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| www.irf.com 1 02/29/12 IRFTS9342pbf hexfet power mosfet notes through are on page 2 applications battery operated dc motor inverter mosfet system/load switch features and benefits top view 1 2 d g a d dd s 3 4 5 6 tsop-6 v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 40 m r ds(on) max (@v gs = -4.5v) 66 m q g typ 12 nc i d (@t a = 25c) -5.8 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. -5.8 -46 20 -30 -4.6 -55 to + 150 2.0 0.02 1.3 note form quantity IRFTS9342trpbf tsop-6 tape and reel 3000 orderable part number package type standard pack features benefits industry-standard tsop-6 package results in multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ? environmentally friendlier msl1, consumer qualification increased reliability downloaded from: http:/// 2 www.irf.com g ds repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 62.5 c/w static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 19 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 32 40 CCC 53 66 v gs(th) gate threshold voltage -1.3 CCC -2.4 v ? v gs(th) gate threshold voltage coefficient CCC -5.5 CCC mv/c i dss drain-to-source leakage current CCC CCC -1.0 CCC CCC -150 i gss gate-to-source forward leakage CCC CCC -100 gate-to-source reverse leakage CCC CCC 100 gfs forward transconductance 6.8 CCC CCC s q g total gate charge CCC 12 CCC q gs gate-to-source charge CCC 1.8 CCC q gd gate-to-drain charge CCC 3.1 CCC r g gate resistance CCC 17 CCC t d(on) turn-on delay time CCC 4.6 CCC t r rise time CCC 13 CCC t d(off) turn-off delay time CCC 45 CCC t f fall time CCC 28 CCC c iss input capacitance CCC 595 CCC c oss output capacitance CCC 133 CCC c rss reverse transfer capacitance CCC 85 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC -1.2 v t rr reverse recovery time CCC 20 30 ns q rr reverse recovery charge CCC 11 17 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = -25 a v gs = -4.5v, i d = -4.6a m v dd = -15v, v gs = -10v v ds = -15v r g = 6.8 v ds = -10v, i d = -4.6a v ds = -24v, v gs = 0v, t j = 125c a i d = -4.6a i d = -4.6a v gs = 0v v ds = -25v v ds = -24v, v gs = 0v t j = 25c, i f = -4.6a, v dd = -24v di/dt = 100a/ s t j = 25c, i s = -4.6a, v gs = 0v showing the integral reverse p-n junction diode. conditions ? = 1.0khz conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -5.8a CCC CCC -46 CCC CCC -2.0 mosfet symbol na ns a pf nc v gs = -10v v gs = -20v v gs = 20v downloaded from: http:/// www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -5.8a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810121416 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v v ds = -6.0v i d = -4.6a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.5v -3.0v bottom -2.8v 60 s pulse width tj = 25c -2.8v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.8v 60 s pulse width tj = 150c vgs top -10v -7.0v -5.0v -4.5v -4.0v -3.5v -3.0v bottom -2.8v 1 2 3 4 5 6 7 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width downloaded from: http:/// 4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = -25 a i d = -250 a i d = -1.0ma id = -10ma i d = -1.0a downloaded from: http:/// www.irf.com 5 fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 14. maximum avalanche energy vs. drain current fig 15 typical power vs. time p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ? ? ? ? ? ! "#"" ? $ % % ? "#"" & # + - + + + - - - fig 16. for p-channel hexfet power mosfets 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -5.8a t j = 25c t j = 125c 0 10 20 30 40 50 -i d , drain current (a) 20 40 60 80 100 120 140 160 180 200 220 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -4.5v vgs = -10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -0.91a -1.4a bottom -4.6a 0.0001 0.001 0.01 0.10 1 10 time (sec) 0 10 20 30 40 50 60 70 80 90 100 p o w e r ( w ) downloaded from: http:/// 6 www.irf.com fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v ' ( 1 ) $ 0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f downloaded from: http:/// www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ tsop-6 package outline tsop-6 part marking information ww = (27-52) if preceded by a let t er ch k j ef g d 0 2010 year b a y 2007 2008 2009 2006 2005 2003 2004 2001 2002 57 9 8 6 34 12 c 29 z 52 5051 xy 30 d x 24 w wor k week 27 28 b a 26 25 z y 0304 0102 cd ab date code marking instructions ww = (1-26) if preceded by last digit of calendar year year y w week wor k 2020 20172018 2019 2016 2015 20132014 20112012 2010 2007 2008 2009 2006 2005 2003 2004 2001 2002 2020 20172018 2019 2016 2015 20132014 20112012 code top part number w = we e k y = year lot f = irf5801 (as shown here) indicates lead-free. note: a l ine above the wor k week a = s i3443dv b = irf 5800 g = irf 5803 d = ir f 5851 e = irf5852 i = irf 5805 c = i r f 58 50 n = irf 5802 k = irf 5810 part number code reference: j = irf 5806 h = irf 5804 o = irl t s 6342t rpb f p = irf t s 8342t rpbf s = not applicable r = irf t s 9342t rpbf t = irlt s 2242t rpb f downloaded from: http:/// 8 www.irf.com tsop-6 tape and reel information ? qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 data and specifications subject to change without notice. 8mm feed direction 4mm notes : 1. outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ms l 1 (per i p c/j e de c j -s t d-020d ??? ) rohs compliant yes tsop-6 qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines ) downloaded from: http:/// |
Price & Availability of IRFTS9342
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