1 CGHV1F025S 25 w, dc - 15 ghz, 40v, gan hemt crees CGHV1F025S is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities. the device can be deployed for l, s, c, x and ku-band amplifer applications. the datasheet specifcations are based on a x-band (8.9 - 9.6 ghz) amplifer. the CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-fat-no-lead (dfn) package. under reduced power, the transistor can operate below 40v to as low as 20v v dd, maintaining high gain and effciency. package type: 3x4 dfn pn: CGHV1F025S rev 0.2 C march 2015 features ? up to 15 ghz operation ? 25 w typical output power ? 11 db gain at 9.4 ghz ? application circuit for 8.9 - 9.6 ghz typical performance 8.9 - 9.6 ghz (t c = 25?c) , 40 v parameter 8.9 ghz 9.2 ghz 9.4 ghz 9.6 ghz units output power @ p in = 37 dbm 24 29 27 25 w drain effciency @ p in = 37 dbm 43.5 48.5 48 46 % gain @ p in = 0 dbm 10.7 11.6 11.3 11.1 db note: measured in the CGHV1F025S-tb1 application circuit. pulsed 100 s 10% duty. preliminary subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes drain-source voltage v dss 100 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 4.8 ma 25?c maximum drain current 1 i dmax 2 a 25?c soldering temperature 2 t s 245 ?c case operating temperature 3,4 t c -40, +150 ?c thermal resistance, junction to case 5 r jc 3.4 ?c/w 85?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 simulated at p diss = 2.4 w 4 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the package. the pcb will add additional thermal resistance. 5 pulsed (100 s, 10% duty). rth for crees reference design using a 10 mil rogers 5880 pcb with 31 (?13 mil) vias would be 3.6 c/w. for cw operation, the rth numbers increase to 5c/w for just the device, and 7.3 c/w including the board. electrical characteristics (t c = 25?c) - 40 v typical characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 4.8 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 40 v, i d = 240 ma saturated drain current 2 i ds 3.8 -4.3 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v (br)dss 100 C C v dc v gs = -8 v, i d = 4.8 ma rf characteristics 3 (t c = 25 ? c, f 0 = 6.0 ghz unless otherwise noted) gain g C 16 - db v dd = 40 v, i dq = 150 ma, p in = 0 dbm output power 4 p out C 29 C w v dd = 40 v, i dq = 150 ma, p in = 34 dbm drain effciency 4 C 55 - % v dd = 40 v, i dq = 150 ma, p in = 34 dbm output mismatch stress 4 vswr - 10 : 1 - y no damage at all phase angles, v dd = 40 v, i dq = 150 ma, p out = 29 w dynamic characteristics input capacitance 5 c gs C 5.9 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz output capacitance 5 c ds C 2 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.21 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging 2 scaled from pcm data 3 measured in CGHV1F025S-tb 4 pulsed 100 s, 10% duty cycle 5 includes package CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 electrical characteristics when tested in CGHV1F025S-tb1 characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 8.9 - 9.6 ghz unless otherwise noted) gain g C 11.6 - db v dd = 40 v, i dq = 150 ma, p in = 0 dbm output power 2 p out C 29 C w v dd = 40 v, i dq = 150 ma, p in = 37 dbm drain effciency 2 C 48.5 - % v dd = 40 v, i dq = 150 ma, p in = 37 dbm output mismatch stress 2 vswr C 10 : 1 C y v ds = 40 v, v gs = -8 v, p out = 25 w notes: 1 measured in CGHV1F025S-tb1 application circuit 2 pulsed 100 s, 10% duty cycle typical performance - CGHV1F025S-tb1 figure 1. - typical small signal response of CGHV1F025S-tb1 application circuit v dd = 40 v, i dq = 150 ma -4 -2 0 2 4 6 8 10 12 14 16 g a i n , r e tu r n l o s s (d b ) small signal s-parameters vdd = 40 v, idq = 150 ma, tcase = 25 c -20 -18 -16 -14 -12 -10 -8 -6 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 10.2 10.4 10.6 g a i n , r e tu r n l o s s (d b ) frequency (ghz) s21 s11 s22 CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance in application circuit CGHV1F025S-tb1 figure 2. - typical large signal response v dd = 40 v, i dq = 150 ma, p in = 37 dbm tcase = 25c, pulse width = 100 s, duty cycle = 10 % figure 3. - g max and k-factor vs frequency v dd = 40 v, i dq = 150 ma, tcase = 25c effciency gain offset 10 12 14 16 18 20 40 42 44 46 48 50 gai n ( d b ) ou t p u t po w er ( d b m) , d r ai n ef f i ci en cy ( % ) CGHV1F025S (25 w, dc - 18.0 ghz) output power, gain and efficiency vs frequency v dd = 40 v, i dq = 150 ma, p in = 37 dbm t case = 25 c , pu l s e w i d t h = 100 s, d u t y c y cl e = 10 % 0 2 4 6 8 30 32 34 36 38 8.8 8.9 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 ou t p u t po w er ( d b m) , d r ai n ef f i ci en cy ( % ) frequency (ghz) drain efficiency output power power gain output power drain effciency power gain 1.5 2 2.5 3 3.5 20 25 30 35 40 k - f act o r gm ax ( d b ) maximum avaliable gain & k-factor CGHV1F025S vdd = 40 v, idq = 150 ma, tcase = 25 c gmax k-factor 0 0.5 1 5 10 15 0 2 4 6 8 10 12 14 16 frequency (ghz) CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 CGHV1F025S-tb1 application circuit bill of materials designator description qty r1 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 r2 res, 10, ohm, +1/-1%, 1/16 w, 0603 1 c1, c2 cap, 1pf, 0.1 pf, 0603, atc 2 c3, c4 cap, 1.8pf, 0.1 pf, 0603, atc 2 c9, c10 cap, 0.6pf, 0.1 pf, 0603, atc 2 c5, c11 cap, 10 pf, 5%, 0603, atc 1 c6, c12 cap, 470 pf, 5%, 100 v, 0603, x 2 c7, c13 cap, 33000 pf, 0805, 100v, x7r 2 c14 cap, 1.0 uf, 100v, 10%, x7r, 1210 1 c8 cap, 10 uf, 16v tantalum 1 c15 cap, 33uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor CGHV1F025S 1 w1 cable, 18 awg, 4.2 1 rogers 5880 pcb 10 mils 1 electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm 2 (125 v to 250 v) jedec jesd22 c101-c CGHV1F025S-tb1 application circuit CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 CGHV1F025S-tb1 application circuit schematic CGHV1F025S-tb1 application circuit outline CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 product dimensions CGHV1F025S (package 3 x 4 dfn) pin input/output 1 gnd 2 rf in 3 rf in 4 rf in 5 rf in 6 gnd 7 gnd 8 rf out 9 rf out 10 rf out 11 rf out 12 gnd CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 part number system parameter value units upper frequency 1 15.0 ghz power output 25 w package surface mount - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage CGHV1F025S CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.313.5639 CGHV1F025S rev 0.2 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
|
