure 2.5 3 db
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 9 r ffm8511 pr eliminary parameter specification unit condition min typ max rx port return loss 9 12 db ant port return loss 6 10 db nominal input p1db - 8 - 4 dbm t = 25c, v cc = 3.6v current consumption 10 1 8 ma lna_en control current 130 200 a lna turn on time 400 600 ns receive (ant - rx) - bypass mode t = +25c, v cc = 3.3to 4.2 v, c_rx=lna_en=high, pa_en=low, unless otherwise noted. lna bypass current 2.0 10 a nominal insertion loss 6 10 db t = 25c, v cc = 3.6v rx port return loss 10 20 db ant port return loss 9 20 db nominal input p1db 15 20 dbm t = 25c, v cc = 3.6v general specifications control line impedance - pa_en 75 k? control line impedance - lna_en 78 k? control line impedance - c_rx 27 m? switch control current ? high - each line 5 100 a switch control current ? low - each line 0.5 10 a switching speed 100 500 ns esd ? human body model 1000 v esd ? charge device model 500 v pa turn - on time 200 500 ns 10% to 90% pa stability +20 dbm no spurious above - 41.25dbm/mhz up to 4:1 vswr maximum input power 12 dbm into 50?, v cc = 3.3v, 25c 12 dbm 6:1 vswr, v cc = 3.3v, 25c 5 dbm 10:1 vswr, v cc = 3.3v, 25c ruggedness 10:1 vswr at typical operating conditions leakage current 2 10 ua v cc = 4.8v, t = 25c, rf off, all control lines floating
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 9 r ffm8511 pr eliminary switch control logic truth table operating mode pa_en lna_en c_rx vmode standby low low low low 802.11a/n/ac tx high power high low low low 802.11a/n/ac tx low power high low low high 802.11a/n/ac rx gain low high high low 802.11a/n/ac rx bypass low low high low notes: ? pa_en and tx switch control are tied together internally. ? high = 2.8 to v cc . low = 0v to 0.2v t iming diagram level is set per the data sheet vcc pa _ en c _ rx 0 . 2 usec time tx rf signal transmit timing diagram power on / off sequence rx is low during tx 0 . 2 usec 0 . 2 usec 0 . 2 usec apply 3 . 6 v to pins 4 , 10 , and 11 both controls must be off during transmit . the order is not critical . apply a max of 0 . 4 v to pins 15 and 16 for transmit : apply 3 . 1 v to pin - 6 note 1 : rf signal for each specific mode is applied after the dc bias is applied note 2 : total on / off time includes from 10 % of control switching to 90 % of rf power note 3 : listed values on diagram are typical . the maximum is 0 . 5 us for each mode lna _ en rx is low during tx rf signal on time is 0 . 5 us max . set rf input to required level . range is set per the data sheet
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 9 r ffm8511 pr eliminary evaluation board schematic
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 9 r ffm8511 pr eliminary pin out pdet pa_en gnd vcc gnd lna_en vcc gnd c_rx tx 15 3 1 vmode vcc rx 12 ant 2 13 11 10 9 8 7 6 5 4 14 16 gnd gnd package drawing
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 9 r ffm8511 pr eliminary pcb patterns notes: 1. thermal vias for center slug ?c? should be incorporated into the pcb design. the number and size of thermal vias will depend on the applicati on, power, dissipation and electrical requirements. example of the number and size of vias can be found on the rfmd evaluation boa rd layout (gerber files are available upon request)
draft draft draft draft draft draft draft draft rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds140711 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 9 r ffm8511 pr eliminary p in names and descriptions pin name description 1 gnd this pin is not connected internally and can be left floating or connected to ground. 2 rx rf output port for the 802.11a/n/ac lna. this port is matched to 50? and dc blocked internally. 3 gnd this pin is not connected internally and can be left floating or connected to ground. 4 vcc supply voltage for the lna and pa regulator. see applications schematic for biasing and bypassing components. 5 pdet power detector voltage for the tx path. may need external series r/shunt c to adjust voltage level and to filter rf noise. 6 pa_en control voltage for the pa and tx switch. see truth table for proper settings. 7 gnd this pin is not connected internally and can be left floating or connected to ground. 8 tx rf input port for the 802.11a/n/ac pa. input is matched to 50? and dc blocked internally 9 v mode high/low p ower mode control signal. v mode can be low or floating for nominal conditions (high power mode). applying 2.8v or greater to this pin enables low power mode. 10 vcc supply voltage for the first and second stage of the pa. see applications schematic for biasing and bypassing component s. 11 vcc supply voltage for the final stage of the pa. see applications schematic for biasing and bypassing components. 12 gnd this pin is not connected internally and can be left floating or connected to ground. 13 ant rf bidirectional antenna port matched to 50?. an external dc block is required 14 gnd this pin is not connected internally and can be left floating or connected to ground. 15 c_rx receive switch control pin. see switch truth table for proper level. 16 lna_en control voltage for the lna. when this pin is set to a low logic state, the bypass mode is enabled. pkg base gnd ground connection. the backside of the package should be connected to the ground plane through a short path, i.e., pcb vias under the device are recommended.
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