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  rq3l050gn nch 60v 12a middle power mosfet datasheet ll outline v dss 60v hsmt8 r ds(on) (max.) 61m i d 12a p d 14.8w ll inner circuit ll features 1) low on - resistance. 2) small surface mount package. 3) pb-free lead plating ; rohs compliant ll packaging specifications type packing embossed tape reel size (mm) 330 ll application tape width (mm) 12 switching basic ordering unit (pcs) 3000 taping code tb marking l050gn ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 60 v continuous drain current t c = 25c i d *1 12 a t a = 25c i d 5 a pulsed drain current i d,pulse *2 20 a gate - source voltage v gss 20 v avalanche energy, single pulse e as *3 3.9 mj avalanche current i as *3 5.0 a power dissipation p d *1 14.8 w p d *4 2.0 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - - 62.5 /w thermal resistance, junction - case r thjc *1 - - 8.4 /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 60 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 60 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 60v, v gs = 0v - - 10 a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 10 a gate threshold voltage v gs(th) v ds = v gs , i d = 25a 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -5.6 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *5 v gs = 10v, i d = 5a - 43 61 m v gs = 6.0v, i d = 5a - 47 66 v gs = 4.5v, i d = 5a - 61 86 gate input resistance r g f=1mhz, open drain - 1.9 - forward transfer admittance |y fs | *5 v ds = 5v, i d = 5a 3.5 - - s *1tc=25 *2 pw 10s, duty cycle 1% *3 l ? 0.2mh, v dd = 30v, r g = 25, starting t ch = 25 fig.3-1,3-2 *4 mounted on a ceramic boad (30300.8mm) limited only by maximum chamel temperaturer allowed . *5 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 300 - pf output capacitance c oss v ds = 30v - 52 - reverse transfer capacitance c rss f = 1mhz - 18 - turn - on delay time t d(on) *5 v dd ? 30v,v gs = 10v - 7.4 - ns rise time t r *5 i d = 2.5a - 4.9 - turn - off delay time t d(off) *5 r l ? 12 - 17.4 - fall time t f *5 r g = 10 - 3.7 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *5 v dd ? 30v i d = 5a v gs = 10v - 5.3 - nc v gs = 4.5v - 2.8 - gate - source charge q gs *5 - 1.1 - gate - drain charge q gd *5 - 1.0 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1.67 a body diode pulse current i sp *2 - - 20 a forward voltage v sd *5 v gs = 0v, i s = 1.67a - - 1.2 v reverse recovery time t rr *5 i s = 5a, v gs =0v di/dt = 100a/s - 26 - ns reverse recovery charge q rr *5 - 21 - nc www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 transconductance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic curves fig. 1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) fig.17 static drain - source on - state resistance vs. drain current( ) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll electrical characteristic curves fig. 1 8 typical capacitance vs. drain - source voltage fig.19 switching characteristics fig.20 dynamic input characteristics fig.21 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll measurement circuits fig. 1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalan che waveform ll notice this product might cause chip aging and breakdown u nder the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150318 - rev.002 downloaded from: http:///
rq3l050gn datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150318 - rev.002 downloaded from: http:///
notice-p ga -e rev.003 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufactured for application in ordinary electronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). if you intend to use our products in devices requiring extremely h igh reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecraft, nuclear powe r controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property ( specific applications ), please consult with the rohm sales representative in adv ance. unless otherwise agreed in writing by rohm in advance, rohm s hall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arisin g from the use of any rohm s products for specific applications. (note1) medical equipment classification of the specific appl ications japan usa eu china class  class  class  b class  class ? class  2. rohm designs and manufactures its products subject to stri ct quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequ ate safety measures including but not limited to fail-safe desig n against the physical injury, damage to any property, whic h a failure or malfunction of our products may cause. the followi ng are examples of safety measures: [a] installation of protection circuits or other protective devic es to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified be low. accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from th e use of any rohms products under any special or extraordinary environments or conditions. if yo u intend to use our products under any special or extraordinary environments or conditions (as exemplified belo w), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be n ecessary: [a] use of our products in any types of liquid, including water, oils, chemicals, and organi c solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products are e xposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed t o static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing component s, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subject to radiation-proof design. 5. please verify and confirm characteristics of the final or mou nted products in using the products. 6 . in particular, if a transient load (a large amount of load appl ied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mou nting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating u nder steady-state loading condition may negatively affec t product performance and reliability. 7 . de -rate power dissipation depending on ambient temperature. wh en used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range desc ribed in the product specification. 9 . rohm shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc .) flux is used, the residue of flux may negatively affect prod uct performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method mus t be used on a through hole mount products. i f the flow soldering method is preferred on a surface-mount p roducts , please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
notice-p ga -e rev.003 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, p lease allow a sufficient margin considering variations o f the characteristics of the products and external components, inc luding transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and a ssociated data and information contained in this docum ent are presented only as guidance for products use. therefore, i n case you use such information, you are solely responsible for it and you must exercise your own independ ent verification and judgment in the use of such information contained in this document. rohm shall not be in any way respon sible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such informat ion. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take pr oper caution in your manufacturing process and storage so t hat voltage exceeding the products maximum rating will not be applied to products. please take special care under dry co ndition (e.g. grounding of human body / equipment / solder iro n, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate i f the products are stored in the places where: [a] the products are exposed to sea winds or corrosive gases, in cluding cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderabil ity of products out of recommended storage time period may be degraded. it is strongly recommended to confirm so lderability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indi cated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a c arton. 4. use products within the specified time after opening a humi dity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage tim e period. precaution for product label a two-dimensional barcode printed on rohm products label is f or rohm s internal use only. precaution for disposition when disposing products please dispose them properly usi ng an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to appl ication example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, a ctions or demands arising from the combination of the products with other articles such as components, circuits, systems or ex ternal equipment (including software). 3. no license, expressly or implied, is granted hereby under any inte llectual property rights or other rights of rohm or any third parties with respect to the products or the information contai ned in this document. provided, however, that rohm will not assert it s intellectual property rights or other rights against you or you r customers to the extent necessary to manufacture or sell products containing the products, subject to th e terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any way whatsoever the pr oducts and the related technical information contained in the products or this document for any military purposes, includi ng but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///


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Price & Availability of RQ3L050GNTB
Newark

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RQ3L050GNTB
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ROHM Semiconductor Mosfet, N-Ch, 60V, 12A, Hsmt-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.061Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipationrohs Compliant: Yes |Rohm RQ3L050GNTB 1000: USD0.354
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DigiKey

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Avnet Americas

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RQ3L050GNTB
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ROHM Semiconductor Trans MOSFET N-CH 60V ±13A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3L050GNTB) 24000: USD0.23316
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Mouser Electronics

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Future Electronics

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RQ3L050GNTB
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CoreStaff Co Ltd

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